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| an AMP company CW Power Transistor, 30 - 400 MHz Features l l l l l l l 85W PHOI 04-85 v2.00 NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 85 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Proven in Thousands of ARC-182 Airborne Radios .a20 :23.83) c' Absolute Maximum Ratings at 25C I Parameter Collector-Emitter Voltage Emitter-Base Voltage I Collector Current ) Symbol 1 Rating ( Units 1 V,,, VES0 65 4.0 ( IO 194 200 -40 to +125 I V V A w "C "C I COATING -, (Peak) I lc PO TJ Power Dissipation JunctionTemperature StorageTemperature Thermal Resistance I T ST0 8.K I 0.9 I "WJv I LlNLiSS 3TH;RWISi NJTEII, TOLERANCES ARE (MILLIPIETERS +,,3nH) Electrical Characteristics I Parameter at 25C ( Symbol 1 Min 1 pax 1 Units I lest Conditions ( Collector-Emitter Breakdown Voltage I Base-Emitter Breakdown Voltage Collector-Emitter Leakage Current DC Forward Current Gain 1 Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance 1 1 BV,,, BVm `CES I 65 I I 4.0 I 20 I - 1 ) v v mA W dB % dB I I,=10 mA, v,,=o.o v I I,=IO mA, I,=O.OA v,,=30 v V-,=5.0 V, 1,=2.0 A ) V,,=27 V, I,,=50 mA, Pod85 W, F=400 MHZ I I I 4 80 hcc I PIN I - I GP % 16 ) - 7.3 45 9 I V,,=27 V, I,,=50 mA, PO,,,=85W. F=400 MHz V,,=27 V, I,,=50 mA, Pob,=85 W, F=400 MHz !I,,=27 V, I,,=50 mA, P,~85 ) V,,=27V, 1,,=5omA, ~~~85 W, F=400 MHz w, F=~OOMHZ RL I VBWH-T I 3:l I - Specifications Subjectto ChangeWithoutNotice. |
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