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PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
Rev. 01 -- 13 August 2009 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I I I I I Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count AEC-Q101 qualified
1.3 Applications
I I I I Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio single pulse; tp 1 ms IC = -1.5 A; IB = -100 mA open base
[1]
Conditions open base
Min -
Typ 110
Max -60 -1.5 -3 175
Unit V A A m
TR1; PNP low VCEsat transistor
TR2; NPN resistor-equipped transistor VCEO IO R1 R2/R1
[1]
3.3 0.8
4.7 1
50 100 6.1 1.2
V mA k
Pulse test: tp 300 s; 0.02.
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Description base TR1 input (base) TR2 output (collector) TR2
R2
Simplified outline
6 5 4
Graphic symbol
6 5 4
GND (emitter) TR2 collector TR1 emitter TR1
1
2
3
TR1
TR2 R1
1
2
3
006aab506
3. Ordering information
Table 3. Ordering information Package Name PBLS6022D SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking codes Marking code KF Type number PBLS6022D
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
2 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation single pulse; tp 1 ms Tamb 25 C
[1] [2] [3]
Conditions open emitter open base open collector single pulse; tp 1 ms
Min -
Max -60 -60 -5 -1.5 -3 -300 -1 370 480 630 50 50 10 +30 -10 100 100 200
Unit V V V A A mA A mW mW mW V V V V V mA mA mW
TR1; PNP low VCEsat transistor
TR2; NPN resistor-equipped transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Per device Ptot total power dissipation Tamb 25 C
[1] [2] [3]
open emitter open base open collector
output current peak collector current total power dissipation single pulse; tp 1 ms Tamb 25 C
[1][2] [3]
-
-55 -65
480 590 760 150 +150 +150
mW mW mW C C C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
3 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
1000 Ptot (mW) 800
(1)
006aab507
(2)
600
400
(3)
200
0 -75
-25
25
75
125 175 Tamb (C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves
6. Thermal characteristics
Table 6. Symbol Per device Rth(j-a) thermal resistance from junction to ambient in free air
[1] [2] [3]
Thermal characteristics Parameter Conditions Min Typ Max 260 211 165 100 Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
4 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
103 Zth(j-a) (K/W) 102 =1 0.50 0.20 0.10 0.05 10 0.01 0 0.02
006aab508
0.75 0.33
1
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab509
103 Zth(j-a) (K/W) 102 =1 0.50 0.20 0.10 10 0.05 0.02 0.01 1 0 0.75 0.33
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
5 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
103 Zth(j-a) (K/W) 102
006aab510
=1 0.75 0.50 0.20 0.10 0.33
10
0.05 0.02 0.01
1
0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 4.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = -60 V; IE = 0 A VCB = -60 V; IE = 0 A; Tj = 150 C VCE = -48 V; VBE = 0 A VEB = -5 V; IC = 0 A VCE = -2 V; IC = -100 mA VCE = -2 V; IC = -500 mA VCE = -2 V; IC = -1 A VCE = -2 V; IC = -1.5 A VCEsat collector-emitter saturation voltage IC = -0.5 A; IB = -50 mA IC = -1 A; IB = -50 mA IC = -1 A; IB = -100 mA IC = -1.5 A; IB = -100 mA RCEsat VBEsat collector-emitter saturation resistance base-emitter saturation voltage IC = -1 A; IB = -100 mA IC = -1.5 A; IB = -100 mA IC = -0.5 A; IB = -50 mA IC = -1.5 A; IB = -100 mA
[1] [1] [1] [1] [1] [1] [1] [1] [1] [1] [1]
Min 180 150 140 120 -
Typ 285 255 210 185 -65 -130 -110 -165 110 110
Max -100 -50 -100 -100 -100 -200 -170 -260 170 175
Unit nA A nA nA
TR1; PNP low VCEsat transistor
ICES IEBO hFE
mV mV mV mV m m V V
-0.85 -1 -0.93 -1.1
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
6 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
Table 7. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol VBEon td tr ton ts tf toff fT Cc Parameter base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance IC = -50 mA; VCE = -10 V; f = 100 MHz VCB = -10 V; IE = ie = 0 A; f = 1 MHz VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 10 mA IC = 10 mA; IB = 0.5 mA VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 20 mA Conditions VCE = -10 V; IC = -1 A VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA
[1]
Min -
Typ
Max
Unit V ns ns ns ns ns ns MHz pF
-0.75 -1.1 17 38 55 350 65 415 150 30 -
TR2; NPN resistor-equipped transistor ICBO ICEO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance
Pulse test: tp 300 s; 0.02.
