 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., LTD 2SB772S MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. PNP SILICON TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882S Lead-free: 2SB772SL Halogen-free: 2SB772SG ORDERING INFORMATION Normal 2SB772S-x-AA3-R 2SB772S-x-AB3-R 2SB772S-x-T92-B 2SB772S-x-T92-K Ordering Number Lead Free 2SB772SL-X-AA3-R 2SB772SL-x-AB3-R 2SB772SL-x-T92-B 2SB772SL-x-T92-K Halogen Free 2SB772SG-x-AA3-R 2SB772SG-x-AB3-R 2SB772SG-x-T92-B 2SB772SG-x-T92-K Package SOT-223 SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E B C E E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-002.E 2SB772S ABSOLUTE MAXIMUM RATINGS (Ta = 25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current DC Collector Current Base Current SYMBOL VCBO VCEO VEBO ICP IC IB PNP SILICON TRANSISTOR RATINGS UNIT -40 V -30 V -5 V -7 A -3 A -0.6 A SOT-89 0.5 W Power Dissipation PD SOT-223 1 W TO-92 0.5 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25C, unless otherwise specified) SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW<300s, Duty Cycle<2% PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current TEST CONDITIONS IC=-100A, IE=0 IC=-1mA, IB=0 IE=-100A, IC=0 VCB=-30V ,IE=0 VCE=-30V ,IB=0 VEB=-3V, IC=0 VCE=-2V, IC=-20mA VCE=-2V, IC=-1A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.1A VCB=-10V, IE=0,f=1MHz MIN -40 -30 -5 TYP MAX UNIT V V V nA nA nA -1000 -1000 -1000 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 P 160 ~ 320 E 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R208-002.E 2SB772S TYPICAL CHARACTERICS DC Current Gain vs. Collector Current 800 VCE=-2V 150C 600 -102 400 -101 200 25C -1 -100 -103 -101 -102 Collector Current, Ic (mA) -104 -10-1 -103 PNP SILICON TRANSISTOR Collector-Emitter Saturation Voltage vs. Collector Current IC/IB=10 150C 25C 0 -10-1 -100 -101 -103 -102 Collector Current, Ic (mA) Collector Current vs. Collector-Emitter Voltage -104 Base-Emitter Saturation Voltage vs. -1.2 Collector Current IC/IB=10 2.0 1.6 25C -0.8 1.2 0.8 -0.4 150C 0.4 0 -10-1 -100 -101 -102 -103 -104 0 0 1 2 3 4 5 Collector Current, Ic (mA) Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R208-002.E |
Price & Availability of 2SB772SL-X-AA3-R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |