View IXFN300N10P_462954.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL 1mA Mounting torque Terminal connection torque Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C
IXFN300N10P
VDSS ID25
RDS(on) trr
= =
100V 295A 5.5m 200ns
Maximum Ratings 100 100 20 30 295 100 900 100 3 20 1070 -55 ... +175 175 -55 ... +175 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A A J V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g Easy to mount Space savings High power density Low gate drive requirement V 5.0 200 TJ = 150C 25 1.5 5.5 V nA A mA m Applications * DC-DC coverters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC and DC motor drives * Uninterrupted power supplies * High speed power switching applications Features * * * * Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance High current capability Isolation voltage 3000 V~ International standard package G = Gate S = Source
S D
miniBLOC, SOT-227 B E153432
S G
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
t = 1min t = 1s
Advantages
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 50A, Note 1
Characteristic Values Min. Typ. Max. 100 3.0
(c) 2008 IXYS CORPORATION, All rights reserved
DS100016(07/08)
IXFN300N10P
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 150A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 55 92 23 6100 417 36 35 56 25 279 84 107 0.14 S nF pF pF ns ns ns ns nC nC nC C/W C/W SOT-227B Outline (IXFN)
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 300 1000 1.3 200 0.71 10 A A V ns C A
Repetitive, pulse width limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 150A, -di/dt = 100A/s VR = 50V
Note 1: Pulse test, t 300s; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN300N10P
Fig. 1. Extended Output Characteristics @ 25C
350 300 250 VGS = 15V 10V 9V 300 VGS = 15V 10V 9V
Fig. 2. Output Characteristics @ 150C
250
ID - Amperes
8V 200 150 100 50 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
ID - Amperes
200
8V
150
7V
7V
100 6V 50 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
6V
VDS - Volts
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature
2.4 2.2 2.0 VGS = 10V 2.4 2.2 2.0 1.8
Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Drain Current
RDS(on) - Normalized
RDS(on) - Normalized
TJ = 175C VGS = 10V
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 I D = 300A I D = 150A
1.6 1.4 1.2 1.0 0.8 0 50
15V - - - - -
TJ = 25C
100
150
200
250
300
350
TJ - Degrees Centigrade
ID - Amperes
Fig. 5. Maximum Drain Current vs. Case Temperature
120 110 100 90 External Lead Current Limit
Fig. 6. Input Admittance
200 180 160 140 TJ = 150C 25C - 40C
ID - Amperes
80 70 60 50 40 30
ID - Amperes
120 100 80 60 40
20 10 0 -50 -25 0 25 50 75 100 125 150 175
20 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
TJ - Degrees Centigrade
VGS - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXFN300N10P
Fig. . Transconductance
180 160 140 TJ = - 40C 300 250 350
Fig. 8. Forward Voltage Drop of Intrinsic Diode
g f s - Siemens
IS - Amperes
120 100 80 60
25C
150C
200 150 TJ = 150C 100 TJ = 25C 50 0
40 20 0 0 20 40 60 80 100 120 140 160 180 200
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
ID - Amperes
VSD - Volts
Fig. 9. Gate Charge
10 9 8 7 VDS = 50V I D = 150A 100,000
Fig. 10. Capacitance
f = 1 MHz
Ciss
Capacitance - PicoFarads
I G = 10mA
VGS - Volts
10,000
6 5 4 3 2 1 0 0 40 80 120 160 200 240 280
Coss
1,000
Crss 100 0 5 10 15 20 25 30 35 40
QG - NanoCoulombs
VDS - Volts
Fig. 11. Forward-Bias Safe Operating Area
1,000 RDS(on) Limit 100s 1.000
Fig. 12. Maximum Transient Thermal Impedance
ID - Amperes
External Lead Limit 1ms
10 TJ = 175C TC = 25C Single Pulse 1 1 10 100 1000
Z(th)JC - C / W
100
0.100
0.010
10ms DC 100ms 0.001 0.0001 0.001 0.01 0.1 1 10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_300N10P(9S) 7-22-08

▲Up To Search▲

Price & Availability of IXFN300N10P

	To Download IXFN300N10P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .