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| Si3443BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.060 at VGS = - 4.5 V - 20 0.090 at VGS = - 2.7 V 0.100 at VGS = - 2.5 V ID (A) - 4.7 - 3.8 - 3.7 FEATURES * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC TSOP-6 Top V iew 1 6 (3) G (4) S 3 mm 2 5 3 2.85 mm 4 Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free) SI3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Part Marking Code: 3B (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.7 2.0 1.3 - 55 to 150 - 4.7 - 3.8 - 20 - 0.9 1.1 0.7 W C 5s - 20 12 - 3.6 - 2.8 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 board, t 5 s. t5s Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 62.5 110 36 C/W Unit For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Document Number: 72749 S-09-0660-Rev. C, 20-Apr-09 www.vishay.com 1 Si3443BDV Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.7 A, dI/dt = 100 A/s VDD = - 10 V, RL = 10 ID - 1.0 A, VGEN = - 4.5 V, Rg = 6 f = 1 MHz 5 VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A 6 1.4 1.9 9.5 22 35 45 25 25 16.2 35 55 70 40 50 ns 9 nC a a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.7 A VGS = - 2.7 V, ID = - 3.8 A VGS = - 2.5 V, ID = - 1 A VDS = - 10 V, ID = - 4.7 A IS = - 1.7 A, VGS = 0 V Min. - 0.6 Typ. Max. - 1.4 100 -1 -5 Unit V nA A A - 15 0.048 0.070 0.080 11 - 0.8 - 1.2 0.060 0.090 0.100 S V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 5 V thru 3.5 V 16 ID - Drain Current (A) ID - Drain Current (A) 3V 16 20 TC = - 55 C 25 C 125 C 12 12 2.5 V 8 2V 4 1.5 V 0 0 1 2 3 4 5 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 72749 S-09-0660-Rev. C, 20-Apr-09 Si3443BDV Vishay Siliconix TYPICAL CHARACTERISTICS 0.20 25 C, unless otherwise noted 1000 R DS(on) - On-Resistance () 0.16 C - Capacitance (pF) VGS = 2.7 V 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 800 Ciss 600 400 Coss 200 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 ID = 4.7 A 1.6 1.5 1.4 VDS = 10 V 3 RDS(on) - On-Resistance (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 1 2 3 4 5 6 7 8 Qg - Total Gate Charge (nC) 0.6 - 50 ID = 4.7 A Capacitance VGS - Gate-to-Source Voltage (V) 4 VGS = 10 V 2 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge 30 0.20 On-Resistance vs. Junction Temperature IS - Source Current (A) 10 TJ = 150 C TJ = 25 C R DS(on) - On-Resistance () 0.16 ID = 1 A 0.12 ID = 4.7 A 0.08 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72749 S-09-0660-Rev. C, 20-Apr-09 www.vishay.com 3 Si3443BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.6 50 0.4 VGS(th) Variance (V) ID = 250 A 0.2 Power (W) 40 30 0.0 20 - 0.2 10 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (s) 10 100 600 TJ - Temperature (C) Threshold Voltage 100 Limited by R(DS)on* 10 ID - Drain Current (A) IDM Limited Single Pulse Power P(t) = 0.001 s 1 ID(on) Limited TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified P(t) = 0.01 s P(t) = 0.1 s 0.1 P(t) = 1 s, 10 s DC Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72749 S-09-0660-Rev. C, 20-Apr-09 Si3443BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72749. Document Number: 72749 S-09-0660-Rev. C, 20-Apr-09 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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