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Advance Technical Information
GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN420N10T
RDS(on) trr
VDSS ID25
= =
100V 420A 2.3m 140ns
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C
Maximum Ratings 100 100 20 30 420 200 1000 100 5 20 1070 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W C C C C C V~ V~ Nm/lb.in. Nm/lb.in. g
G
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second
300 260 2500 3000 1.5/13 1.3/11.5 30
Mounting Torque Terminal Connection Torque
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 100 2.5 5.0 200 V V nA
50 A 5 mA 2.3 m
Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
DS100199(09/09)
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN420N10T
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 110 185 47 4390 530 1.46 47 155 115 255 670 170 195 S nF pF pF ns ns ns ns nC nC nC 0.14 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 150A, VGS = 0V -di/dt = 100A/s VR = 60V 0.38 7.00 Characteristic Values Min. Typ. Max. 420 1680 1.2 A A V
140 ns C A
Note 1. Pulse test, t 300s; duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN420N10T
Fig. 1. Output Characteristics @ T J = 25C
350 300 250 VGS = 15V 10V 8V 7V 400 350 300 VGS = 15V 10V 7V
Fig. 2. Extended Output Characteristics @ T J = 25C
6V 5.5V
ID - Amperes
200 150 100 50
6V
ID - Amperes
250 200 150
5V 100 50 4V
5V
4V 0 0.7 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150C
320 280 240 VGS = 15V 10V 8V 7V 2.6 2.4 6V 2.2 VGS = 10V I D < 420A
Fig. 4. Normalized RDS(on) vs. Junction Temperature
R DS(on) - Normalized
2.0 1.8 1.6 1.4 1.2 1.0 0.8
ID - Amperes
200 160 120
5V
4.5V 80 40 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 4V
0.6 0.4 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. Normalized RDS(on) vs. Drain Current
2.8 2.6 2.4 VGS = 10V
220 200 180
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R DS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 50 100 150
TJ = 175C
160
ID - Amperes
TJ = 25C 200 250 300 350
140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN420N10T
Fig. 7. Input Admittance
180 160 140 120 250 25C 350 TJ = - 40C 300
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
100 80
TJ = 150C 25C
200 150 100 50 0 150C
60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 - 40C
0
20
40
60
80
100
120
140
160
180
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 250
Fig. 10. Gate Charge
10 9 8 7 VDS = 50V I D = 210A I G = 10mA
IS - Amperes
200 150 TJ = 150C 100 TJ = 25C 50 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VGS - Volts
6 5 4 3 2 1 0 0 100 200 300 400 500 600 700
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100.0
10,000
Fig. 12. Forward-Bias Safe Operating Area
TJ = 175C
Capacitance - NanoFarads
Ciss 10.0
RDS(on) Limit 1,000 25s
TC = 25C Single Pulse
ID - Amperes
Coss 1.0
100
External Lead Limit
100s
10
1ms
f = 1 MHz
0.1 0 5 10 15 20 25
Crss
DC 1
10ms 100ms 100 1,000
30
35
40
1
10
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_420N10T (9V)9-22-09
IXFN420N10T
Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature
340 RG = 1 , VGS = 10V 300 VDS = 50V 320 280 240 RG = 1 , VGS = 10V VDS = 50V
Fig. 14. Resistive Turn-on Rise Time vs. Drain Current
t r - Nanoseconds
260 I 220
D
t r - Nanoseconds
= 200A
200 160 120 80 TJ = 25C TJ = 125C
180
140
I
D
= 100A 40 0
100 25 35 45 55 65 75 85 95 105 115 125
40
60
80
100
120
140
160
180
200
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance
700 240 700 600 500
Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature
220
tr
600 VDS = 50V
td(on) - - - 200
tf
VDS = 50V
td(off) - - - -
TJ = 125C, VGS = 10V
RG = 1, VGS = 10V
200 180 160
t d(off) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
500
I D = 200A
160
t f - Nanoseconds
400 I D = 200A 300 200 100 0 25 35 45 55 65 75 85 95 105 115 I D = 100A
400
120
140 120 100 80 125
300
I D = 100A
80
200
40
100 1 2 3 4 5 6 7 8 9 10
0
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs. Drain Current
500 260 800 700 220 600
Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance
800
tf
400 VDS = 50V
td(off) - - - -
tf
VDS = 50V
td(off) - - - -
RG = 1, VGS = 10V
TJ = 125C, VGS = 10V I D = 200A
700
t d(off) - Nanoseconds
600 500 I D = 100A 400 300 200 100
t d(off) - Nanoseconds
t f - Nanoseconds
300
TJ = 125C
180
t f - Nanoseconds
500 400 300 200 100 1 2 3 4 5 6 7 8 9 10
200
TJ = 25C
140
100
100
0 40 60 80 100 120 140 160 180
60 200
ID - Amperes
RG - Ohms
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN420N10T
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
0.200 0.100
.sadgsfgsf
Z(th)JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_420N10T (9V)9-22-09

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