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| www..com FJPF9020 FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors * High Collector-Base Breakdown Voltage : BVCBO = -550V * High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) * Industrial Use 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value - 550 - 550 -6 -2 -4 15 150 - 55 ~ 150 Units V V V A A W C C R1 R2 E B Equivalent Circuit C R1 600 R2 150 Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = - 1A, IB = - 20mA IC = - 1A, IB = - 20mA 400 -10 550 -1.0 -1.5 Min. - 550 - 550 -6 -100 -20 700 - 1.5 - 2.0 V V Typ. Max. Units V V V A mA (c)2002 Fairchild Semiconductor Corporation Rev. A, June 2002 www..com FJPF9020 Typical Characteristics -3.0 1000 VCE = - 4V -2.5 IB = - 40mA 125 C o IC [A], COLLECTOR CURRENT HFE, DC CURRENT GAIN -2.0 IB = - 15mA 75 C - 25 C 100 o o 25 C o -1.5 IB = - 3mA -1.0 IB = - 1.5mA -0.5 -0.0 -0 -1 -2 -3 -4 -5 10 - 0.03 -0.1 -1 -4 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic Figure 2. DC current Gain -4 -3 IC / IB = 50 VCE(sat) [V], SATURATION VOLTAGE -3 VCE(sat) [V], SATURATION VOLTAGE -2 -2 -1 75 C o 125 C o -1 IC = - 2A IC = - 1A 25 C -0 - 0.2 o - 25 C o -0 -1E-3 -0.01 -0.1 - 0.4 -1 -4 IB [A], BASE CURRENT IC [A], COLLECTOR CURRENT Figure 3. VCE(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage -2.0 1000 VCE = - 4V f = 1MHz -1.5 -1.0 Cob [pF], OUTPUT CAPACITANCE -2.5 -3.0 IC [A], COLLECTOR CURRENT 100 -0.5 125 C 75 C o o 25 C - 25 C o o -0.0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -0 -5 -10 -15 -20 -25 VBE [V], BASE-EMITTER VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Output Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. A, June 2002 www..com FJPF9020 Typical Characteristics (Continued) -10 20 IC (Pulse) IC [A], COLLECTOR CURRENT -1 IC (DC) 100ms 10ms PC [W], COLLECTOR POWER DISSIPATION 15 -0.1 10 -0.01 5 Single Pulse Ta=25 C -1E-3 -1 -10 -100 -1000 o 0 0 25 50 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC [ C], CASE TEMPERATURE o Figure 7. Forward Bias Safe Operating Area Figure 8. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. A, June 2002 www..com FJPF9020 Package Demensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A, June 2002 15.87 0.20 www..com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet seriesTM FAST(R) DISCLAIMER FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. H7 |
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