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| CORPORATION G2N5401 Description Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applications requiring high breakdown voltages. *Complementary to NPN Type G2N5551 *High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA)) Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -160 -150 -5 -600 625 Max. -50 -50 -0.2 -0.5 -1 -1 400 300 6 Unit V V V nA nA V mV V V Test Conditions IC=-100uA,IE=0 IC=-1mA,IB=0 IE=-10uA,IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IB=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Unit V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob at Ta = 25 : Min. -160 -150 -5 50 80 50 100 Typ. 160 - MHz pF Classification Of hFE2 Rank Range A 80-200 N 100-240 C 160-400 G2N5401 Page: 1/3 CORPORATION Characteristics Curve ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B G2N5401 Page: 2/3 CORPORATION ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N5401 Page: 3/3 |
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