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Datasheet File OCR Text: |
LED - Chip Preliminary Radiation Infrared Type DDH 6/21/2007 Technology AlGaAs/AlGaAs EL-910-12 rev. 02/07 Electrodes P (anode) up 650 O110 typ. dimensions (m) typ. thickness 150 (25) m 480 cathode gold alloy, 0.5 m anode gold alloy, 1.5 m LED-07 Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Forward voltage2 Reverse voltage Radiant power1 Radiant power2 Radiant intensity1 Radiant intensity2 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Measured on bare chip on TO-18 header Measured on bare chip glued on a O 8 x 1mm Cu header (10 s after switched on) (for information only) 25 Symbol VF VF VR e e e e P 0.5 tr , tf IF = 20 mA IF = 350 mA IR = 10 A IF = 20 mA IF = 350 mA IF = 20 mA IF = 350 mA IF = 20 mA IF = 20 mA IF = 20 mA Min Typ 1.20 1.45 Max Unit V V V 5 2.5 20 0.75 12 900 910 60 40 920 mW mW mW/sr mW/sr nm nm ns Labeling Type EL-910-12 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out on EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of ELC-910-12
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