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HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications www..com at high frequencies where low conduction losses operating are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
Features
* 100kHz Operation At 390V, 20A * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . . 58ns at TJ = 125oC * Low Conduction Loss
Symbol
C
G
Ordering Information
PART NUMBER HGT1N30N60A4D PACKAGE SOT-227 BRAND 30N60A4D
E
Packaging
JEDEC STYLE SOT-227B
GATE EMITTER
NOTE: When ordering, use the entire part number.
TAB (ISOLATED)
COLLECTOR
EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified 600 96 39 240 20 30 150A at 600V 255 2.0 2500 -55 to 150 1.5 1.7 UNITS V A A A V V W W/oC V oC N-m N-m
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min) . . . . . . . . . . . . . . . . . . . . . . . .VISOL Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG www..com Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF VEC IEC = 30A IGBT and Diode at TJ = 125oC, ICE = 30A, VCE = 390V, VGE = 15V, RG = 3, L = 200H, Test Circuit (Figure 24) TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V IC = 30A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 4.5 150 TYP 1.8 1.6 5.2 8.5 225 300 25 12 150 38 280 600 240 24 11 180 58 280 1000 450 2.2 MAX 250 2.8 2.7 2.0 7.0 250 270 360 350 200 70 1200 750 2.5 UNITS V A mA V V V nA A V nC nC ns ns ns ns J J J ns ns ns ns J J J V
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
IC = 250A, VCE = 600V VGE = 20V TJ = 150oC, RG = 3, VGE = 15V, L = 100H, VCE = 600V IC = 30A, VCE = 300V IC = 30A, VCE = 300V VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Forward Voltage
IGBT and Diode at TJ = 25oC, ICE = 30A, VCE = 390V, VGE = 15V, RG = 3, L = 200H, Test Circuit (Figure 24)
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
HGT1N30N60A4D
Electrical Specifications
PARAMETER Diode Reverse Recovery Time TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL trr RJC TEST CONDITIONS IEC = 30A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s Thermal Resistance Junction To Case IGBT Diode NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. www..com MIN TYP 40 30 MAX 55 42 0.49 2.0 UNITS ns ns
oC/W oC/W
Typical Performance Curves
100
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
90 80 70 60 50 40 30 20 10 0 25 50 75 100
VGE = 15V
200
TJ = 150oC, R G = 3, VGE = 15V, L = 100H
150
100
50
125
150
0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
fMAX, OPERATING FREQUENCY (kHz)
300
TC 75oC
VGE 15V
VCE = 390V, RG = 3, TJ = 125oC 16 14 ISC 12 10 8 tSC 6 4 10 300 200 15 600 500 400 800 700
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.49oC/W, SEE NOTES TJ = 125oC, R G = 3, L = 200H, V CE = 390V 10 1 10 30 60
11
12
13
14
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
ISC, PEAK SHORT CIRCUIT CURRENT (A)
500
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
18
900
HGT1N30N60A4D Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 50 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s 40
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 50 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 40
30
30
20
TJ = 125oC TJ = 150oC TJ = 25oC
20
TJ = 125oC TJ = 150oC TJ = 25oC
10
10
0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 0 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 www..com
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3500 EON2 , TURN-ON ENERGY LOSS (J) 3000 2500 2000 1500 1000 500 0
EOFF , TURN-OFF ENERGY LOSS (J)
RG = 3, L = 200H, VCE = 390V
1400 RG = 3, L = 200H, VCE = 390V 1200 1000 800 TJ = 125oC, VGE = 12V OR 15V 600 400 200 0 TJ = 25oC, VGE = 12V OR 15V 0 10 20 30 40 50 60
TJ = 125oC, VGE = 12V, VGE = 15V
TJ = 25oC, VGE = 12V, VGE = 15V 0 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
34 td(ON)I, TURN-ON DELAY TIME (ns) RG = 3, L = 200H, VCE = 390V 32 30 28 26 24 22 20 TJ = 25oC, TJ = 125oC, VGE = 15V TJ = 25oC, TJ = 125oC, VGE = 12V
100 RG = 3, L = 200H, VCE = 390V 80 trI , RISE TIME (ns) TJ = 125oC, VGE = 15V, VGE = 12V
60 TJ = 25oC, VGE = 12V 40
20 TJ = 25oC, VGE = 15V
0
10
20
30
40
50
60
0
0
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
HGT1N30N60A4D Typical Performance Curves
220 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 200H, VCE = 390V 200 VGE = 12V, VGE = 15V, TJ = 125oC 60 tfI , FALL TIME (ns) TJ = 125oC, VGE = 12V OR 15V 50
Unless Otherwise Specified (Continued)
70 RG = 3, L = 200H, VCE = 390V
180
160
40 TJ = 25oC, VGE = 12V OR 15V 30
140 VGE = 12V, VGE = 15V, TJ = 25oC 120 10 20 30 40 50 60
www..com 0
20
0
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
350 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V 300 PULSE DURATION = 250s TJ = 25oC 250 200 TJ = 125oC 150 100 50 0 TJ = -55oC
15.0 12.5
IG(REF) = 1mA, RL = 15, TJ = 25oC VCE = 600V
10.0 7.5 5.0 2.5 0
VCE = 400V
VCE = 200V
6
7
8 9 10 11 VGE, GATE TO EMITTER VOLTAGE (V)
12
0
50
100
150
200
250
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
FIGURE 14. GATE CHARGE WAVEFORMS
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
5
RG = 3, L = 200H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
20
TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
4 ICE = 60A
16
3
12
2 ICE = 30A 1 ICE = 15A
8 ICE = 60A 4 ICE = 30A ICE = 15A 0 3 10 RG, GATE RESISTANCE () 100 300
0
25
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
HGT1N30N60A4D Typical Performance Curves
10 FREQUENCY = 1MHz
Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.3 2.2 2.1 2.0 1.9 1.8 1.7 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s, TJ = 25oC
C, CAPACITANCE (nF)
8
6 CIES 4
ICE = 60A ICE = 30A ICE = 15A
2
COES CRES
0 www..com
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE
35 IEC , FORWARD CURRENT (A) 30 25 20 15 10 5 0 DUTY CYCLE < 0.5%, PULSE DURATION = 250s trr , RECOVERY TIMES (ns)
100 90 80 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A) 125oC tb 25oC ta 25oC tb 125oC ta 25oC trr dIEC/dt = 200A/s 125oC trr
125oC
25oC
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Qrr , REVERSE RECOVERY CHARGE (nC)
60 50 40 30 20 25oC tb 10 0 200 125oC tb 25oC ta 125oC ta IEC = 30A, VCE = 390V
1400 1200 1000
VCE = 390V 125oC, IF = 40A 125oC, IF = 20A
trr , RECOVERY TIMES (ns)
800 600 400 200 0 200 25oC, IF = 20A
25oC, IF = 40A
300
400
500
600
700
800
900
1000
400
600
800
1000
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
diEC/dt, RATE OF CHANGE OF CURRENT (A/s)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
HGT1N30N60A4D Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100 0.50 0.20 10-1 0.10 0.05 t1 0.02 0.01 SINGLE PULSE 10-5 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 PD t2 100 101
www..com -2 10
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGT1N30N60A4D DIODE TA49373 90% VGE L = 200H VCE RG = 3 + HGT1N30N60A4D VDD = 390V ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
HGT1N30N60A4D Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior www..comto assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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