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| Bulletin I27133 rev. H 10/02 IRK.105 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage ADD-A-pakTM GEN V Power Modules Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters I T(AV) or IF(AV) @ 85C I O(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It 2 IRK.105 105 235 1785 1870 15.91 14.52 159.1 400 to 1600 - 40 to 150 - 40 to130 Units A A A A KA 2s KA 2s KA 2s V o o @ 50Hz @ 60Hz I t V RRM range TSTG TJ (*) As AC switch. 2 C C www.irf.com 1 IRK.105 Series Bulletin I27133 rev. H 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 06 08 IRK.105 10 12 14 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600 IRRM IDRM 130C mA 20 On-state Conduction Parameters IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 235 A 1785 1870 1500 1570 2000 2100 I2t Max. I2t for fusing 15.91 14.52 11.25 10.27 20.00 18.30 I2t Max. I2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 150 A/s 1.64 V 159.1 0.80 0.85 2.37 2.25 K A2s V m KA2s t =10ms t =10ms t =10ms t =10ms t =10ms t =10ms or 105 180o conduction, half sine wave, TC = 85oC IRK.105 Units Conditions I(RMS) t =8.3ms reapplied I(RMS) Sinusoidal half wave, Initial TJ = TJ max. No voltage 100% VRRM TJ = 25oC, No voltage 100% VRRM TJ = 25oC, t =8.3ms reapplied t =8.3ms no voltage reapplied t =8.3ms reapplied t =8.3ms reapplied t =8.3ms no voltage reapplied t = 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = p x IT(AV) IFM = p x IF(AV) TJ = TJ max TJ = TJ max TJ = 25C Initial TJ = TJ max. VT(TO) Max. value of threshold T J = 25oC, from 0.67 VDRM, ITM =p x IT(AV), I = 500mA, g tr < 0.5 s, tp > 6 s TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x p x IAV < I < p x IAV (1) I2t for time tx = I2t x tx (4) I > p x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 2 www.irf.com IRK.105 Series Bulletin I27133 rev. H 10/02 Triggering Parameters PGM IGM Max. peak gate power IRK. 105 12 3 3 10 4.0 2.5 1.7 270 150 80 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative V TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C Anode supply = 6V resistive load Anode supply = 6V resistive load mA TJ = 25C TJ = 125C o 0.25 6 V mA TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) 500 V/s shorted TJ = 130oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 20 mA TJ = 130oC, gate open circuit IRK.105 Units Conditions (5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temp. range IRK.105 - 40 to 130 Units Conditions C - 40 to 150 RthJC Max. internal thermal resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque 10% to heatsink busbar wt Approximate weight Case style 0.1 5 Nm 3 110 (4) TO-240AA gr (oz) JEDEC 0.135 K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Per module, DC operation R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.105 Sine half wave conduction 180o 0.04 120o 0.05 90o 0.06 60o 0.08 30o 0.12 180o 0.03 Rect. wave conduction 120o 0.05 90o 0.06 60o 0.08 30o 0.12 Units C/ W www.irf.com 3 IRK.105 Series Bulletin I27133 rev. H 10/02 Ordering Information Table Device Code IRK.106 types With no auxiliary cathode IRK 1 1 2 3 4 5 6 - T 2 105 3 / 16 4 A 5 S90 6 Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs e.g. : IRKT106/16A etc. * * Available with no auxiliary cathode. To specify change: 105 to 106 Outline Table Dimensions are in millimeters and [inches] IRKT (1) ~ IRKH (1) ~ IRKL (1) ~ IRKN (1) - + (2) + (2) + (2) (2) + (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) (3) (3) K2 G2 (7) (6) (3) + G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.105 Series Bulletin I27133 rev. H 10/02 Maximum Allowable Case Temperature (C) IRK.105.. Series R thJC (DC) = 0.27 K/W Maximum Allowable Case Temperature (C) 130 120 110 130 120 110 IRK.105.. Series R (DC) = 0.27 K/W thJC Conduction Angle Conduction Period 100 90 80 70 100 90 80 70 30 60 30 90 120 180 60 90 120 180 DC 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 160 140 120 100 80 60 40 20 0 0 20 40 60 Conduction Angle Fig. 2 - Current Ratings Characteristics 200 180 160 140 120 180 120 90 60 30 RMS Limit Maximum Average On-state Power Loss (W) DC 180 120 90 60 30 100 RMS Limit 80 60 40 20 0 0 20 40 60 Conduction Period IRK.105.. Series Per Junction T J = 130C 80 100 120 IRK.105.. Series Per Junction T J = 130C 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 1600 1500 1400 1300 1200 1100 1000 900 800 700 1 IRK.105.. Series Per Junction 10 100 1800 1600 1400 1200 1000 800 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 130C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 130C No Voltage Reapplied Rated V RRMReapplied IRK.105.. Series Per Junction 0.1 Pulse Train Duration (s) 1 600 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.105 Series Bulletin I27133 rev. H 10/02 350 = SA R th Maximum Total On-state Power Loss (W) 300 250 200 150 Conduction Angle 180 120 90 60 30 0. 0.5 0. 7 K 1K 2 0. W K/ 3 K/ W K/ W 1 0. K/ W -D el ta R /W 100 50 0 IRK.105.. Series Per Module T J = 130C /W 2 K /W 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 7 - On-state Power Loss Characteristics 600 A hS Rt Maximum Total Power Loss (W) 500 400 300 200 100 0 180 (Sine) 180 (Rect) = 0. 1 W K/ 0. 2K /W -D ta el R 0. 3K /W 2 x IRK.105.. Series Single Phase Bridge Connected T J = 130C 0 40 80 120 160 0. 5 K/W 0.7 K/ W 1 K/W 2 K/W 200 0 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 8 - On-state Power Loss Characteristics 900 Maximum Total Power Loss (W) 800 700 600 500 400 300 200 100 0 0 40 80 120 3 x IRK.105.. Series Three Phase Bridge Connected T J = 130C 160 200 240 120 (Rect) R SA th = 0. 1 K/ W -D 0. 2 el ta K/ W R 0.3 0 .5 K/W K/ W 1 K/ W 0 280 20 40 60 80 100 120 140 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.105 Series Bulletin I27133 rev. H 10/02 1000 Instantaneous On-state Current (A) 100 T J= 25C 10 T J= 130C IRK.105.. Series Per Junction 1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics Maximum Reverse Recovery Charge - Qrr (C) Maximum Reverse Recovery Current - Irr (A) 700 600 500 50 A 140 120 100 80 60 40 20 10 IRK.105.. Series T = 125 C J I TM = 200 A 100 A 50 A 20 A 10 A IRK.105.. Series T J= 125 C I TM = 200 A 100 A 400 300 200 100 10 20 A 10 A 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/s) Rate Of Fall Of Forward Current - di/dt (A/s) Fig. 11 - Recovery Charge Characteristics 1 Steady State Value: R thJC = 0.27 K/W (DC Operation) Fig. 12 - Recovery Current Characteristics Transient Thermal Impedance Z thJC (K/W) 0.1 IRK.105.. Series Per Junction 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 13 - Thermal Impedance ZthJC Characteristics www.irf.com 7 IRK.105 Series Bulletin I27133 rev. H 10/02 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 200 W, tp = 300 s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = -40 C (b) TJ = 25 C TJ = 125 C 1 VGD IGD 0.1 0.001 0.01 (4) (3) (2) (1) IRK.105.. Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 14- Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 8 www.irf.com |
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