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APTGT200DA120D3
Boost chopper
(R)
Trench IGBT Power Module
3
VCES = 1200V IC = 200A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance - M6 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat
Q2 6 7
1
2
3 4 5 7 6
2
1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD SCSOA
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Short Circuit Safe Operating Area
TC = 25C Tj = 125C
V W
800A@900V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-3
APTGT200DA120D3 - Rev 0 January, 2004
TC = 25C TC = 80C TC = 25C
Max ratings 1200 300 200 400 20 1040
Unit V A
APTGT200DA120D3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 6mA VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 200A RG = 3.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A RG = 3.6 Min
1200
Typ
Max 6 2.1 6.5 600
Unit V mA V V nA
1.4 5.0
1.7 2.0 5.8
Dynamic Characteristics
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Min
Typ 14 0.8 0.66 280 90 550 130 300 100 650 180
Max
Unit nF
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VF Erec Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =900A/s IF = 200A VR = 600V di/dt =900A/s
Min Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C
Typ 1.6 1.6 17 20 36
Max 2.1
Unit V mJ C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight IGBT Diode
Min
Typ
2500 -40 -40 -40 3 3 150 125 125 5 5 380
V C N.m g
M6 M6
APT website - http://www.advancedpower.com
2-3
APTGT200DA120D3 - Rev 0 January, 2004
Max 0.12 0.20
Unit
C/W
APTGT200DA120D3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
3-3
APTGT200DA120D3 - Rev 0 January, 2004

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