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| UPF1080 80W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. www..com * * * ALL GOLD metal system for highest reliability. Industry standard package. Low intermodulation distortion of -30dBc at 80W (PEP). Package Type 440095 PN: UPF1080F Package Type 440134 PN: UPF1080P Page 1 of 10 UPF1080 Rev. 2 UPF1080 Maximum Ratings Rating Drain to Source Voltage, gate connected to source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Operating Junction Temperature www..com Symbol BVDSS BVGSS PD TSTG TJ Value 65 +/- 20 118 0.9 -65 to +150 200 Unit Volts Volts Watts W/oC o C o C Thermal Characteristics Characteristics Thermal Resistance, Junction to Case Symbol jc Typical 1.1 o Unit C/W Electrical DC Characteristics (TC =25C unless otherwise specified) Rating Drain to Source Voltage, gate connected to source (VGS = 0, IDS = 1mA) Drain to Source Leakage current (VDS = 28V, VGS = 0) Gate to Source Leakage current (VGS = 20V, VDS = 0) Threshold Voltage (VDS = 10V, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 500mA) Drain to Source On Voltage (VGS = 10V, IDS = 1A Forward Transconductance (VDS = 10V, ID = 5A) Symbol BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM Min 65 2.0 3.0 2.0 Typ 3.1 4.0 0.13 3.0 Max 1.0 1.0 5.0 6.0 Unit Volts mA A Volts Volts Volts S Page 2 of 10 UPF1080 Rev. 2 UPF1080 AC Characteristics (TC =25C unless otherwise specified) Rating Input Capacitance (VDS=26V, VGS=0V, freq= 1MHz) Output capacitance (VDS= 26V, VGS=0V, freq= 1MHz) Feedback capacitance (VDS=26V, VGS=0V, freq= 1MHz www..com RF Symbol CISS COSS CRSS Min - Typ 58 3.8 Max - Unit pF pF pF and Functional Tests (Tc=25C unless otherwise specified, Cree Microwave Broadband Fixture) Symbol GL GP D IMD VSWR* Min 9.5 9.0 45 10:1 Typ 10.5 10.0 52 -32 Max -30 Unit dB dB % dBc Rating Linear Power Gain, Single Tone (VDS=26V, IDQ=600mA, POUT=10W, f=894 MHz) Compressed Power Gain, Single Tone (VDS=26V, IDQ=600mA, POUT =80W, f=894 MHz) Drain Efficiency, Single Tone (VDS=26V, IDQ=600mA, POUT =80W, f=894 MHz) Intermodulation Distortion, Two Tone (VDS=26V, IDQ=600mA, POUT =80W PEP f1=864 MHz, f2=894.1MHz) Load Mismatch Tolerance (VDS=26V, IDQ=600mA, POUT =80W, f=894 MHz) Note (unless otherwise specified): 1. Source and load impedance shall be 50 ohms. *No degradation in device performance after test. CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed. Page 3 of 10 UPF1080 Rev. 2 UPF1080 Power Gain vs Output Power 15 14 13 GPE, Gain (dB) www..com 12 11 10 IDQ = 700 mA 600 mA 500 mA 400 mA 9 8 7 20 25 30 35 40 45 VDD = 26 V f = 894 MHz 50 55 POUT, Output Power (dBm) Intermodulation Distortion vs Output Power -20 IMD, Intermodulation Distortion (dBc) -30 3rd Order -40 -50 5th -60 7th -70 VDD = 26 V f1 = 894.0 MHz f2 = 894.1 MHz IDQ = 600 mA -80 25 30 35 40 POUT, Output Power (dBm), PEP 45 50 55 Page 4 of 10 UPF1080 Rev. 2 UPF1080 Intermodulation Distortion vs Output Power -10 IMD3, 3rd Order Intermodulation Distortion (dBc) -20 www..com -30 IDQ = 400 500 -40 600 A 700 -50 VDD = 26 V f1 = 894.0 MHz f2 = 894.1 MHz -60 25 30 35 40 45 50 55 POUT, Output Power (dBm), PEP Power Gain & Efficiency vs Output Power 14 13 12 GPE 11 10 9 8 7 20 25 30 35 40 45 50 55 POUT, Output Pow er (dBm) V DD = 26 V IDQ = 600 mA f = 894 MHz 20 10 0 40 30 70 60 50 Efficiency (%) Page 5 of 10 GPE , Power Gain (dB) UPF1080 Rev. 2 UPF1080 Power Gain and Efficiency vs Frequency 12.00 70.0 11.00 GPE 65.0 GPE, Power Gain (dB) www..com 10.00 9.00 V DD = 26 V IDQ = 400 mA POUT = 47.8 dBm 60.0 55.0 8.00 50.0 7.00 800 820 840 860 880 900 920 45.0 940 f, Frequency (MHz) Capacitance vs Drain Voltage 180 (1) For information only. This part is input matched. 160 140 C, Capacitance (pF) 120 CISS (1) 100 80 60 40 CRSS 20 0 0 5 10 15 20 25 COSS VDS, Drain-Source Voltage (V) Page 6 of 10 UPF1080 Rev. 2 Efficiency (%) UPF1080 DC Safe Operating Area 9.00 8.00 7.00 ID, Drain Current (A) 6.00 TF = 75oC 5.00 4.00 3.00 2.00 1.00 0.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 V DS , Drain Voltage (V) TJ = 175oC 100oC www..com Mean Time To Failure 10000000 MTF, Mean Time To Failure (Hrs 1000000 ID = 2 A 4A 100000 6A 10000 1000 120 140 160 180 200 220 TJ, Junction Temperature ( oC ) Page 7 of 10 UPF1080 Rev. 2 UPF1080 Impedance 1 www..com Frequency (MHz) 850 860 870 880 890 900 Z Source 0.45 - j1.10 0.46 - j1.12 0.48 - j1.14 0.49 - j1.16 0.51 - j1.18 0.52 - j1.20 Z Load 1.47 + j0.27 1.52 + j0.31 1.60 + j0.34 1.68 + j0.36 1.79 + j0.36 1.87 + j0.36 Note: VDD = 26V, IDQ = 600mA Page 8 of 10 UPF1080 Rev. 2 UPF1080 Test Fixture Layout www..com Test Fixture Schematic Page 9 of 10 UPF1080 Rev. 2 UPF1080 Product Dimensions UPF1080F -Package Number 440095 www..com UPF1080P -Package Number 440134 Page 10 of 10 UPF1080 Rev. 2 |
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