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MCR100-6A
Sensitive Gate Silicon Controlled Rectifiers
Features
2.Gate
Symbol
3. Anode
BVDRM = 600V IT(RMS) = 0.8 A ITSM = 10 A
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.2V(Typ.)@ ITM) Pb - Free Packages are available
1.Cathode
TO-92
General Description
Sensitive-gate triggering thyristor is suitable for the application where gate current limited such as small motor control, gate driver for large thyristor, sensing and detecting circuits.
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition
sine wave,50 to 60Hz,gate open half sine wave : TC = 74 C all conduction angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms t = 8.3ms TA = 25 C, pulse width TA = 25 C, t = 8.3ms TA = 25 C, pulse width TA = 25 C, pulse width 1.0 1.0 1.0
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 125
Units
V A A A A2 s W W A V C C
April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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MCR100-6A
Electrical Characteristics
Symbol Items
( TC = 25 C unless otherwise noted )
Conditions
VAK = VDRM or VRRM ; RGK = 1000 TC = 25 C TC = 125 C ( ITM = 1 A, Peak ) VAK = 6 V, RL=100
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
10 200 1.2 1.7 V
VTM
IGT
Gate Trigger Current (2)
TC = 25 C TC = - 40 C VD = 7 V, RL=100
200 500
VGT
Gate Trigger Voltage (2)
TC = 25 C TC = - 40 C VAK = 12 V, RL=100 VD = Rated VDRM , form , RGK = 1000 TJ = 125 C IPK = 20A ; PW = 10 Igt = 20mA TC = 125 C Exponential wave20 35 0.2
0.8 1.2
V
VGD
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise Off-State Voltage
V
dv/dt
V/
di/dt
; diG/dt = 1A/
50
A/
IH
Holding Current
VAK = 12 V, Gate Open Initiating Curent = 20mA TC = 25 C TC = - 40 C Junction to case Junction to Ambient
2
5.0 10 60 150
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
C/W C/W
Notes : 1. Pulse Width 1.0 ms , Duty cycle 1%
2. Does not include RGK in measurement.
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MCR100-6A
Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature
140
1
VGM(5V)
o
10
Max. Allowable Case Temperature [ C]
120
Gate Voltage [V]
PGM(2W) PG(AV)(0.1W) IGM(1A)
10
0
100
= 180
80
o
60
2
25 C
o
40
360
20
: Conduc t ion Angl e
VGD(0.2V)
10
-1
10
0
10
1
10
2
10
3
10
4
0 0.0
0.1
0.2
0.3
0.4
0.5
0.6
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
10
3
Fig 4. Thermal Response
Transient Thermal Impedance [ C/W]
On-State Current [A]
o
10
2
1
125 C
o
R (J-C)
10
1
25 C 0.1 0.5
o
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
0
10
-2
10
-1
10
0
10
1
10
2
10
3
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
Fig 6. Typical Gate Trigger Current vs. Junction Temperature
10
VGT(25oC)
VGT(toC)
IGT(25 C)
IGT(t C)
o
1
1
o
0.1 -50
0
50
100
o
150
0.1 -50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
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MCR100-6A
Fig 7. Typical Holding Current
10
0.8
Fig 8. Power Dissipation
= 180
o
Max. Average Power Dissipation [W]
0.7 0.6
= 90 = 30
o
o
= 120
o
= 60
o
0.5 0.4 0.3 0.2 0.1 0.0 0.0
IH(25 C)
IH(t C)
o
o
1
0.1 -50
0
50
100
o
150
0.1
0.2
0.3
0.4
0.5
0.6
Junction Temperature[ C]
Average On-State Current [A]
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MCR100-6A
TO-92 Package Dimension
mm Dim. Min. A B C D E F G H I J 0.33 2.54 2.54 0.48 0.013 4.43 4.43 14.07 Typ. 4.2 3.7 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min.
Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 Max.
A
E
B F
C
G 1 D 2 3
1. Cathode 2. Gate 3. Anode
J
H
I
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