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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 100N50P
VDSS ID25
RDS(on) trr
= =
500 V 90 A 49 m 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C External lead current limit TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 2 TC = 25 C
Maximum Ratings 500 500 30 40 90 75 250 100 100 5 20 1040 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features
* International standard package * Encapsulating epoxy meets
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque Terminal connection torque SOT-227B
300 2500 3000
UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
* miniBLOC with Aluminium nitride
l l
1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. 30 g
l
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125 C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 200 25 2000 49 V V nA A A m
Advantages
l l l
Easy to mount Space savings High power density
(c) 2006 IXYS All rights reserved
DS99497E(01/06)
IXFN 100N50P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 50 80 20 VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 140 36 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External) 29 110 26 240 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 96 78 S nF pF pF ns ns ns ns nC nC nC 0.12 C/W 0.05 C/W SOT-227B Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS = 20 V; ID = IT, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/s VR = 100V
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 100 250 1.5 200 0.6 6.0 A A V ns C A
1. Pulse test, t 300 s, duty cycle d 2 % Test current IT = 50 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFN 100N50P
Fig. 1. Output Characteristics @ 25C
100 90 80 70 V GS = 10V 8V 220 200 180 160 8V V GS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3
I D - Amperes
7V
140 120 100 80 60 40 6V 7V
6V
5V 3.5 4 4.5 5 5.5
20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26
V DS - Volts
V DS - Volts
Fig. 3. Output Characteristics @ 125C
100 90 80 70 V GS = 10V 8V 7V 3.1 2.8 2.5
Fig. 4. R DS(on) Normalized to ID = 50A Value v s. Junction Temperature
V GS = 10V
R DS(on) - Normalized
I D - Amperes
2.2 1.9 1.6 1.3 1 I D = 50A I D = 100A
60 50 6V 40 30 20 5V 10 0 0 1 2 3 4 5 6 7 8 9 10 11
0.7 0.4 -50 -25 0 25 50 75 100 125 150
V DS - Volts
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 50A Value vs. Drain Current
3 2.8 2.6 V GS = 10V TJ = 125C
70 90 80
Fig. 6. Maximum Drain Current vs. Case Temperature
External Lead Current Limit
R DS(on) - Normalized
2.4
I D - Amperes
TJ = 25C 0 20 40 60 80 100 120 140 160 180 200 220
2.2 2 1.8 1.6 1.4 1.2 1 0.8
60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
T J - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFN 100N50P
Fig. 7. Input Admittance
160 140 120 105 150 135 120
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
100 80 60 40
TJ = 125C 25C - 40C
90 75 60 45 30
TJ = - 40C 25C 125C
20 0 4 4.5 5 5.5 6 6.5 7 7.5
15 0 0 20 40 60 80 100 120 140 160 180
V GS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300 10 9 250 8 7 V DS = 250V I D = 50A I G = 10mA
Fig. 10. Gate Charge
I S - Amperes
200
V GS - Volts
TJ = 125C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
6 5 4 3 2 1
150
100
50
0
0 0 25 50 75 100 125 150 175 200 225 250
V SD - Volts
Q G - NanoCoulombs
Fig. 11. Capacitance
100,000 f = 1 MHz
1,000
Fig. 12. Forward-Bias Safe Operating Area
Capacitance - PicoFarads
C iss 10,000
100
RDS(on) Limit 25s 100s
I D - Amperes
C oss 1,000
1ms 10 DC TJ = 150C TC = 25C 1 10ms
C rss 100 0 5 10 15 20 25 30 35 40
10
100
1000
V DS - Volts
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 100N50P
Fig. 13. Maximum Transient Thermal Resistance
1.000
R (th)JC - C / W
0.100
0.010
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
(c) 2006 IXYS All rights reserved

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