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| GOLDMOS (R) PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz * Guaranteed Performance at 1.99 GHz, 26 VDS - Output Power = 12 Watts Min - Power Gain = 10 dB Min Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Description The PTF 10041 is a 12-watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * * * * Typical Output Power vs. Input Power 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 V DD = 26 V IDQ = 125 mA f = 1990 MHz Output Power (Watts) PT F10 041 Input Power (Watts) Package 20249 RF Specifications Characteristic (Guaranteed) Symbol Gps P-1dB h Y Min 10 12 38 -- Typ -- -- -- -- Max -- -- -- 10:1 Units dB Watts % -- Gain (VDD = 26 V, POUT = 3 W, IDQ = 125 mA, f = 1930, 1990 MHz) Output Power at 1 dB Compression (VDD = 26 V, IDQ = 125 mA, f = 1990 MHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 125 mA, f = 1990 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 125 mA, f = 1990 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. e 1 PTF 10041 Electrical Characteristics (Guaranteed) Characteristic Conditions Symbol BVDSS IDSS VGS(on) e Min 65 -- 3.0 Typ -- -- -- Max -- 1.0 5.0 Units Volts A Volts Drain-Source Breakdown Voltage VGS = 0 V, ID = 1.8 mA Drain-Source Leakage Current Gate On Voltage VDS = 28 V, VGS = 0 V VDS = 26 V, ID = 125 mA Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 58 0.33 150 3.0 Unit Vdc Vdc C Watts W/C C C/W Typical Performance P OUT, Gain & Efficiency (at P-1dB) vs. Frequency Gain (dB) & Output Power (W) 16 15 14 13 12 11 10 Gain V DD = 26 V IDQ = 125 mA Efficiency P AQrA Broadband Test Fixture Performance Efficiency (%) Return Loss (dB) 12 Gain 60 50 40 65 60 55 50 45 40 35 Efficiency (%)x 9 Gain (dB)x Efficiency 6 V DD = 26 V IDQ = 125 mA POUT = 10 W 30 -5 20 -10 -15 10 -20 -25 0 3 Return Loss 0 1925 1950 1975 9 30 1750 1800 1850 1900 1950 2000 2050 2000 Frequency (MHz) Frequency (MHz) 2 e Typical Performance (cont.) Power Gain vs. Output Pow er 13 18 11 10 9 8 7 6 0 1 10 100 IDQ = 35 mA V DD = 26 V f = 1990 MHz IDQ = 125 mA IDQ = 70 mA PTF 10041 Output Power vs. Supply Voltage Output Power (Watts) 12 Power Gain (dB) x 16 14 IDQ = 125 mA f = 1990 MHz 12 10 22 24 26 28 30 Output Power (Watts) Supply Voltage (Volts) 3rd Order IMD vs. Output Pow er -20 50 40 30 Capacitance vs. Supply Voltage 3 Cgs V GS = 0 V f = 1 MHz 2.5 2 1.5 20 10 Cdg 0 0 10 20 30 40 Cds 1 0.5 0 Cds and Cgs (pF) x -30 IMD (dBc) x -40 -50 V DD = 26 V, IDQ = 125 mA f 1 = 1990.0 MHz, f 2 = 1990.1 MHz 0 2 4 6 8 10 12 -60 Output Power (Watts-PEP) Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 1.02 Voltage nomalized to 1.0 V Series show current (A) Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 -20 0.075 0.5 0.925 0 20 0.2875 0.7125 1.1375 40 60 80 100 Temp. (C) 3 Cdg (pF)x PTF 10041 Impedance Data VDD = 26 V, POUT = 12 W, IDQ = 125 mA D e Z0 = 50 W Z Source Z Load G S Frequency MHz 1750 1800 1850 1900 1950 2000 2050 R Z Source W jX -3.2 -3.0 -3.5 -3.8 -4.2 -4.8 -5.2 R 3.9 4.2 3.5 2.7 3.2 3.1 2.7 2.80 3.10 2.50 2.55 2.60 2.50 2.60 Z Load W jX -0.4 -1.1 -1.5 -1.4 -0.9 -1.8 -1.8 Typical Scattering Parameters (VDS = 26 V, ID = 500 mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.820 0.814 0.865 0.892 0.913 0.927 0.938 0.945 0.954 0.960 0.970 0.974 0.977 0.977 0.977 0.978 0.983 0.987 0.991 0.994 0.992 0.991 S21 Ang -115 -126 -147 -156 -161 -165 -168 -171 -173 -175 -177 -179 180 178 177 176 174 173 172 171 169 168 S12 Ang 105 98 71 57 46 37 29 23 17 12 8 3 -1 -5 -9 -13 -16 -20 -23 -27 -31 -35 4 S22 Ang 14 6 -11 -20 -26 -29 -25 -13 7 36 55 67 72 75 76 78 80 79 78 77 76 74 Mag 27.4 22.3 12.9 8.73 6.34 4.79 3.70 2.92 2.36 1.94 1.62 1.38 1.18 1.02 0.894 0.788 0.702 0.631 0.571 0.520 0.477 0.440 Mag 0.012 0.012 0.012 0.010 0.008 0.007 0.005 0.003 0.003 0.003 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0.013 0.014 Mag 0.584 0.583 0.653 0.730 0.791 0.851 0.887 0.895 0.908 0.914 0.933 0.944 0.953 0.959 0.963 0.964 0.970 0.973 0.976 0.978 0.978 0.980 Ang -80 -90 -112 -124 -132 -139 -146 -152 -156 -159 -161 -164 -166 -169 -171 -173 -174 -176 -178 -179 179 178 e Test Circuit PTF 10041 Block Diagram for f = 2 GHz DUT l1 l2 l3 l4 l5 l6 l7 PTF 10041 0.141 l 2 GHz 0.082 l 2 GHz 0.041 l 2 GHz 0.130 l 2 GHz 0.169 l 2 GHz 0.141 l 2 GHz 0.269 l 2 GHz LDMOS Transistor Microstrip 51.1 W Microstrip 51.1 W Microstrip 51.1 W Microstrip 8.77 W Microstrip 8.77 W Microstrip 51.1 W Microstrip 51.1 W C1,C7 C2,C8 C3,C6, C9, C10 C4 C5 C11 C12 J1,J2 L1, L2 L3 R1, R2 R3 Circuit Board 10uF, 35 V Capacitor, Digi-Key PCS6106 0.1uF, 50 V Capacitor, Digi-Key PCC 103 BCT 10 pF Capacitor, 100 B 100 1.0 pF Capacitor, 100 B 1R0 1.4 pF Capacitor, 100 B 1R4 0.9 pF Capacitor, 100 B 0R9 1.5 pF Capacitor, 100 B 1R5 Connector, SMA, Female, Panel Mount 4 Turns, 20 AWG, .120 DIA I.D. Ferrite, 6mm Phillips 53/3/4.6-452 Resistor, 220ohmDigi-Key 220ZTR Resistor, 1ohm, Leaded Digi-Key 1.0QBK .031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper Assembly Diagram (not to scale) 5 PTF 10041 Test Circuit (cont.) e Artwork (not to scale) Case Outline Specifications Case 20249 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) Ericsson Inc. 1997-2002 - All Rights Reserved EUS/KR 1522-PTF 10041 Uen Rev. C 04-29-02 6 |
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