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Features
* No External Components Except PIN Diode * Supply-voltage Range: 2.7 V to 3.6 V * Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz; * * * * * * *
Adjusted by Zener-diode Fusing Enhanced Bandpass Filter Accuracy of 1.25% ESD: 4 kV HBM, 400 V MM Automatic Sensitivity Adaptation (AGC) Automatic Strong Signal Adaptation (ATC) Enhanced Immunity against Ambient Light Disturbances TTL and CMOS Compatible Suitable Minimum Burst Length 6 or 10 pulses
Applications
* Audio/Video Applications * Home Appliances * Remote Control Equipment
Low-voltage Highly Selective IR Receiver IC T2527
Description
The fully integrated IR receiver IC T2527 is designed to be used in all kinds of unidirectional infrared data transmission systems. It is especially optimized for carrierfrequency modulated transmission applications. Several built-in features enable best transmission quality. The input stage has two functions: first to provide the bias voltage for the PIN diode and secondly to transform the photo current signal into a voltage for further internal processing. This is carried out by a special circuit that is optimized for low-noise applications due to the fact that the incoming current signal is as small as 700 pA. This voltage signal is amplified by a so-called Controlled Gain Amplifier (CGA) followed by a bandpass filter. The filter frequency and therefore the operating carrier frequency are defined by a narrow-tuned bandpass filter. The enhanced bandpass filter tunes the input signal very accurately with a tolerance of 1.25%. The input burst signal is demodulated and converted into a digital envelope output pulse. An integrated dynamic feedback circuit block (which varies the gain as a function of the present environmental conditions such as ambient light, modulated lamps etc.) makes sure that the signal information is evaluated and that unwanted pulses are suppressed at the output pin. The operating supply voltage range for the T2527 is 2.7 V to 3.6 V.
Rev. 4600B-IRDC-12/02
1
Figure 1. Block Diagram
VS
IN Input
CGA & filter
Demodulator
OUT
mC
Oscillator
Carrier frequency f0
AGC / ATC & digital control
T2527
Modulated IR signal min 6 or 10 pulses GND
Pad Layout
Figure 2. Pad Layout 1 (DDW Only)
GND IN
OUT T2527
VS
FUSING
Figure 3. Pad Layout 2 (DDW, SO8 or TSSOP8)
(6) (1) VS T2527 GND (5) IN
(3) OUT
FUSING
2
T2527
4600B-IRDC-12/02
T2527
Pin Configuration
Figure 4. Pinning SO8 and TSSOP8
VS n.c. OUT n.c. 1 2 3 4 8 7 6 5 n.c. n.c. GND IN
Pin Description
Pin 1 2 3 4 5 6 7 8 Symbol VS n.c. OUT n.c. IN GND n.c. n.c. Function Supply voltage Not connected Data output Not connected Input PIN diode Ground Not connected Not connected
Absolute Maximum Ratings
Parameters Supply voltage Supply current Input voltage Input DC current at VS = 3 V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value -0.3 to +4.0 2.0 -0.3 to VS 0.4 -0.3 to VS 10 -25 to +85 -40 to +125 20 Unit V mA V mA V mA C C mW
Thermal Resistance
Parameters Junction ambient SO8 Junction ambient TSSOP8 Symbol RthJA RthJA Value 130 TBD Unit K/W K/W
3
4600B-IRDC-12/02
Electrical Characteristics
Tamb = -20C to +70C, VS = 2.7 V to 3.6 V unless otherwise specified.
No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 3.3 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor (1) Output voltage low Output voltage high Output current clamping Input Input DC current Input DC current; see Figure 6 Min. detection threshold current; see Figure 5 Min. detection threshold current with AC current disturbance IIN_AC100 = 3 A at 100 Hz Max. detection threshold current with VIN > 0V VIN = 0; see Figure 12 VIN = 0; VS = 3 V, Tamb = 25C Test signal: see Figure 11 VS = 3 V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 10; BER = 50 (2) Test signal: see Figure 11 VS = 3 V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, figure 10; BER = 5%(2) 5 5 3 IIN_DCMAX IIN_DCMAX IEemin -150 -350 -700 A A pA C B B R2 = 0; see Figure 12 Tamb = 25C; see Figure 12 R2 = 2.4 kW; see Figure 12 1, 3 3, 6 3, 1 3, 6 RPU VOL VOH IOCL VS0.25 8 30/40 250 Vs kW mV V mA A B B B IIN = 0 1 1 VS IS 2.7 0.7 3.0 0.9 3.6 1.2 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
3.4
3
IEemin
-1500
pA
C
3.5
3
IEemax
-200
A
D
4 4.1 4.2
Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) GVARMAX GVARMIN 51 -5 dB dB D D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information". 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the Pin OUT. 3. After transformation of input current into voltage.
4
T2527
4600B-IRDC-12/02
T2527
Electrical Characteristics (Continued)
Tamb = -20C to +70C, VS = 2.7 V to 3.6 V unless otherwise specified.
