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| VISHAY 1N5550 to 1N5552 Vishay Semiconductors Standard Sinterglass Diode \ Features * Cavity-free glass passivated junction * High temperature metallurgically bonded construction * Hermetically sealed package * Medium switching for improved efficiency Mechanical Data Case: Sintered glass case, G4 Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 1040 mg 17133 Parts Table Part 1N5550 1N5551 1N5552 VRRM = 200 V VRRM = 400 V VRRM = 600 V Type differentiation G4 G4 G4 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics Maximum average forward rectified current Peak forward surge current Operating and storage temperature range 0.375 " (9.5 mm) lead length at Tamb = 55 C 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Part 1N5550 1N5551 1N5552 Symbol VR = VRRM VR = VRRM VR = VRRM IF(AV) IFSM TJ, TSTG Value 200 400 600 3.0 100 - 55 to + 175 Unit V V V A A C Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Typical thermal resistance 1) Symbol RJA RJL Value 22 12 Unit K/W K/W Document Number 86080 Rev. 2, 28-Jan-03 www.vishay.com 1 1N5550 to 1N5552 Vishay Semiconductors 1) VISHAY Thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5mm) lead length, with both leads mounted between heat sinks. Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Minimum reverse breakdown voltage Test condition IR = 50 A IR = 50 A IR = 50 A Maximum instantaneous forward voltage Maximum reverse current Maximum junction capacitance IF = 9.0 A VR = VRRM, Tamb = 25 C VR = VRRM, Tamb = 100 C VR = 12 V, f = 1 MHz VR = 12 V, f = 1 MHz VR = 12 V, f = 1 MHz Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 1N5550 1N5551 1N5552 Part 1N5550 1N5551 1N5552 Symbol V(BR) V(BR) V(BR) VF IR IR CJ CJ CJ trr Min 240 460 660 1.2 1.0 25 150 120 100 2.0 Max Unit V V V V A A pF pF pF s Typical Characteristics (Tamb = 25 C unless otherwise specified) Instantaneous Forward Surge Current (A) 5.0 TL , Lead Temperature L = 0.375" (9.5mm) 200 TJ = TJmax 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Current (A) 4.0 100 3.0 0.8 x 0.8 x .040" (20 x 20 x 1mm) Copper Heatsinks 2.0 TA, Ambient Temperature 0.375" (9.5mm) Lead Length P.C.B. Mounting 1.0 Resistive or Inductive Load 0 0 25 50 75 100 125 150 175 200 10 1 g1N5550_02 10 100 g1N5550_01 Temperature (C) Number of Cycles at 60 HZ Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 Document Number 86080 Rev. 2, 28-Jan-03 VISHAY 1N5550 to 1N5552 Vishay Semiconductors 50 Instantaneous Forward Current (A) 10 TJ = 150C Pulse Width = 300s 1% Duty Cycle 1 TJ = 25C 0.1 0.01 0.2 g1N5550_03 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 20 Instantaneous Reverse Current (A) 10 TJ = 125C 1 TJ = 75C 0.1 TJ = 25C 0.01 0 20 40 60 80 100 g1N5550_04 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics 100 TJ = 25C f = 1.0MHZ Vsig = 50mVp-p Junction Capacitance (pF) 10 1 g1N5550_05 1 0 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number 86080 Rev. 2, 28-Jan-03 www.vishay.com 3 1N5550 to 1N5552 Vishay Semiconductors Package Dimensions in Inches (mm) VISHAY 0.180 (4.6) 0.115 (2.9) DIA. 1.0 (25.4) MIN. 0.300 (7.6) MAX. 0.042 (1.07) 0.038 (0.962) DIA. 17032 1.0 (25.4) MIN. www.vishay.com 4 Document Number 86080 Rev. 2, 28-Jan-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1N5550 to 1N5552 Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86080 Rev. 2, 28-Jan-03 www.vishay.com 5 |
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