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| LED - Chip discontinued Radiation Infrared Type DDH 6/21/2007 Technology AlGaAs/AlGaAs ELC-875-22 rev. 06/07 Electrodes N (cathode) up 650 O110 typ. dimensions (m) typ. thickness 180 m 480 anode gold alloy, 1.5 m cathode gold alloy, 0.5 m dotted, 25% covered LED-07 Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Forward voltage Reverse voltage Radiant power1 Radiant power2 Radiant power3 Radiant intensity1 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Measured on bare chip on TO-18 header Measured onbare chip on TO-18 header and heat sink 3 Measured on epoxy chip on TO-18 header and heat sink, 10s current flow (information only) 25 Symbol VF VF VR e e e e p 0.5 tr , tf IF = 20 mA IF = 100 mA IR = 100 A IF = 20 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA Min Typ 1.2 1.45 Max 1.4 1.8 Unit V V V 5 2.5 3.5 17 35 0.75 860 1.0 875 45 20 890 mW mW mW mW/sr nm nm ns Labeling Type EL-875-22 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of ELC-875-22
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