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HiPerFASTTM IGBTs B2-Class High Speed
IXGA16N60B2 IXGP16N60B2
VCES = IC110 = VCE(sat) tfi(typ) =
600V 16A 2.3V 70ns
TO-263 AA (IXGA)
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight
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Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, 1ms VGE = 15V, TJ = 125C, RG = 22 Clamped Inductive load TC = 25C
Maximum Ratings 600 600 20 30 40 16 100 ICM = 32 VCE VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C Nm/lb.in. N/lb. C C g g
G E C (Tab)
TO-220AB (IXGP)
G
CE
C (Tab)
G = Gate E = Emitter
C = Collector Tab = Collector
Mounting Torque (TO-220) Mounting Force (TO-263)
1.13/10 10..65 / 2.2..14.6 300 260 2.5 3.0
Features Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications
Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s TO-263 TO-220
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = 12A, VGE = 15V, Note1 TJ = 125C VCE = VCES,VGE = 0V
Characteristic Values Min. Typ. Max. 3.0 5.5 V 15 A 250 A 100 nA 2.30 1.65 V V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
(c) 2010 IXYS CORPORATION, All Rights Reserved
DS99141B(08/10)
IXGA16N60B2 IXGP16N60B2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 125C IC = 12A, VGE = 15V VCE = 400V, RG = 22 Note 2 Inductive load, TJ = 25C IC = 12A, VGE = 15V VCE = 400V, RG = 22 Note 2 IC = 12A, VGE = 15V, VCE = 0.5 * VCES IC = 12A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 8 675 60 20 24 5 13 18 20 0.16 73 70 0.12 17 20 0.26 140 125 0.38 0.50 S pF pF pF nC nC nC ns ns mJ ns ns 0.22 mJ ns ns mJ ns ns mJ 0.83 C/W C/W
1 = Gate 2 = Collector 3 = Emitter 4 = Collector
TO-263 (IXGA) Outline
TO-220
TO-220 (IXGP) Outline
Notes:
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
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1 = Gate 2 = Collector Pins: 3 = Emitter 1 - Gate
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA16N60B2 IXGP16N60B2
Fig. 1. Output Characteristics @ T J = 25C
24 VGE = 15V 13V 12V 100 90 11V 80 70 14V 13V 12V 11V 10V 9V 8V 0 5 10 15 20 25 30 VGE = 15V
Fig. 2. Extended Output Characteristics @ T J = 25C
20
IC - Amperes
16 10V 12
IC - Amperes
3
60 50 40 30 20
8
9V
4
8V 7V 0 0.5 1 1.5 2 2.5
10 0
0
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125C
24 VGE = 15V 13V 12V 1.4 11V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 3 0 25 VGE = 15V
Fig. 4. Dependence of VCE(sat) on Junction Temperature
20
IC - Amperes
16
10V
12 9V
VCE(sat) - Normalized
I
C
= 24A
I
C
= 12A
8
8V 4 7V 0 0 0.5 1 1.5 2 6V 2.5
I
C
= 6A
50
75
100
125
150
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.0 4.5 4.0 TJ = 25C
Fig. 6. Input Admittance
35 30 25
IC - Amperes
VCE - Volts
3.5 3.0 2.5 2.0 1.5 1.0 8 9 10 11 12 13 14 15 12A I = 24A
20 15 10 5 0 4 5 6 7 8 9 10 11 12 TJ = - 40C 25C 125C
C
6A
VGE - Volts
VGE - Volts
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2 IXGP16N60B2
Fig. 7. Transconductance
18 16 14 TJ = - 40C 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 0 5 10 15 20 25 VCE = 300V I C = 12A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
12 10 8 6 4 2 0
25C
VGE - Volts
125C
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 35
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz
30
Capacitance - PicoFarads
IC - Amperes
1,000
Cies
25 20 15 10 TJ = 125C 5 RG = 22 dv / dt < 10V / ns
100
Coes
10 0 5 10 15 20
Cres 25 30 35 40
0 100
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
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VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
Z (th)JC - C / W
0.1
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2 IXGP16N60B2
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
1.2 1.1 1.0 0.9 Eoff VCE = 400V I C = 24A Eon 1.1 1 0.9 0.8 0.7
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
Eoff VCE = 400V Eon
1 0.9 0.8 0.7
---
1.0 0.9
----
TJ = 125C , VGE = 15V
RG = 22 , VGE = 15V
Eoff - MilliJoules
Eoff - MilliJoules
0.8
Eon - MilliJoules
Eon - MilliJoules
0.8 0.7 0.6 0.5 0.4 0.3 0.2 20 30 40 50 60 70 80
0.7 0.6 0.5 0.4
0.6 0.5 0.4 0.3 0.2 0.1 0 12 13 14 15 16 17 18 19 20 21 22 23 24 TJ = 25C TJ = 125C
0.6 0.5 0.4 0.3 0.2 0.1 0
I
C
= 12A
0.3 0.2 0.1 100
90
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
1 0.9 0.8 Eoff VCE = 400V Eon 1 190 180 170
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
330 0.9 0.8
----
tfi
VCE = 400V
td(off) - - - -
RG = 22 , VGE = 15V
300 270
TJ = 125C, VGE = 15V
t f i - Nanoseconds
Eoff - MilliJoules
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 35 45 55 65 75 85 95 105 115 I C = 12A I C = 24A
0.7
t d(off) - Nanoseconds
160 150 140 130 120 110 100 20 30 40 50 60 70 80 90 I
C
240 210 = 24A I
C
Eon - MilliJoules
0.6 0.5 0.4 0.3 0.2 0.1 0 125
180 = 12A 150 120 90 60 100
TJ - Degrees Centigrade
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
200 180 160 200 180 160 140 120 100 80 60 40 25
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
180 180 160 140
tfi
VCE = 400V
td(off) - - - -
tfi
VCE = 400V
td(on) - - - -
RG = 22 , VGE = 15V
RG = 22 , VGE = 15V
160 140 120 100 80 60 40 125
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
140 120 100 80 60 40 12 13 14 15 16 17 18 19 20 21 22 23 24 TJ = 25C TJ = 125C
t f i - Nanoseconds
120 100 80 60 40
I C = 24A, 12A
35
45
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2 IXGP16N60B2
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
90 80 70 55 55 50 45
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
23 50 45
tri
VCE = 400V
td(on) - - - -
tri
VCE = 400V
td(on) - - - -
TJ = 125C, VGE = 15V
RG = 22 , VGE = 15V
22 21 TJ = 25C, 125C 20 19 18 17 16 15
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
60 50 40 30 20 10 0 20 30 40 50 60 70 80 90 I
C
40 35 I
C
t r i - Nanoseconds
40 35 30 25 20 15 12 13 14 15 16 17
= 24A
30 25 = 12A 20 15 10 100
18
19
20
21
22
23
24
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
60 55 50 24
tri
VCE = 400V
td(on) - - - -
23 22
RG = 22 , VGE = 15V
t d(on) - Nanoseconds
t r i - Nanoseconds
45 40 35 30 25 20 15 10 25 35 45 55 65 75 85 95 105 115 I C = 12A I
C
21 = 24A 20 19 18 17 16 15 14 125
TJ - Degrees Centigrade
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXG_16N60B3D1(3D)8-02-10

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