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| Datasheet File OCR Text: |
| I .--em _-- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute`tiaximum I Parameter 1 Collector-BaseVoltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation junction Temperature Storage Temperature Thermal Resistance ( Ratinas at 25C / Symbol ( V,,, VEs VEBO `c PTO: TJ T ST0 8JC 1 Rating 56 56 3.0 5.6 175 200 -55 to +200 1.0 1 Units I v V v A W "C "C "Cl-W UNLESS CT-IERVISE NOTED. TCLERANCES ARE 1 I it .060'.002 (1521.05) f :NCH~:S ZOO5 :M!, LIHETERS T,13MM, - Electrical Characteristics I Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Input Power CollectorCurrent Input Return Loss Saturated Output Power Load Mismatch Tolerance Load Mismatch Tolerance at 25C ( Symbol BV,,, ICES BV,,, BvEBO 1 Min 56 1 Max 1 Units 1 5.0 V mA V V w A I,=50 mA v,,=2a v I,=50 mA I,=1 0 mA V,,=5.0 V, 1,=0.5 A Test Conditions 56 3.0 15 5.5 - 100 8.8 3.75 hFE P,N `c RL PST VSWR-T VSWR-T V,,=28 V, I,,=12 mA, PO,,=42 W, F=1450 MHz V,,=28 V, I& 2 mA, PO,?42 W, F=l450 MHz - Typical Optimum Device Impedances F(MHz) 850 z,(n) 950 1050 1150 1250 1350 1450 Specifications Subject 2.0 - j3.6 2.4 - j2.5 3.1 - il.8 3.5 - il.9 3.3 - j2.4 2.5 - j2.4 1.7-j1.8 to Change Without 1.4 - j0.5 1.2-jO.l Notice. |
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