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IGBT
Optimized for switching up to 35 KHz
Preliminary data sheet
IXGA 14N120B IXGP 14N120B
VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 100 Clamped inductive load TC = 25C
Maximum Ratings 1200 1200 20 30 28 14 56 ICM = 28 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 W C C C C Features V V V V A A A A
G E C (TAB)
GC E
TO-220AB (IXGP)
TO-263 AA (IXGA)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md
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*International
standard packages
Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g
JEDEC TO-220AB and TO-263AA *Low VCE(sat) - for minimum on-state conduction losses - drive simplicity Applications
Weight
*MOS Gate turn-on
Symbol Test Conditions (TJ = 25C, unless otherwise specified) IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15V
Characteristic Values Min. Typ. Max.
VGE(th) ICES
3.0 TJ = 25C TJ = 125C
5.0 25 250 100 2.7 3.3
V A A nA V
* AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode * Capacitor
power supplies discharge
Advantages
* Easy to mount with one screw * Reduces assembly time and cost * High power density
(c) 2005 IXYS All rights reserved
DS99382(04/05)
IXGA 14N120B IXGP 14N120B
TO-220 AB Dimensions Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs IC = IC110 VCE = 10 V Pulse test, t 300 s, duty cycle 2 % IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25C IC =IC110 , VGE = 15 V VCE = 960 V, RG = Roff = 120 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC110 , VGE = 15 V VCE = 960 V, RG = Roff = 120 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC110, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz VGE = 10 V, VCE = 10V 35 535 36 14 30 6.0 12 15 30 500 330 2.6 15 30 0.8 610 600 4.85 0.83 750 500 4.0 A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline
Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side
Characteristic Values Min. Typ. Max. 5.0 9.0 S
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1. 2. 3. 4.
Gate Collector Emitter Collector Bottom Side
Dim.
Min. Recommended Footprint (Dimensions in inches and mm)
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXGA 14N120B IXGP 14N120B
Fig. 1. Output Characteristics @ 25C
28 24 20 VGE = 15V 13V 11V 80 VGE = 15V 70 60 13V
Fig. 2. Extended Output Characteristics @ 25C
I C - Amperes
I C - Amperes
50 40 30 20
16 12 8
11V
9V
9V
7V 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 10 0 0 2 4 6 8 10 12 14 16 18 20 7V
V C E - Volts Fig. 3. Output Characteristics @ 125C
28 24 20 VGE = 15V 13V 11V 1.7 1.6 1.5
V C E - Volts Fig. 4. Dependence of V CE (sat) on Tem perature
V GE = 15V
I C = 28A
VC E (sat) - Normalized
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
I C - Amperes
16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5
9V
I C = 14A
7V
I C = 7A
4
4.5
5
-50
-25
0
25
50
75
100
125
150
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V C E - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
7 TJ = 25C 6 I C = 28A 14A 7A 20 18 16
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
I C - Amperes
14 12 10 8 6 TJ = 125C 25C -40C
VC E - Volts
5
4
3
4 2
2 6 7 8 9
0
V G E - Volts
10
11
12
13
14
15
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V G E - Volts
(c) 2005 IXYS All rights reserved
IXGA 14N120B IXGP 14N120B
Fig. 7. Transconductance
11 10 9 8 TJ = -40C 25C 125C 16 14 I C = 28A
Fig. 8. Dependence of Turn-Off Energy on R G
7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20
E o f f - milliJoules
12 10 8 6 4 2 I C = 7A 0 100 150 200 250 300 350 400 450 500
g f s - Siemens
TJ = 125C VGE = 15V VCE = 960V I C = 14A
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on I C
11 10 9 R G = 120 VGE = 15V VCE = 960V TJ = 125C 11 10 9
R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature
7 6 5 4 3 2 1 0 6 8 10 12 14 16 18 20 22 24 26 28 TJ = 25C
E o f f - milliJoules
E o f f - milliJoules
8
8 7 6 5 4 3 2 1 0 25 35 45 55 65 75 R G = 120 VGE = 15V VCE = 960V
I C = 28A
I C = 14A
I C = 7A 85 95 105 115 125
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I C - Amperes
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off
1000
Fig. 11. Dependence of Turn-Off Sw itching Tim e on R G
2000 1 800 1 600 1 400 1 200 1 000 800 600 400 200 100 150 200 250 300 350 400 450 500
Sw itching Tim e on I C td(off) , tfi - - - - -
td(off) tfi - - - - TJ = 125C VGE = 15V VCE = 960V I C = 7A 14A 28A 14A 7A
Switching Time - nanoseconds
Switching Time - nanoseconds
900 800 700 600 500 400 300 200 100 6 8 10
R G = 120, VGE = 15V VCE = 960V TJ = 125C
TJ = 25C
12
14
16
18
20
22
24
IXYS reserves the right to change limits, test conditions, and dimensions.
R G - Ohms
I C - Amperes
IXGA 14N120B IXGP 14N120B
Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature
1100 1000 30
Fig. 14. Reverse-Bias Safe Operating Area
27
td(off) tfi - - - - R G = 120 VGE = 15V VCE = 960V I C = 28A 14A 7A
Switching Time - nanoseconds
900 800 700 600 500 400 300 200 100 25
24 21
I C - Amperes
18 15 12 9 6 3 0 TJ = 125 C R G = 120 dV/dT < 10V/ns
I C = 7A 14A 28A 35 45 55 65 75 85 95 105 115 125
100
200
300
400
C E - Volts
500
600
TJ - Degrees Centigrade
V
Fig. 15. Gate Charge
16 14 12 VCE = 600V I C = 14A I G = 10mA 1000
Fig. 16. Capacitance
f = 1 MHz
Capacitance - picoFarads
C ies
VG E - Volts
10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 27 30
100 C oes
C res 10 0 5 10 15 20 25 30 35 40
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Q G - nanoCoulombs
V CE - Volts
Fig. 17. Maxim um Transient Therm al Resistance
1
R(th )JC - C/W
0.1 0.1 1
Pulse Width - milliseconds
10
100
1000
(c) 2005 IXYS All rights reserved

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