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| R N N-CHANNEL MOSFET JCS7N60FA MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 7.0 A 600 V 1.2 37 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 21pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 21pF) dv/dt RoHS ORDER MESSAGE Order codes JCS7N60FA-O-F-N-B Halogen Free NO Device Weight 2.20 g(typ) Marking JCS7N60FA Package TO-220MF Packaging Tube 201003A 1/8 R JCS7N60FA Unit V A A A V mJ A mJ V/ns W ABSOLUTE RATINGS (Tc=25) Parameter Drain-Source Voltage Drain Current Symbol VDSS ID T=25 T=100 IDM VGSS Value JCS7N60FA 600 7.0* 4.4* 28* 30 420 7.0 14.7 5.5 48 -continuous 1 Drain Current - pulse note 1 Gate-Source Voltage 2 EAS Single Pulsed Avalanche Energy note 2 1 Avalanche Currentnote 1 1 Repetitive Avalanche Currentnote 1 IAR EAR 3 dv/dt Peak Diode Recovery dv/dtnote 3 PD TC=25 -Derate above 25 Temperature TJTSTG Power Dissipation 0.38 W/ Operating and Storage Range Maximum Lead Soldering Purposes -55+150 Temperature for TL 300 * *Drain current limited by maximum junction temperature 201003A 2/8 R JCS7N60FA Tests conditions Min Symbol Typ Max Units ELECTRICAL CHARACTERISTICS Parameter Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 1242 1620 103 21 135 27 pF pF pF VGS(th) VDS = VGS , ID=250A 3.0 4.5 V BVDSS ID=250A, VGS=0V referenced to 600 V BVDSS/ ID=250A, 25 TJ - 0.65 - V/ IDSS VDS=600V,VGS=0V, TC=25 VDS=480V, TC=125 - - 10 100 100 A A nA IGSSF VDS=0V, VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=3.5A - 1.0 1.2 gfs VDS = 40V, ID=3.5A note 4 - 8.2 - S 201003A 3/8 R JCS7N60FA td(on) tr td(off) tf Qg Qgs Qgd VDS =480V , ID=7A VGS =10V note 45 VDD=300V,ID=7A,RG=25 note 45 27 63 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 72 153 112 234 76 162 37 7 21 45 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 7.0 A ISM - - 28 A VGS=0V, IS=7.0A - - 1.4 V trr Qrr VGS=0V, IS=7.0A dIF/dt=100A/s (note 4) - 415 4.6 - ns C THERMAL CHARACTERISTIC Max JCS7N60FA 2.6 62.5 Notes: 1 Pulse width limited by maximum junction temperature 2L=15.7mH, IAS=7.0A, VDD=50V, RG=25 ,Starting TJ=25 3 ISD 7.0A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 2L=15.7mH, IAS=7.0A, VDD=50V, RG=25 , TJ=25 3ISD 7.0A,di/dt 300A/s,VDDBVDSS, TJ=25 4300s,2 5 Symbol Rth(j-c) Rth(j-A) Unit /W /W 201003A 4/8 R JCS7N60FA Transfer Characteristics 10 ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Top 10 25 ID [A] ID [A] 150 1 1 Notes 1. 250s pulse test 2. TC=25 0.1 1 10 Notes 1.250s pulse test 2.VDS=40V 2 4 6 8 10 VDS [V] VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.40 1.35 1.30 Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 RDS (on) [ ] IDR [A] 1.25 1.20 1.15 1.10 1.05 1.00 0.95 VGS=10V VGS=20V 25 1 150 Note T j=25 0.1 Notes 1. 250s pulse test 2. VGS=0V 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 0.4 0.5 0.6 0.7 ID [A] VS D [V] Capacitance Characteristics 3.0x10 3 Gate Charge Characteristics 12 2.5x10 3 Ciss = Cgs +Cgd (Cds =shorted) Coss = Cds +Cgd Crss = Cgd 10 VDS=480V VDS=300V VDS=120V Capacitance [pF] 2.0x10 3 1.5x10 3 1.0x10 3 5.0x10 2 0.0 10 -1 VGS Gate Source Voltage[V] 8 6 4 2 VDS Drain-Source Voltage [V] 10 0 10 1 0 0 10 20 30 40 Qg Toltal Gate Charge [nC] 201003A 5/8 R JCS7N60FA On-Resistance Variation vs. Temperature 1.2 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 3.0 2.5 BVDS (Normalized) 1.1 RD (on ) (Normalized) 2.0 1.5 1.0 1.0 0.5 Notes 1. VGS=10V 2. ID=3.5A -50 -25 0 25 50 75 100 125 150 0.9 Notes 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 0.0 -75 0.8 -75 Tj [ ] T j [ ] Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature Transient Thermal Response Curve 201003A 6/8 R JCS7N60FA Unitmm PACKAGE MECHANICAL DATA TO-220MF 201003A 7/8 R JCS7N60FA NOTE Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201003A 8/8 |
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