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PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 01 -- 30 May 2006 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304ND.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter Automotive applications
1.4 Quick reference data
Table 1. VCEO IC ICM RCEsat
[1] [2]
Quick reference data Conditions open base
[1]
Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance
Min [2]
Typ 75
Max -80 -3 -5 100
Unit V A A m
single pulse; tp 1 ms IC = -2 A; IB = -200 mA
-
Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp 300 s; 0.02.
Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector
1 2 3 6 5 4 3 4
sym030
Simplified outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3. Ordering information Package Name PBSS304PD SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Marking
Table 4. Marking codes Marking code AJ Type number PBSS304PD
PBSS304PD_1
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Product data sheet
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation single pulse; tp 1 ms Tamb 25 C
[1] [3] [4] [2] [1][5]
Conditions open emitter open base open collector
[1] [2]
Min -65 -65
Max -80 -80 -5 -1 -3 -5 -800 -2 360 600 750 1.1 2.5 150 +150 +150
Unit V V V A A A mA A mW mW mW W W C C C
single pulse; tp 1 ms
Tj Tamb Tstg
[1] [2] [3] [4] [5]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Pulse test: tp 10 ms; 10 %.
PBSS304PD_1
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Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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1600 Ptot (mW) 1200
(1)
006aaa270
800
(2) (3)
400
(4)
0 -75
-25
25
75
125 175 Tamb (C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, mounting pad for collector 1 cm2 (4) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3] [4] [1][5]
Min -
Typ -
Max 350 208 167 113 50 45
Unit K/W K/W K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3] [4] [5]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp 10 ms; 10 %.
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1
006aaa271
0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5
006aaa272
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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103 Zth(j-a) (K/W) 102
006aaa273
duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01
10
1 0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 Zth(j-a) (K/W) 102
006aaa751
duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01
10
1 0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter ICBO Conditions Min 155
[1] [1] [1] [1] [1]
Typ 225 200 145 85 45 25 -55 -110 -150 -315 -215 -295 -410 75 -0.78 -0.80 -0.83 -0.92 -0.94 -0.80 13 77 90 210 102 312 110 45
Max -100 -50 -100 -100 -75 -145 -200 -415 -290 -390 -540 100 -0.87 -0.89 -0.91 -0.99 -1.01 -1.00 -
Unit nA A nA nA
collector-base cut-off VCB = -80 V; IE = 0 A current VCB = -80 V; IE = 0 A; Tj = 150 C collector-emitter cut-off current emitter-base cut-off current DC current gain VCE = -64 V; VBE = 0 V VEB = -5 V; IC = 0 A VCE = -2 V; IC = -500 mA VCE = -2 V; IC = -1 A VCE = -2 V; IC = -2 A VCE = -2 V; IC = -3 A VCE = -2 V; IC = -4 A VCE = -2 V; IC = -5 A
ICES IEBO hFE
140 105 60 30 20 -
VCEsat
collector-emitter saturation voltage
IC = -500 mA; IB = -50 mA IC = -1 A; IB = -50 mA IC = -2 A; IB = -200 mA IC = -3 A; IB = -150 mA IC = -3 A; IB = -300 mA IC = -4 A; IB = -400 mA IC = -5 A; IB = -500 mA
[1] [1] [1] [1] [1] [1]
mV mV mV mV mV mV mV m V V V V V V ns ns ns ns ns ns MHz pF
-
RCEsat VBEsat
collector-emitter IC = -2 A; IB = -200 mA saturation resistance base-emitter saturation voltage IC = -500 mA; IB = -50 mA IC = -1 A; IB = -50 mA IC = -1 A; IB = -100 mA IC = -3 A; IB = -150 mA IC = -3 A; IB = -300 mA
[1] [1] [1]
-
VBEon td tr ton ts tf toff fT Cc
[1]
PBSS304PD_1
base-emitter turn-on VCE = -2 V; IC = -2 A voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency VCE = -10 V; IC = -100 mA; f = 100 MHz VCC = -9.2 V; IC = -2 A; IBon = -0.1 A; IBoff = 0.1 A
-
collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz
Pulse test: tp 300 s; 0.02.
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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600 hFE
006aaa735
400
(1)
IB = -340 mA -306 -272 IC -238 (A) -204 -170 -4 -136
-6
006aaa736
-102 -68 -34
(2)
200
(3)
-2
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
0 0
-0.4
-0.8
-1.2
-1.6 -2.0 VCE (V)
VCE = -2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 6. DC current gain as a function of collector current; typical values
-1.2 VBE (V) -0.8
006aaa737
Fig 7. Collector current as a function of collector-emitter voltage; typical values
-1.2 VBEsat (V) -0.8
006aaa738
(1)
(1)
(2)
(2)
-0.4
(3)
-0.4
(3)
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
VCE = -2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 8. Base-emitter voltage as a function of collector current; typical values
Fig 9. Base-emitter saturation voltage as a function of collector current; typical values
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
8 of 15
Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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-1
006aaa739
-1 VCEsat (V) -10-1
(1) (2)
006aaa740
VCEsat (V)
(1) (2) (3)
-10-1
(3)
-10-2
-10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-10-3 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values
103 RCEsat () 102
006aaa741
Fig 11. Collector-emitter saturation voltage as a function of collector current; typical values
104 RCEsat () 103
006aaa742
102 10
(1)
10 1
(2) (1) (2) (3)
1 10-1 10-2 -10-1
(3)
10-1
10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
9 of 15
Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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8. Test information
-I B
90 % input pulse (idealized waveform)
-I Bon (100 %)
10 %
-I Boff
-I C
90 %
output pulse (idealized waveform)
-I C (100 %)
10 % t td t on tr ts t off tf
006aaa266
Fig 14. BISS transistor switching time definition
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mgd624
VCC = -9.2 V; IC = -2 A; IBon = -0.1 A; IBoff = 0.1 A
Fig 15. Test circuit for switching times
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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9. Package outline
3.1 2.7 6 5 4 0.6 0.2
1.1 0.9
3.0 2.5
1.7 1.3
pin 1 index
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 16. Package outline SOT457 (SC-74)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS304PD Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3] For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping
[2] [3]
Packing quantity 3000 -115 -125 10000 -135 -165
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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11. Soldering
3.45 1.95
solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist
1.60 1.70 3.10 3.20
msc422
Dimensions in mm
Fig 17. Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste
MSC423
1.40 4.30
Dimensions in mm
Fig 18. Wave soldering footprint SOT457 (SC-74)
PBSS304PD_1
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Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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12. Revision history
Table 9. Revision history Release date 20060530 Data sheet status Product data sheet Change notice Supersedes Document ID PBSS304PD_1
PBSS304PD_1
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Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PBSS304PD_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 30 May 2006
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Philips Semiconductors
PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
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15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 30 May 2006 Document identifier: PBSS304PD_1

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