No. 4.3 4.4 Parameters Total internal amplification (3) Center frequency fusing accuracy of bandpass Overall accuracy center frequency of bandpass BPF bandwidth VS = 3 V, Tamb = 25C f03V See Figure 7 -3 dB; f0 = 38 kHz; see Figure 9 B 3.8 kHz C -3.5 f0 +2.0 % C Test Conditions Pin Symbol GMAX f03V_FUSE -1.25 Min. Typ. 71 f0 +1.25 Max. Unit dB % Type* D A
4.5
4.6
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information". 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the Pin OUT. 3. After transformation of input current into voltage.
ESD
All pins: 2000 V HBM; 200 V MM, MIL-STD-883C, Method 3015.7
Typical Electrical Curves at Tamb = 25C
Figure 5. IEemin versus IIN_DC , VS = 3 V
100.0
VS = 3 V f = f0
I Eemin ( nA )
10.0
1.0
0.1 0.1
1.0
10.0
100.0
1000.0
I IN_DC ( A )
5
4600B-IRDC-12/02
Figure 6. VIN versus IIN_DC, VS = 3 V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 1.0 10.0 100.0 1000.0
VS = 3 V f = f0
V IN ( V )
I
IN_DC
( A )
Figure 7. Overall Tolerance of Bandpass Inclusive Fusing
2.0 1.5 1.0 0.5 0.0 -0.5
Typical
( bits/s )
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -20 -10 0 10 20 30 40 50 60 70
f 0 ( kHz )
Figure 8. Data Transmission Rate, VS = 3 V
5000 4500 4000 3500
Short burst VS = 3 V
3000
( bits/s )
2500
Standard type
2000 1500
Lamp type
1000 500 0 25.0
35.0
45.0
55.0
65.0
75.0
85.0
f 0 ( kHz )
6
T2527
4600B-IRDC-12/02
T2527
Figure 9. Typical Bandpass Curve
1.10
VS = 3 V
1.00 0.90 0.80 Bandwidth (-3dB) 0.70 0.60 0.50 0.40 0.92
Relative amplitude
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f / f0
f1 = 0.96 (at -3 dB) f2 = f/f0 f3 = 1.047 (at -3 dB) B = bandwidth (-3 dB) Q = f2 / B Example: Q = 1/ (1.047 - 0.960) = 11.5
Figure 10. Illustration of Used Terms Example: f = 30 kHz, burst with 16 pulses, 16 periods
1066 ms IN 1 533 ms 7 16 Period (P = 16)
Burst (N = 16 pulses) 7 7
OUT
t DON
t DOFF Envelope 1
33 ms
533 ms Envelope 16
17056 ms / data word OUT Data word 17 ms TREF = 62 ms Telegram pause Data word
7
4600B-IRDC-12/02
Figure 11. Test Circuit
I Ee = DU1/400k DU1 I Ee 1nF 400k I IN_ DC VDD = 3 V
R1 = 220
20k I IN_AC100 I IN V PULSE 1nF DU2 IN
VS
T2527
GND
OUT
20k f0 16 DC + t PER = 10ms
I IN_ DC = DU2 / 40k
C1 4.7mF
Figure 12. Application Circuit
VDD = 3 V *) optional
R1 = 220
R2* > 2,4k
IS VS
RPU
I OCL IN I IN
T2527
GND
OUT
mC
C1 4.7mF
V IN
VO
C2* = 470pF I IN_ DC I Ee
8
T2527
4600B-IRDC-12/02
T2527
Chip Dimensions
Figure 13. Chip Size in mm (1)
1210, 1040 GND 336, 906 IN 783, 887
Scribe
VS
Length
55, 652
T2527
55, 62 OUT 0, 0
FUSING
Width
Note:
1. Pad coordinates are given for lower left corner of the pad in m from the origin 0,0
Dimensions
Length incl. scribe Width incl. scribe Thickness Pads Fusing pads
1.16 mm 1.37 mm 290 5% 90 x 90 70 x 70
Pad metallurgy
AlSiTi
Finish
Si3N4 thickness 1.05 m
9
4600B-IRDC-12/02
Ordering Information
Delivery: unsawn wafers (DDW) in box, SO8 (150 mil) and TSSOP8 (3 mm body).
Extended Type Number T2527N0xx -yyy
(1) (5)
PL(2) 2 1 2 1 2 1
RPU(3) 30 30 40 40 30 30
D(4) 2000 2000 1333 1333 3060 3060
Type Standard type: 10 pulses, enhanced sensibility, high data rate Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: 6 pulses, enhanced data rate
T2527N1xx(1)-DDW T2527N2xx(1)-yyy(5) T2527N3xx -DDW T2527N6xx(1)-yyy(5) T2527N7xx(1)-DDW Note:
(1)
1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request). 2. 3. 4. 5. Two pad layout versions (see Figure 2 and Figure 3) available for different assembly demand. Integrated pull-up resistor at PIN OUT (see electrical characteristics). Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 3 V (see Figure 8). yyy means kind of packaging: DDW -> unsawn wafers in box. .................... .......DDW -> unsawn wafers in box .................... .......6AQ -> (only on request, TSSOP8 taped and reeled)
10
T2527
4600B-IRDC-12/02
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4600B-IRDC-12/02 xM

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