30 2.5 3.3 0.8
1.1 1.9 4.7 1 -
100 1 50 900 150 0.5 6.1 1.2 2.5
nA A A A
IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc
mV V V k pF
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
-
[1]
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
7 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
600 hFE
(1)
006aab523
-3 IC (A) -2
006aab524
IB (mA) = -30 -24 -18 -12
-27 -21 -15
400
(2)
-9 -6
200
(3)
-1 -3
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
0 0.0
-0.5
-1.0
-1.5 VCE (V)
-2.0
VCE = -2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 5.
TR1 (PNP): DC current gain as a function of collector current; typical values
006aab525
Fig 6.
TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values
006aab526
-1.2 VBE (V) -1.0
(1)
-1.2 VBEsat (V) -1.0
(1)
-0.8
(2)
-0.8
(2)
-0.6
(3)
-0.6
(3)
-0.4
-0.4
-0.2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-0.2 -10-1
-1
-10
-102
-103 -104 IC (mA)
VCE = -2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 7.
TR1 (PNP): Base-emitter voltage as a function of collector current; typical values
Fig 8.
TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
8 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
-1
006aab527
-1
006aab528
VCEsat (V)
VCEsat (V)
-10-1
(1) (2)
-10-1
(1)
(2)
(3)
(3)
-10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 9.
TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values
006aab529
Fig 10. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values
103 RCEsat () 102
006aab530
103 RCEsat () 102
10
10
(1)
1
(2) (3)
1
(1) (2)
10-1
10-1
(3)
10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 11. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values
Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
9 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
103 hFE
006aaa030
(1) (2) (3)
102
10
1 10-1
1
10 IC (mA)
102
VCE = 5 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -40 C
Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values
10
006aaa032
10
006aaa033
VI(on) (V)
(1)
VI(off) (V)
(1)
1
(2) (3)
1
(2) (3)
10-1 10-1
1
10 IC (mA)
102
10-1 10-2
10-1
1 IC (mA)
10
VCE = 0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C
VCE = 5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 14. TR2 (NPN): On-state input voltage as a function of collector current; typical values
Fig 15. TR2 (NPN): Off-state input voltage as a function of collector current; typical values
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
10 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
1
006aaa031
1
006aab520
VCEsat (V)
VCEsat (V)
10-1
(1) (2) (3)
10-2 1 10 IC (mA)
10-1 102 10 IC (mA)
102
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C
IC/IB = 50; Tamb = 25 C
Fig 16. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
Fig 17. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
11 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
8. Test information
-I B
90 % input pulse (idealized waveform)
-I Bon (100 %)
10 %
-I Boff
-I C
90 %
output pulse (idealized waveform)
-I C (100 %)
10 % t td t on tr ts t off tf
006aaa266
Fig 18. TR1: BISS transistor switching time definition
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mgd624
VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA
Fig 19. TR1: Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
12 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
9. Package outline
3.1 2.7 6 5 4 0.6 0.2 1.1 0.9
3.0 2.5
1.7 1.3
pin 1 index
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 20. Package outline SOT457 (SC-74)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBLS6022D Package Description SOT457 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3]
Packing quantity 3000 -115 -125 10000 -135 -165
For further information and the availability of packing methods, see Section 13. T1: normal taping T2: reverse taping
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
13 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
11. Revision history
Table 9. Revision history Release date 20090813 Data sheet status Product data sheet Change notice Supersedes Document ID PBLS6022D_1
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
14 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBLS6022D_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 13 August 2009
15 of 16
NXP Semiconductors
PBLS6022D
60 V, 1.5 A PNP BISS loadswitch
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 Quality information . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Packing information. . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 August 2009 Document identifier: PBLS6022D_1

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