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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2515DF
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DESCRIPTION *With TO-3PFa package *High voltage;high speed *Built-in damper diode APPLICATIONS *For use in horizontal deflection circuits of PC monitors.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 9 20 5 7.5 45 150 -55~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
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BU2515DF
SYMBOL
TYP.
MAX
UNIT
V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF
Emitter-base breakdown voltage
IB=600mA ;IC=0 IC=4.5A ;IB=0.9A IC=4.5A ;IB=0.9A VCE=BVCES; VBE=0 Tj=125 VEB=6V; IC=0 IC=1.0A ; VCE=5V IC=4.5A ; VCE=5V IF=4.5A
7.5
13.5
V
Collector-emitter saturation voltage
5.0
V
Base-emitter saturation voltage
1.0 1.0 2.0 130
V
Collector cut-off current
mA
Emitter cut-off current
mA
DC current gain
13
DC current gain
5
8
10.2
Diode forward voltage
2.2
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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BU2515DF
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3


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