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| www..com Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GI3403 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 200m -10A The GI3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-251 package is universally used for commercial-industrial applications. *Simple Drive Requirement *Lower Gate Charge *Fast Switching Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=70 : IDM PD @TC=25 : Tj, Tstg Ratings -30 20 -10 -8.6 -48 36.7 0.29 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 3.4 110 Unit : /W : /W GI3403 Page: 1/4 ISSUED DATE :2005/02/25 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -30 -1.0 - Typ. -0.1 2 3.8 1.7 1.6 6.7 20.8 14.9 4.4 217 103 31 Max. -3.0 100 -1 -25 200 400 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VGS= 20V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A ID=-6A VDS=-24V VGS=-4.5V VDS=-15V ID=-6A VGS=-10V RG=2 RD=2.5 VGS=0V VDS=-25V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. - Typ. 35 63 Max. -1.2 - Unit V ns nC Test Conditions IS=-1.25A, VGS=0V IS=-6A, VGS=0V dI/dt=100A/ s Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. GI3403 Page: 2/4 ISSUED DATE :2005/02/25 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GI3403 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/02/25 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI3403 Page: 4/4 |
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