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| www..com MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H q IC...................................................................800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake) q AISiC base plate APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 570.25 190 171 570.25 570.25 6 - M8 NUTS C C C K (C) G E 124 0.25 140 C C C 40 20 E E A (E) CM E E E CIRCUIT DIAGRAM C E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 38 8 - 7MOUNTING HOLES 15 40 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 29.5 28 Mar. 2003 MITSUBISHI HVIGBT MODULES CM800E2C-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 95C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 3300 20 800 1600 800 1600 9600 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 2/3 module) IF = 800A, Clamp diode part IF = 800A dif / dt = -1600A / s, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/3 module) Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.80 4.00 120 12.0 3.6 5.7 -- -- -- -- 2.80 -- 270 -- -- 0.008 3.00 -- 270 -- 0.008 Max 10 7.5 0.5 4.94 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.64 1.40 -- 0.013 0.025 -- 3.90 1.40 -- 0.025 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W V s C K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800E2C-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25C COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT IC (A) VGE=14V 1200 VGE=15V VGE=20V 800 VGE=13V VGE=12V VGE=11V VGE=10V VCE=10V 1200 800 VGE=9V 400 VGE=8V VGE=7V 0 0 2 4 6 8 10 400 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 VGE=15V 10 Tj = 25C 8 IC = 1600A 6 IC = 800A 6 4 4 2 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2 IC = 320A 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 0V, Tj = 25C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies 6 4 Coes 2 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 EMITTER CURRENT IE (A) MITSUBISHI HVIGBT MODULES CM800E2C-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIMES (s) 3 2 100 7 5 3 2 10-1 7 5 td(off) td(on) tr tf VCC = 1650V, VGE = 15V RG = 2.5, Tj = 125C Inductive load 5 7 102 23 5 7 103 23 5 101 7 5 3 2 100 7 5 Irr 103 7 5 3 2 trr 5 7 102 23 5 7 103 23 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) 2.0 Eon 1.5 Eoff 1.0 0.5 0 Erec SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 VCC = 1650V, VGE = 15V, RG = 2.5, Tj = 125C, 2.5 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 VCC = 1650V, IC = 800A, VGE = 15V, Tj = 125C, 8 Inductive load 6 Eon 4 2 Eoff 0 400 800 CURRENT (A) 1200 1600 0 0 10 20 30 GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) VCC = 1650V IC = 800A 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 Single Pulse TC = 25C Rth(j - c)Q = 0.013K/ W Rth(j - c)R = 0.025K/ W 12 8 4 0 0 2000 4000 6000 8000 10000 10-2 10-3 2 3 5 7 10-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 TIME (s) GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (s) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 2.5 2 Mar. 2003 |
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