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SPICE MODEL: MMDT4403
MMDT4403
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * *
Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)
E2 B2 C1 C2
A
B1 E1
SOT-363 Dim
BC
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
A B C D F
M
Mechanical Data
* * * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K2T Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.)
K
G H
0.65 Nominal
H J K L M a
J
D
F
L
C2
B1
E1
All Dimensions in mm
E2 B2 C1
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMDT4403 -40 -40 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead.
DS30110 Rev. 7 - 2
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MMDT4403
a Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4)
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 3/4 3/4 30 60 100 100 20 3/4 -0.75 3/4 3/4 3/4 1.5 0.1 60 1.0 200 Max 3/4 3/4 3/4 -100 -100 3/4 3/4 3/4 300 3/4 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 3/4 Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
Ccb Ceb hie hre hfe hoe fT
pF pF kW x 10-4 3/4 mS MHz
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
td tr ts tf
3/4 3/4 3/4 3/4
15 20 225 30
ns ns ns ns
VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA
Ordering Information (Note 5)
Device MMDT4403-7-F
Notes:
Packaging SOT-363
Shipping 3000/Tape & Reel
4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2T YM
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 M Apr 4
YM K2T
2001 2002 N May 5
K2T= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8
2006 T Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
DS30110 Rev. 7 - 2
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MMDT4403
250 PD, POWER DISSIPATION (mW)
0.5 IC IB = 10 0.4 TA = 25C
200
150
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
0.3
100
0.2
TA = 150C
50
0.1 TA = 50C 0
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current
1000
VBE(ON), BASE EMITTER VOLTAGE (V)
1000 hFE, DC CURRENT GAIN (NORMALIZED)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 TA = 150C TA = -50C TA = 25C
VCE = 5V
VCE = 5V
TA = 150C TA = 25C
100 TA = -50C
10
100
1
IC, COLLECTOR CURRENT (mA) Fig. 3 Base-Emitter Voltage vs. Collector Current
1
10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 DC Current Gain vs. Collector Current
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
30 20
100
Cibo
CAPACITANCE (pF)
10
10
5.0
Cobo
1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Gain Bandwidth Product vs. Collector Current
1.0 -0.1
-1.0
-10
-30
REVERSE VOLTS (V) Fig. 6 Typical Capacitance
DS30110 Rev. 7 - 2
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MMDT4403
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 1mA IC = 30mA IC = 10mA IC = 100mA IC = 300mA
0.01
0.1
1
10
100
IB, BASE CURRENT (mA) Fig. 7 Typical Collector Saturation Region
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.
DS30110 Rev. 7 - 2
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MMDT4403

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