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| AP2306GN Pb Free Plating Product Advanced Power Electronics Corp. Capable of 2.5V gate drive Lower on-resistance Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 32m 5.3A Description SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Drain-Source Voltage Gate-Source Voltage www..com Parameter Rating 20 12 Units V V A A A W W/ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 5.3 4.3 10 1.38 0.01 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200509032 AP2306GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 Max. Units 30 35 50 90 1 10 100 V V/ m m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=250uA VDS=5V, ID=5.3A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= 12V ID=5.3A VDS=10V VGS=4.5V VDS=15V ID=1A RG=2,VGS=10V RD=15 VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/s Min. - Typ. 16.8 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. AP2306GN 80 50 T A =25 C 60 o 5.0V 4.5V 4.0V ID , Drain Current (A) V G =2.5V T A =150 C 40 o 5.0V 4.5V 30 ID , Drain Current (A) 4.0V 20 40 20 V G =2.5V 10 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 I D =5.3A T A =25 o C 80 1.6 I D =5.3A V G =4.5V Normalized R DS(ON) 1.4 RDS(ON) (m ) 60 1.2 1.0 40 0.8 20 1 3 5 7 9 11 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 100 1.4 10 1.2 T j =150 o C IS (A) 1 T j =25 o C VGS(th)(V) 1 0.8 0.6 0.1 0.4 0.01 0 0.4 0.8 1.2 1.6 0.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2306GN 14 1000 f=1.0MHz Ciss VGS , Gate to Source Voltage (V) 12 I D =5.3A V DS =16V 10 8 C (pF) 100 6 Coss Crss 4 2 10 0 0 5 10 15 20 25 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) DUTY=0.5 0.2 10 0.1 0.1 1ms ID (A) 1 0.05 PDM 0.01 10ms 0.1 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270/W 0.01 Single Pulse 100ms T A =25 o C Single Pulse 1s DC 0.1 1 10 100 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance RD VDS TO THE OSCILLOSCOPE D D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 0.75x RATED VDS G S VGS + 10 V - S VGS + 1~ 3 mA IG ID Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit |
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