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| BAT 15-04W Silicon Schottky Diode Preliminary data * DBS mixer applications up to 12 GHz * Low noise figure * Low barrier type 3 2 1 C1/A2 3 VSO05561 1 A1 2 C2 EHA07181 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 15-04W Maximum Ratings Parameter Diode reverse voltage Forward current Marking S8s Pin Configuration 1 = A1 2=C2 Symbol VR IF Ptot Tj Top Tstg Package 3=C1/A2 SOT-323 Value 4 110 100 150 -55 ... 150 -55 ... 150 Unit V mA mW C C C Total power dissipation, TS tbd C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) RthJA RthJS tbd tbd K/W Junction - soldering point 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm) 1 Oct-07-1999 BAT 15-04W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 5 A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching 1) IF = 10 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz CT RF Unit max. V typ. - V(BR) VF 4 VF - 0.23 - 0.32 0.4 20 mV - 5.5 0.35 - pF Forward resistance IF = 10mA / 50mA 1) VF is difference between lowest and highest VF in component 2 Oct-07-1999 BAT 15-04W Forward current IF = f (VF ) TA = Parameter 10 2 EHD07079 Reverse current IR = f (VR) TA = Parameter EHD07081 10 3 F mA 10 1 TA = -40 C 25 C 85 C 125 C R A 10 2 T A =125 C 85 C 10 0 10 1 25 C 10 -1 10 0 10 -2 0.0 10 -1 0.5 V VF 1.0 0 1 2 3 V 4 VR Diode capacitance CT = f (VR) f = 1MHz EHD07082 0.5 CT pF 0.4 0.3 0.2 0.1 0.0 0 2 V VR 4 3 Oct-07-1999 BAT 15-04W Forward current IF = f (TA *;TS ) * Package mounted on epoxy 300 mW Ptot 200 tbd 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 3 K/W RthJS 10 2 tbd IFmax / IFDC 10 2 tbd 10 1 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Oct-07-1999 |
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