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| FUO 50-16N Three Phase Rectifier Bridge in ISOPLUS i4-PACTM 1 3 4 5 VRRM = 1600 V ID(AV)M = 50 A IFSM = 200 A 1 2 5 Features Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM Ptot Symbol TC = 90C; sine 180 (per diode) TC = 90C TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Conditions (per diode) Conditions Maximum Ratings 1600 20 50 200 60 V A A A W * rectifier diodes for line frequency * ISOPLUS i4-PACTM package - isolated back surface - UL registered E 72873 - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline Applications * three phase mains rectifiers Dimensions in mm (1 mm = 0.0394") Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. TVJ = 25C TVJ = 125C 1.1 1.1 0.2 3.2 1.3 10 V V A mA VF IR RthJC RthJH Component Symbol TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight IF = 20 A; VR = VRRM; TVJ = 25C VR = 0.8*VRRM; TVJ = 125C (per diode) 2.1 K/W K/W Conditions Maximum Ratings -55...+150 -55...+125 C C V~ N IISOL 1 mA; 50/60 Hz mounting force with clip Conditions coupling capacity between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 2500 20...120 Characteristic Values min. typ. max. 40 pF mm mm 9 g 448 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-2 FUO 50-16N 60 350 1000 A 50 IF 40 30 A 300 IFSM 250 f = 50 Hz 200 VR = 0.8VRRM 150 It 2 VR = 0 V A2s TVJ = 25C TVJ = 45C 20 10 0 0.0 TVJ=125C TVJ= 25C TVJ = 125C 100 TVJ = 125C 50 0 0.001 100 0.01 t 0.1 s 1 1 t ms 10 0.5 1.0 VF 1.5 V 2.0 Fig. 1 Forward current vs. voltage drop per leg Fig. 2 Surge overload current Fig. 3 t versus time per diode 180 160 W 140 Ptot 120 100 80 60 40 RthHA [K/W] 0.2 0.5 1 1.5 2 3 5 60 A 50 Id(AV)M 40 30 20 10 20 0 0 10 20 30 Id(AV)M 40 A 0 30 60 TA 90 120 C 150 0 0 40 80 120 C 160 TH Fig. 5 Max. forward current vs. case temperature Id(AVM) = f (Tcase) Fig. 4 Power dissipation versus direct output current and ambient temperature; sinusoidal 120 2.5 K/W 2.0 ZthJC 1.5 Constants for ZthJc calculation 1.0 i 1 2 3 4 0.01 0.1 1 t 10 s Rthi (K/W) 1.159 0.1286 0.2651 0.5473 ti (s) 0.1015 0.1026 0.4919 0.62 0.5 0.0 0.001 Fig. 6 Transient thermal impedance junction to case Zthjc IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 2-2 448 |
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