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Preliminary Technical Information
GenX3TM 1200V IGBT
High speed PT IGBTs for 10-50kHz Switching
IXGH24N120C3H1
VCES = IC25 = VCE(sat) tfi(typ) =
1200V 48A 4.2V 110ns
Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 100C TC = 25C, 1ms TC = 25C TC = 25C VGE = 15V, TJ = 125C, RG = 5 Clamped inductive load @VCE 1200V TC = 25C
Maximum Ratings 1200 1200 20 30 48 24 96 20 250 ICM = 48 250 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ A W C C C Nm/lb.in. C C g
TO-247AD
G C E
TAB
G = Gate E = Emitter
C = Collector TAB = Collector
Features International standard packages: JEDEC TO-247AD IGBT and anti-parallel FRD in one package MOS Gate turn-on - drive simplicity Sonic-FRD diode - soft recovery with low IRM Avalanche rated Applications
Mounting torque Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s
1.13/10 300 260 6
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE TJ = 125C
Characteristic Values Min. Typ. Max. 1200 2.5 5.0 100 1.5 100 TJ = 125C 3.6 3.1 4.2 V V A mA nA V V
VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 20A, VGE = 15V, Note 2
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
(c) 2008 IXYS CORPORATION, All rights reserved
DS99942(01/08)
IXGH24N120C3H1
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 125C IC = 20A, VGE = 15V VCE = 600V, RG = 5 Note 1 Inductive load, TJ = 25C IC = 20A, VGE = 15V VCE = 600V, RG = 5 Note 1 IC = 24A, VGE = 15V, VCE = 0.5 * VCES IC = 24A, VCE = 10V, Note 2 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 10 17 1900 125 52 79 12 36 16 27 1.16 93 110 0.47 16 35 2.18 125 305 1.18 0.85 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ TO-247 (IXGH) AD Outline
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
2.00
0.25
0.50 C/W C/W
Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, unless otherwise specified) VF IRM trr RthJC Notes: 1. 2. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. Pulse test, t 300s; duty cycle, d 2%. IF = 20A, VGE = 0V TJ = 125C IF = 20A, -diF/dt = 750A/s, VR = 800V VGE = 0V 19 70 Characteristic Values Min. Typ. Max. 3.0 2.8 V V A ns 0.9 C/W
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH24N120C3H1
Fig. 1. Output Characteristics @ 25C
50 45 40 35 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5V 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 7V VGE = 15V 13V 11V 180 VGE = 15V 160 140 13V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
9V
120 100 80 60 40 20 7V 9V 11V
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
50 45 40 35 VGE = 15V 13V 11V 1.4 1.3
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I 9V
C
= 48A
VCE(sat) - Normalized
1.2 1.1 1.0 0.9 0.8 I
C
IC - Amperes
30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5V 7V
= 24A
0.7 0.6 -50 -25 0 25 50
I
C
= 12A
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
8.0 7.5 7.0 6.5 I = 48A 24A 12A TJ = 25C 60 55 50
C
Fig. 6. Input Admittance
45
TJ = - 40C 25C 125C
6.0 5.5 5.0 4.5
IC - Amperes
40 35 30 25 20 15
VCE - Volts
4.0 3.5 3.0 5 6 7 8 9 10 11 12 13 14 15
10 5 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH24N120C3H1
Fig. 7. Transconductance
26 24 22 20 25C TJ = - 40C 14 12 16 VCE = 600V I C = 24A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60
125C
VGE - Volts
70 80
10 8 6 4 2 0 0 10 20 30 40 50 60 70 80
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 55
Fig. 10. Reverse-Bias Safe Operating Area
50 45
f = 1 MHz
Capacitance - PicoFarads
IC - Amperes
1,000
Cies
40 35 30 25 20 15 10 TJ = 125C RG = 5 dV / dt < 10V / ns
Coes 100
Cres 10 0 5 10 15 20 25 30 35 40
5 0 200
400
600
800
1000
1200
1400
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3H1(4N)01-15-08C
IXGH24N120C3H1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
1.4 1.3 1.2 I Eoff VCE = 600V 0.9 0.8 0.7 0.6 0.5 4 6 8 10 12 14 16 18 20 I C = 10A 1.6 1.4 1.2 1.0 0.8 Eon C
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
2.6 2.4 1.8 1.6 1.4 Eoff VCE = 600V Eon 2.2
----
2.0 1.8
RG = 5 , VGE = 15V
= 20A
2.2
E
Eoff - MilliJoules
Eoff - MilliJoules
1.1 1.0
---
2.0 1.8
1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 11 12 13 14 15 16 17 18 19 20 TJ = 25C TJ = 125C
1.6 1.4 1.2 1.0 0.8 0.6 0.4
E
on
on
- MilliJoules
TJ = 125C , VGE = 15V
- MilliJoules
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
1.4 1.2 1.0 0.8 0.6 0.4 I C = 10A 0.2 0.0 25 35 45 55 65 75 85 95 105 115 0.4 0.0 125 Eoff VCE = 600V Eon 2.8 360 340 320
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
400
---I C = 20A
RG = 5 , VGE = 15V
2.4 2.0
tf
VCE = 600V
td(off) - - - -
360 320 280
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
Eoff - MilliJoules
t f - Nanoseconds
E - MilliJoules
300 280 260 I 240 220 200 4 6 8 10 12 14 16 18 20
C
on
1.6 1.2 0.8
I
C
= 20A
240 200 = 10A 160 120 80
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
380 340 300 130 125 300 120 350
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
140
tf
VCE = 600V
td(off) - - - 130
RG = 5 , VGE = 15V
t
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
TJ = 125C 260 220 180 140 100 60 20 10 11 12 13 14 15 16 17 18 19 20 TJ = 25C 115
d(off)
250 I 200
C
120 = 20A 110
- Nanoseconds
tf
VCE = 600V
td(off) - - - -
110 105 100 95
RG = 5 , VGE = 15V
150
I
C
= 10A
100
100 90 85 50 25 35 45 55 65 75 85 95 105 115
90
80 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH24N120C3H1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
60 55 50 23 42 38 34
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
17.5
tr
VCE = 600V
td(on) - - - -
I
C
= 20A
22 21
tr
VCE = 600V
td(on) - - - -
17.0 16.5 16.0 15.5
TJ = 125C, VGE = 15V
RG = 5 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
45 40 35 30 I 25 20 15 10 4 6 8 10 12 14 16 18 20
C
20 19 18 17 = 10A 16 15 14 13
30 26 TJ = 125C, 25C 22 18 14 10 10 11 12 13 14 15 16 17 18 19 20
15.0 14.5 14.0 13.5
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
40 19
tr
35 VCE = 600V
td(on) - - - 18
RG = 5 , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
30
I C = 20A
17
25
16
20
15
15
I
C
= 10A
14
10 25 35 45 55 65 75 85 95 105 115
13 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3H1(4N)01-15-08-C

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