 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDMS3662 N-Channel Power Trench(R) MOSFET March 2008 FDMS3662 N-Channel Power Trench MOSFET 100V, 49A, 14.8m Features Max rDS(on) = 14.8m at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL Tested RoHS Compliant (R) tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC Conversion Top Bottom S Pin 1 S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 56 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 100 20 49 57 8.9 90 384 104 2.5 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 C/W Package Marking and Ordering Information Device Marking FDMS3662 Device FDMS3662 Package Power 56 Reel Size 13'' Tape Width 12mm Quantity 3000 units (c)2008 Fairchild Semiconductor Corporation FDMS3662 Rev.C 1 www.fairchildsemi.com FDMS3662 N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VGS = 0V, VDS = 80V, VGS = 20V, VDS = 0V 100 74 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 8.9A VGS = 10V, ID = 8.9A, TJ = 125C VDD = 10V, ID = 8.9A 2.5 3.5 -10.8 11.4 19.0 37 14.8 24.7 4.5 V mV/C m S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50V, VGS = 0V, f = 1MHz f = 1MHz 3470 245 110 1.4 4620 325 165 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Charge Gate to Drain "Miller" Charge VDD = 50V, ID = 8.9A VDD = 50V, ID = 8.9A, VGS = 10V, RGEN = 6 25 15 32 6 54 18 15 40 26 52 10 75 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 8.9A VGS = 0V, IS = 2.1A (Note 2) (Note 2) 0.8 0.7 45 71 1.3 1.2 73 115 ns nC V IF = 8.9A, di/dt = 100A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 3mH, IAS = 16A, VDD = 100V, VGS = 10V (c)2008 Fairchild Semiconductor Corporation FDMS3662 Rev.C 2 www.fairchildsemi.com FDMS3662 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 90 VGS = 10V ID, DRAIN CURRENT (A) VGS = 8V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 7V VGS = 6.5V 2.5 VGS = 6V PULSE DURATION = 300s DUTY CYCLE = 2%MAX VGS = 6.5V VGS = 7V 2.0 60 1.5 30 VGS = 6V PULSE DURATION = 300s DUTY CYCLE = 2%MAX 1.0 VGS = 8V VGS = 10V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0.5 0 30 ID, DRAIN CURRENT(A) 60 90 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 40 SOURCE ON-RESISTANCE (m) 2.2 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 ID = 8.9A VGS = 10V PULSE DURATION = 300s DUTY CYCLE = 2%MAX 30 ID = 8.9A TJ = 125oC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) rDS(on), DRAIN TO 20 10 TJ = 25oC 0 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 90 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 2%MAX Figure 4. On-Resistance vs Gate to Source Voltage 90 VGS = 0V 10 1 0.1 0.01 TJ = -55oC TJ = 150oC TJ = 25oC ID, DRAIN CURRENT (A) VDS = 10V 60 TJ = 150oC TJ = 25oC 30 TJ = -55oC 0 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDMS3662 Rev.C 3 www.fairchildsemi.com FDMS3662 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 8.9A VDD = 50V 10000 Ciss 8 CAPACITANCE (pF) VDD = 25V VDD = 75V 1000 6 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) Coss 100 f = 1MHz VGS = 0V Crss 10 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 40 VGS = 10V TJ = 25oC Limited by Package 20 RJC = 1.2 C/W o TJ = 125oC 1 0.01 0.1 1 10 100 400 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TA, Ambient TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 2000 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V ID, DRAIN CURRENT (A) 10 SINGLE PULSE RJA = 125oC/W TA = 25oC 1ms 100 1 10ms THIS AREA IS LIMITED BY rDS(on) 100ms 1s 10s DC 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 400 1 0.5 -3 10 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDMS3662 Rev.C 4 www.fairchildsemi.com FDMS3662 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE t1 t2 o 1E-3 5E-4 -3 10 RJA = 125 C/W NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDMS3662 Rev.C 5 www.fairchildsemi.com FDMS3662 N-Channel Power Trench(R) MOSFET Dimensional Outline and Pad Layout (c)2008 Fairchild Semiconductor Corporation FDMS3662 Rev.C 6 www.fairchildsemi.com FDMS3662 N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2008 Fairchild Semiconductor Corporation FDMS3662 Rev.C www.fairchildsemi.com |
Price & Availability of FDMS3662
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |