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| PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N120P VDSS = 1200V ID25 = 32A RDS(on) 310m 300ns trr miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 1200 1200 30 40 32 100 16 2 20 1000 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C C C V~ V~ Nm/lb.in. Nm/lb.in. g Advantages G = Gate S = Source G S S D D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) HDMOSTM Process 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 1200 3.5 6.5 300 50 5 V V nA A mA Easy to Mount Space Savings High Power Density Applications High Voltage Switch-Mode and Resonant-ModePower Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC Converters High Voltage DC-AC Inverters VGS = 10V, ID = 0.5 * ID25, Note 1 310 m (c) 2010 IXYS Corporation, All Rights Reserved DS99718H(03/10) IXFN32N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 17 28 21 1100 77 0.84 70 62 88 58 360 130 160 S nF pF pF ns ns ns ns nC nC nC 0.125 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s 1.9 15 Characteristic Values Min. Typ. Max. 32 128 1.5 300 A A V ns C A VR= 100V, VGS = 0V Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN32N120P Fig. 1. Output Characteristics @ T J = 25C 32 28 24 VGS = 10V 9V 70 60 50 VGS = 10V 9V Fig. 2. Extended Output Characteristics @ TJ = 25C ID - Amperes ID - Amperes 20 16 12 8 8V 40 8V 30 20 7V 4 0 0 1 2 3 4 5 6 7 8 9 10 10 0 0 5 10 15 20 25 30 7V VDS - Volts VDS - Volts Fig. 3. Output Characteristics TJ = 125C 32 28 24 VGS = 10V 8V 2.6 3.0 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature VGS = 10V R DS(on) - Normalized 2.2 1.8 1.4 1.0 0.6 0.2 I D = 32A I D = 16A ID - Amperes 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 18 20 22 6V 7V -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current 2.6 2.4 2.2 VGS = 10V 30 TJ = 125C 25 2.0 35 Fig. 6. Maximum Drain Current vs. Case Temperature R DS(on) - Normalized ID - Amperes TJ = 25C 0 10 20 30 40 50 60 70 1.8 1.6 1.4 20 15 10 1.2 1.0 0.8 5 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2010 IXYS Corporation, All Rights Reserved IXFN32N120P Fig. 7. Input Admittance 50 45 60 40 35 30 25 20 15 10 10 5 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 0 5 10 15 20 25 30 35 40 45 50 TJ = 125C 25C - 40C 50 25C 40 125C 30 20 70 TJ = - 40C Fig. 8. Transconductance VGS - Volts g f s - Siemens ID - Amperes ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 90 80 12 70 16 14 VDS = 600V I D = 16A I G = 10mA Fig. 10. Gate Charge IS - Amperes 60 50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 125C TJ = 25C VGS - Volts 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450 500 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 1000 Fig. 12. Forward-Bias Safe Operating Area RDS(on) Limit Capacitance - PicoFarads 10,000 Ciss 100 25s ID - Amperes 100s 10 1,000 Coss 1ms 1 10ms 100ms 100 0.1 f = 1 MHz 10 0 5 10 15 20 25 30 35 40 Crss 0.01 10 100 1,000 10,000 TJ = 150C Tc = 25C Single Pulse DC VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN32N120P Fig. 13. Maximum Transient Thermal Impedance 1.000 Fig. 13. Maximum Transient Thermal Impedance 0.300 0.100 Z(th)JC - C / W 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2010 IXYS Corporation, All Rights Reserved IXYS REF: F_32N120P(99) 3-04-10-D |
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