 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU054N03D www..com N-Ch Trench MOSFET A C K D L FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. : RDS(ON)=5.4m (Max.) @ VGS=10V : RDS(ON)=10.1m (Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL RATING VDSS VGSS 30 20 79 A 316 111 48 W 3.8 150 -55 150 2.6 40 /W /W mJ Type Name Lot No UNIT V V DPAK (1) Marking DC@TC=25 Pulsed (Note1) (Note2) (Note3) (Note1) (Note2) ID IDP EAS PD Tj Tstg Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25 @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient KU054N03 D (Note1) (Note2) RthJC RthJA Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1 1 Pad of 2 oz copper. Note 3) L=18.0 H, IAS=79A, VDD=15V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) D 2 2 1 1 3 3 G S 2010. 6. 17 Revision No : 0 1/4 KU054N03D ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Reverse Recovery time Reverse Recovered charge Note 4) Pulse Test : Pulse width <300 VSD trr Qrr , Duty cycle < 2% VGS=0V, IS=30A IS=30A, dI/dt=100A/ IS=30A, dI/dt=100A/ (Note4) VGS=10V VGS=4.5V Ciss Coss Crss Rg Qg Qg Qgs Qgd td(on) tr td(off) tf VDD=15V, VGS=10V ID=30A, RG=1.6 (Note4) VDS=15V, VGS=10V, ID=30A (Note4) f=1MHz VDS=15V, f=1MHz, VGS=0V BVDSS IDSS IGSS Vth RDS(ON) gfs VGS=0V, ID=250 A VGS=0V, VDS=30V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=30A VGS=4.5V, ID=30A VDS=5V, ID=30A (Note4) (Note4) (Note4) 30 1.0 - www..com ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL 4.5 8.4 69 1 100 3.0 5.4 10.1 - V A nA V m S 1751 350 253 2.8 39.7 20.1 7.1 8.4 10.6 11.6 30.2 10.2 nC ns pF 0.8 23.5 9.7 1.2 - V ns nC 2010. 6. 17 Revision No : 0 2/4 KU054N03D www..com Fig1. ID - VDS 100 VGS=10V 5.0V 4.5V 4.0V 3.5V Drain to Source On Resistance RDS(ON) (m) Fig2. RDS(on) - ID 15 12 9 VGS=4.5V Drain Current ID (A) 80 60 40 3.0V 6 VGS=10V 20 0 0 3 0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 Drain to Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS VDS=5V Fig4. RDS(ON) - Tj Normalized On Resistance RDS(ON) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 VGS=4.5V, ID=30A VGS=10V, ID=30A 100 Drain Current ID (A) 80 60 40 20 0 Tj=150 C Tj=-55 C Tj=25 C 1 2 3 4 5 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Normalized Gate to Source Threshold Voltage Fig5. Vth - Tj 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 103 Fig6. IS - VSD Reverse Drain Current IS (A) VDS = VGS, ID = 250A 102 101 Tj=150 C Tj=25 C Tj=-55 C 100 10-1 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature Tj ( C ) Source to Drain Voltage VSD (V) 2010. 6. 17 Revision No : 0 3/4 KU054N03D www..com Drain to Source On Resistance RDS(ON) (m) Fig7. RDS(ON) - VGS 25 ID=30A Fig8. C - VDS 10000 f=1MHz Ciss 1000 Coss 15 10 5 0 Tj=150 C Capacitance C (pF) 20 Crss 100 Tj=25 C 2 4 6 8 10 0 0 5 10 15 20 25 30 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS 10 Fig10. Safe Operation Area 103 Gate to Source Voltage VGS (V) VDS = 15V, ID = 30A Drain Current ID (A) 8 102 ) ON 6 LI M IT 100us 1ms 10ms DC 101 R ( DS 4 2 100 VGS= 10V SINGLE PULSE TC= 25 C 0 0 9 18 27 36 45 10-1 10-2 10-1 100 101 102 Gate to Charge Qg (nC) Drain to Source Voltage VDS (V) Fig11. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 101 100 0.5 0.2 0.1 0.05 0.02 0.01 10-1 Single Pluse PDM t1 t2 RthJC= 2.4 C/W 10-2 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (sec) 2010. 6. 17 Revision No : 0 4/4 |
Price & Availability of KU054N03D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |