 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SiA911DJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.094 at VGS = - 4.5 V 0.131 at VGS = - 2.5 V 0.185 at VGS = - 1.8 V ID (A) - 4.5a - 4.5a - 4.5 a FEATURES Qg (Typ.) 4.9 nC * Halogen-free * TrenchFET(R) Power MOSFET * New Thermally Enhanced PowerPAK(R) SC-70 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6 Dual * Load Switch, PA Switch and Battery Switch for Portable Devices S S 1 2 1 S1 2 G1 D1 D1 6 5 2.05 mm G2 4 S2 2.05 mm D2 D2 3 DCX Part # code XXX Lot Traceability and Date code D1 Ordering Information: SIA911DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 Marking Code G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Limit - 20 8 - 4.5a - 4.5a - 3.6b, c - 2.9b, c -8 - 4.5a - 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) b, f t5s Steady State Symbol RthJA RthJC Typical 52 12.5 Maximum 65 16 Unit C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 C/W. Document Number: 74329 S-80437-Rev. C, 03-Mar-08 www.vishay.com 1 SiA911DJ Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 4.5 A, di/dt = 100 A/s, TJ = 25 C IS = - 4.5 A, VGS = 0 V - 0.85 30 13 10 15 TC = 25 C - 4.5 8 - 1.2 60 26 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 2.2 ID - 4.5 A, VGEN = - 8 V, Rg = 1 VDD = - 10 V, RL = 2.2 ID - 4.5 A, VGEN = - 4.5 V, Rg = 1 f = 1 MHz VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A VDS = - 10 V, VGS = 0 V, f = 1 MHz 355 75 50 8.5 4.9 0.75 1.2 8 10 35 40 50 5 10 20 10 15 55 60 75 10 15 30 15 ns 12.8 7.4 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 2.3 A VGS = - 1.8 V, ID = - 0.54 A VDS = - 10 V, ID = - 2.8 A 8 0.078 0.109 0.153 7 0.094 0.131 0.185 S - 0.4 - 20 - 16.2 2.1 -1 100 -1 - 10 V mV/C V nA A A Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74329 S-80437-Rev. C, 03-Mar-08 SiA911DJ Vishay Siliconix TYPICAL CHARACTERISTICS 10 25 C, unless otherwise noted 2.0 8 I D - Drain Current (A) I D - Drain Current (A) VGS = 2.5 thru 5 V 6 2V 4 1.5 V 2 1.6 1.2 TC = 125 C 0.8 TC = 25 C 0.4 TC = - 55 C 0 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.3 600 Transfer Characteristics 500 R DS (on) - On-Resistance () 0.25 VGS = 1.8 V C - Capacitance (pF) 400 Ciss 0.2 VGS = 2.5 V 0.15 300 200 Coss Crss 0.1 VGS = 4.5 V 100 0.05 0 2 4 6 I D - Drain Current (A) 8 10 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 4.5 A VGS - Gate-to-Source Voltage (V) 1.4 VDS = 10 V R DS(on) - On-Resistance (Normalized) 6 1.6 ID = 2.8 A Capacitance 1.2 4 VDS = 16 V 1.0 VGS = 4.5 V, 2.5 V, 1.8 V 0.8 2 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 74329 S-80437-Rev. C, 03-Mar-08 On-Resistance vs. Junction Temperature www.vishay.com 3 SiA911DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 0.3 I D = 2.8 A R DS(on) - On-Resistance () 0.25 I S - Source Current (A) TJ = 150 C TJ = 25 C 0.2 TA = 125 C 0.15 1 0.1 TA = 25 C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.05 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage 0.9 20 On-Resistance vs. Gate-to-Source Voltage 0.8 15 VGS(th) (V) Power (W) 0.7 ID = 250 A 0.6 10 5 0.5 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 10 Limited by RDS(on)* ID(on) limited Single Pulse Power, Junction-to-Ambient IDM limited 100 s I D - Drain Current (A) 1 1 ms 10 ms 100 ms 1s 10 s DC TA = 25 C Single Pulse BVDSS limited 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74329 S-80437-Rev. C, 03-Mar-08 SiA911DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 8 8 I D - Drain Current (A) Package Limited 4 Power Dissipation (W) 6 6 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74329 S-80437-Rev. C, 03-Mar-08 www.vishay.com 5 SiA911DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74329. www.vishay.com 6 Document Number: 74329 S-80437-Rev. C, 03-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SIA911DJ-T1-GE3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |