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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR C High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) F H A FEATURES N K D E G F L 1 2 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 180 160 6 600 100 625 150 -55 150 UNIT V V V mA mA mW M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 1997. 5. 2 Revision No : 0 1/2 2N5551C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) DC Current Gain * hFE(2) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure * * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hfe NF TEST CONDITION VCB=120V, IE=0 VCB=120V, IE=0, Ta=100 VEB=4V, IC=0 IC=0.1mA, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=250 A Rg=1k , f=10Hz 15.7kHz MIN. 180 160 6 80 80 30 100 50 TYP. MAX. 50 50 50 250 0.15 0.2 1.0 1.0 300 6 20 200 8 dB V UNIT nA A nA V V V V MHz pF pF * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1997. 5. 2 Revision No : 0 2/2 |
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