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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
Rev. 01 -- 1 April 2010 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NX.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp 1 ms IC = -4 A; IB = -400 mA
[1]
Conditions open base
Min -
Typ 58
Max -30 -4.2 -10 86
Unit V A A m
Pulse test: tp 300 s; 0.02.
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description emitter collector base
3 2 1 3 1
006aaa231
Simplified outline
Graphic symbol
2
3. Ordering information
Table 3. Ordering information Package Name PBSS4032PX SC-62 Description plastic surface-mounted package; 3 leads Version SOT89 Type number
4. Marking
Table 4. Marking codes Marking code[1] *6J Type number PBSS4032PX
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current single pulse; tp 1 ms Conditions open emitter open base open collector Min Max -30 -30 -5 -4.2 -10 -1 Unit V V V A A A
PBSS4032PX_1
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30 V, 4.2 A PNP low VCEsat (BISS) transistor
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation Conditions Tamb 25 C
[1] [2] [3]
Min -55 -65
Max 600 1650 2500 150 +150 +150
Unit mW mW mW C C C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
3.0 Ptot (W) 2.0
006aac174
(1)
(2)
1.0
(3)
0.0 -75
-25
25
75
125 175 Tamb (C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS4032PX_1
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 210 75 50 20
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.1 10 0.02 0.01 1 0 0.05 0.5
006aac175
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032PX_1
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
102 duty cycle = 1 Zth(j-a) (K/W) 10 0.05 0.02 1 0.01 0 0.75 0.5 0.33 0.2 0.1
006aac176
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 6 cm2
Fig 3.
102
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac177
duty cycle = 1 Zth(j-a) (K/W) 10 0.75 0.5 0.33 0.2 0.1 0.05 1 0.02 0
0.01
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032PX_1
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter ICBO Conditions Min [1]
Typ -
Max -100 -50 -100 -100
Unit nA A nA nA
collector-base cut-off VCB = -30 V; IE = 0 A current VCB = -30 V; IE = 0 A; Tj = 150 C collector-emitter cut-off current emitter-base cut-off current DC current gain VCE = -24 V; VBE = 0 V VEB = -5 V; IC = 0 A VCE = -2 V IC = -500 mA IC = -1 A IC = -2 A IC = -4 A
ICES IEBO hFE
200 200 150 60
[1]
350 320 240 100 -110 -160 -200 -230 -270 58 -0.78 -1.02 -0.81 30 60 90 140 80 220 115
-165 -240 -300 -345 -400 86 -0.9 -1.1 -0.9 mV mV mV mV mV m V V V ns ns ns ns ns ns MHz
VCEsat
collector-emitter saturation voltage
IC = -1 A; IB = -50 mA IC = -1 A; IB = -10 mA IC = -2 A; IB = -40 mA IC = -4 A; IB = -400 mA IC = -4 A; IB = -200 mA
[1]
RCEsat VBEsat VBEon td tr ton ts tf toff fT
collector-emitter IC = -4 A; IB = -400 mA saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency VCE = -10 V; IC = -100 mA; f = 100 MHz IC = -1 A; IB = -50 mA IC = -4 A; IB = -400 mA VCE = -2 V; IC = -2 A VCC = -12.5 V; IC = -1 A; IBon = -0.05 A; IBoff = 0.05 A
-
[1] [1] [1]
Cc
[1]
collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz
Pulse test: tp 300 s; 0.02.
-
85
-
pF
PBSS4032PX_1
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
600 hFE
(1)
006aac202
-10.0 IC (A) -8.0
006aac203
IB (mA) = -600 -480 -360 -240
-540 -420 -300 -180
400
(2)
-6.0
-120 -60
-4.0 200
(3)
-2.0
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
0.0 0.0
-1.0
-2.0
-3.0
-4.0 -5.0 VCE (V)
VCE = 2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 5.
DC current gain as a function of collector current; typical values
006aac204
Fig 6.
Collector current as a function of collector-emitter voltage; typical values
006aac205
-1.4 VBE (V) -1.0
(1)
-1.4 VBEsat (V) -1.0
(1)
(2)
(2)
-0.6
(3)
-0.6
(3)
-0.2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-0.2 -10-1
-1
-10
-102
-103 -104 IC (mA)
VCE = 2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 7.
Base-emitter voltage as a function of collector current; typical values
Fig 8.
Base-emitter saturation voltage as a function of collector current; typical values
PBSS4032PX_1
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Product data sheet
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
-1
006aac206
-1
006aac207
VCEsat (V)
VCEsat (V)
-10-1
(1) (2) (3)
-10-1
(1) (2) (3)
-10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 9.
Collector-emitter saturation voltage as a function of collector current; typical values
006aac208
Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values
103 RCEsat () 102
006aac209
103 RCEsat () 102
10
10
1
(1) (2)
1
(1) (2)
10-1
(3)
10-1
(3)
10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values
PBSS4032PX_1
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Product data sheet
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
8. Test information
- IB
90 % input pulse (idealized waveform)
-I Bon (100 %)
10 %
-I Boff
-I C
90 %
output pulse (idealized waveform)
- I C (100 %)
10 % t td t on tr ts t off tf
006aaa266
Fig 13. BISS transistor switching time definition
VBB VCC
RB (probe) oscilloscope 450 VI R1 R2
RC Vo (probe) 450 DUT oscilloscope
mgd624
Fig 14. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
PBSS4032PX_1
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Product data sheet
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
9. Package outline
4.6 4.4 1.8 1.4
1.6 1.4
2.6 2.4
4.25 3.75 1.2 0.8 0.48 0.35 3 0.44 0.23 06-08-29
1 0.53 0.40 1.5 Dimensions in mm
2
3
Fig 15. Package outline SOT89 (SC-62)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 8 mm pitch, 12 mm tape and reel; T1 8 mm pitch, 12 mm tape and reel; T3
[1] [2] [3]
[2] [3]
Packing quantity 3000 10000 -135 -115 -120
PBSS4032PX SOT89
For further information and the availability of packing methods, see Section 14. T1: normal taping T3: 90 rotated taping
PBSS4032PX_1
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30 V, 4.2 A PNP low VCEsat (BISS) transistor
11. Soldering
4.75 2.25 2 1.9 1.2
0.85
0.2
solder lands 1.7 0.5 4.85 solder resist solder paste occupied area
1.2 4.6
1 (3x)
1.1 (2x)
Dimensions in mm
1.5
1.5 0.6 (3x) 0.7 (3x) 3.95
sot089_fr
Fig 16. Reflow soldering footprint SOT89 (SC-62)
6.6 2.4
3.5
solder lands 7.6 0.5 solder resist occupied area 1.8 (2x) Dimensions in mm
preferred transport direction during soldering 1.9 1.5 (2x) 0.7 5.3
sot089_fw
1.9
Fig 17. Wave soldering footprint SOT89 (SC-62)
PBSS4032PX_1
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30 V, 4.2 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history Release date 20100401 Data sheet status Product data sheet Change notice Supersedes Document ID PBSS4032PX_1
PBSS4032PX_1
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Product data sheet
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30 V, 4.2 A PNP low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
PBSS4032PX_1
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS4032PX_1
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Product data sheet
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30 V, 4.2 A PNP low VCEsat (BISS) transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 April 2010 Document identifier: PBSS4032PX_1

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