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| TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number TP0610L TP0610T VP0610L VP0610T BS250 V(BR)DSS Min (V) -60 -60 -60 -60 -45 rDS(on) Max (W) 10 @ VGS = -10 V 10 @ VGS = -10 V 10 @ VGS = -10 V 10 @ VGS = -10 V 14 @ VGS = -10 V VGS(th) (V) -1 to -2.4 -1 to -2.4 -1 to -3.5 -1 to -3.5 -1 to -3.5 ID (A) -0.18 -0.12 -0.18 -0.12 -0.18 FEATURES D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: -1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S G 1 Device Marking Front View TP0610L "S" TP 0610L xxll TO-92-18RM (TO-18 Lead Form) D G 1 Device Marking Front View BS250 2 "S" BS 250 xxll "S" = Siliconix Logo xxll = Date Code G 1 3 S 2 D TO-236 (SOT-23) Marking Code: TP0610T: TOwll VP0610T: VOwll w = Week Code lL = Lot Traceability Top View TP0610T VP0610T 2 D 3 Top View TP0610L VP0610L VP0610L "S" VP 0610L xxll S 3 Top View BS250 "S" = Siliconix Logo xxll = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70209 S-41260--Rev. H, 05-Jul-04 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TP0610L -60 "30 -0.18 -0.11 -0.8 0.8 0.32 156 TP0610T -60 "30 -0.12 -0.07 -0.4 0.36 0.14 350 VP0610L -60 "30 -0.18 -0.11 -0.8 0.8 0.32 156 -55 to 150 VP0610T -60 "30 -0.12 -0.07 -0.4 0.36 0.14 350 BS250 -45 "25 -0.18 Unit V A 0.83 150 W _C/W _C 1 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TP0610L/T VP0610L/T BS250 Parameter Static Drain Source Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)DSS VGS(th) VGS = 0 V, ID = -10 mA VGS = 0 V, ID = -100 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "20 V -70 -60 -60 -45 V -3.5 -1.9 -1 -2.4 "10 "50 -1 -3.5 "10 -1 Gate-Body Leakage y g IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C VDS = 0 V, VGS = "15 V VDS = -48 V, VGS = 0 V nA "20 -1 -200 -0.5 m mA -1 -200 Zero G Gate Voltage Drain Current IDSS VDS = -48 V, VGS = 0 V, TJ = 125_C VDS = -25 V, VGS = 0 V VDS = -10 V, VGS = -4.5 V -180 L Suffix T Suffix 11 L Suffix L Suffix T Suffix L Suffix T Suffix 8 15 6.5 20 90 -1.1 80 60 -750 -50 On-State Drain OS Currentb ID(on) VDS = -10 V VGS = -10 V 10 V, 10 VGS = -4.5 V, ID = -25 mA -600 -220 25 10 20 10 10 20 10 14 mA Drain-Source On-Resistanceb rDS( ) DS(on) VGS = -10 V, ID = -0.5 A VGS = -10 V, ID = -0.5 A, TJ = 125_C VGS = -10 V, ID = -0.2 A VDS = -10 V, ID = -0.5 A VDS = -10 V, ID = -0.1 A IS = -0.5 A, VGS = 0 V W Forward Transconductanceb Diode Forward Voltage gf fs VSD 70 mS V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = -25 V, VGS = 0 V f = 1 MHz 15 10 3 60 25 5 60 25 5 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = -25 V, RL = 133 W 25 ID ^ -0.18 A, VGEN = -10 V, Rg = 25 W 8 8 10 10 ns Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VPDS06 www.vishay.com 2 Document Number: 70209 S-41260--Rev. H, 05-Jul-04 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 V 7V 0.8 I D - Drain Current (A) I D - Drain Current (mA) 8V 900 25_C 600 125_C 1200 TJ = -55_C Transfer Characteristics 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 300 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) 40 VGS = 0 V On-Resistance vs. Drain Current 20 Capacitance r DS(on) - On-Resistance ( W ) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 ID - Drain Current (mA) 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 15 V GS - Gate-to-Source Voltage (V) ID = 500 mA 12 Gate Charge 1.8 1.5 VDS = 30 V rDS(on) - On-Resiistance (Normalized) VDS = 48 V 1.2 0.9 0.6 0.3 0.0 -50 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA 9 VGS = 4.5 V @ 25 mA 6 3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70209 S-41260--Rev. H, 05-Jul-04 www.vishay.com 3 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 VGS = 0 V r DS(on) - On-Resistance ( W ) 8 ID = 500 mA 10 On-Resistance vs. Gate-Source Voltage I S - Source Current (A) 100 TJ = 125_C 6 4 10 TJ = 25_C TJ = -55_C ID = 200 mA 2 1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.5 0.4 V GS(th) Variance (V) 0.3 Power (W) 0.2 0.1 -0.0 -0.1 -0.2 -0.3 -50 0.5 0 -25 0 25 50 75 100 125 150 0.01 2 1.5 ID = 250 mA 3 2.5 Single Pulse Power, Junction-to-Ambient 1 TA = 25_C 0.1 1 Time (sec) 10 100 600 TJ - Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 70209 S-41260--Rev. H, 05-Jul-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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