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| LED - Chip discontinued Radiation Infrared Type DDH 6/21/2007 Technology AlGaAs/AlGaAs ELC-875-21 rev. 04/07 Electrodes N (cathode) up 1000 typ. dimensions (m) typ. thickness 180 m anode gold alloy, 1.5 m cathode gold alloy, 0.5 m dotted, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Forward voltage Reverse voltage Radiant power1 Radiant power2 Radiant power3 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 1000 Symbol Min Typ Max Unit IF = 20 mA IF = 300 mA IR = 100 A IF = 20 mA IF = 300 mA IF = 300 mA IF = 300 mA IF = 300 mA IF = 300 mA VF VF VR e e e p 0.5 tr, tf 860 5 2.0 1.3 1.66 1.8 2.1 V V V 3.0 49 95 875 45 25 890 mW mW mW nm nm ns Measured on bare chip on TO-18 header Measured on bare chip on TO-18 header and heat sink, 10s current flow 3 Measured on epoxy chip on TO-18 header and heat sink, 10s current flow (information only) Labeling Type EL-875-21 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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