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| www..com Silan Semiconductors EL LAMP DRIVER IC DESCRIPTION The SC6802 is a poly gate CMOS integrated circuit which is designed to drive an Electoluminescence Lamp (EL) to light. It supplies three pins for trigger input: one is active at low (ALM) and other two are active at high (TG & FLSH). 3 seconds display delay function is implemented by internal divider. Only ALM and TG will 3 seconds delay but FLSH not. The switching and EL driving frequency is decided by an internal RC oscillator. The driving capability for IND output and frequency for EL output are different options, the detail information shown in the OPTION LIST. TG IND EL SC6802 TES T1 TES T2 FL SH ALM VDD VSS Chip Topography The SC6802 can be widely used in the back light of digital watch, analogy watch, calculator etc. FEATURES * Single 3V or 1.5V battery operation * DC to AC conversion * Built-in RC oscillator * Built-in delay function * Three independent trigger inputs: -- ALM (active Low) makes EL display for 3 seconds delay; -- TG (active High) makes EL display for 3 seconds delay; -- FLSH (active high) makes EL flash companied with the pulse from FLSH without any delay (See Timing Diagram) * Economical solution for EL display * CMOS process and low power consumption * No external component needed for delay function * Minimum external components application OPTION LIST OPTION SC6802-1 SC6802-2 SC6802-3 IND Output Current LOH1(mA) Min. Typ. Max. 0.25 1.0 0.2 0.5 1.5 0.4 1.0 2.5 0.8 Oscillator Frequency FOSC(kHz) Min. Typ. Max. 170 400 400 240 500 500 310 670 670 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic Supply Voltage Input Voltage Operating Temperature Storage Temperature Symbol VDD - VSS VIN Topr Tstg Test Conditions ----- Value -0.3 ~ 5.0 VSS -0.3V ~ VDD+0.3V -10 ~ +70 -55 ~ +125 Unit V V C C HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 2000.12.31 1 www..com Silan Semiconductors PAD ASSIGNMENT IND EL VDD TG SC6802 TEST1 TEST2 SC6802 FLSH ALM VSS Chip size: 1.11x0.85(mm)2 Note: The IC substrate should be connected to VDD in the PCB layout artwork. ELECTRICAL CHARACTERISTICS (Ta=25C, VSS=0V, VDD=3.0V; Unless otherwise specified) Parameter Operating Voltage Stand-by Current IND Output Source Current * EL Output Source Current IND Output Sink Current EL Output Sink Current Oscillator Start Voltage Oscillator Frequency * Symbol VDD IDD IOH1 IOH2 IOL1 IOL2 VOSC FOSC -- Test conditions All input and output are opened. VOH = 0.8V VOH = 0.8V VOL = 0.8V VOL = 0.8V Within 2 sec VDD = 3.0V Min 1.3 -1.0 0.2 10 0.5 1.3 400 Typ 3.0 0.1 1.5 0.6 20 2 -500 Max 4.5 1 2.5 ----670 Unit V A mA mA mA mA V KHz * The parameters IOH and FOSC in the above table refer to option SC6802-2; Others can be found in the OPTION LIST. PAD DESCRIPTION Pad No. 1 2 3 4 5 6 7 8 9 Symbol Vss ALM FLSH TEST2 TEST1 IND EL VDD TG I/O -I I --O O -I Positive power supply Negative power supply Description Trigger input pin (active low) Trigger input pin (active high) Test pin Test pin DC to AC converter output Trigger input pin (active high) HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 2000.12.31 2 www..com Silan Semiconductors TIMING DIAGRAM VDD SC6802 FLSH TG ALM 3s EL 1ms 1ms 3s 3s IND 32s 32s 2s APPLICATION CIRCUIT SC6802 TEST1 K3 2N5551 2N5551 IND EL VDD TG TEST2 FLSH ALM K2 VSS D1 10k IN4148 3mh 21 0.01f-0.1f 3V/ 1.5V C1 EL DISPLAY K1 Note: 1. Substrate is connected to VDD. 2. The wires connected to TG and ALM cannot across the line inside the black dote line box. Furthermore, these wires should be separated from the lines inside the black dote line box by Vss or VDD. 3. The capacitor C2 can be connected to Vss or VDD. 4. During the watch application, the two wires connected to crystal are better to be surrounded by Vss or VDD, and they are the farer the better away from the wire connected to EL. 5. The items 2,3,4 are very important for PCB layout. HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 2000.12.31 3 0.01f-0.1f C2 www..com Silan Semiconductors CHIP TOPOGRAPHY SC6802 TEST1 IND EL TEST2 FLSH VDD ALM TG VSS Chip Size: 1.11mm x 0.85mm PAD COORDINATES (Unit: m) PAD Name VDD TG VSS ALM FLSH X -470 -470 460 460 460 Y -35 300 -325 160 5 PAD Name TEST2 TEST1 IND EL X 460 460 -470 -470 Y 170 340 340 160 Note: The original point of the coordinate is the die center. HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD Rev: 1.0 2000.12.31 4 |
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