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| SDH03 Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg NPN 100 100 6 1.5 PNP + NPN Darlington H-bridge (Ta=25C) External dimensions E *** SD Specification PNP -60 -60 -6 -1.5 -2.5 (PW1ms, Du10%) -0.1 3 (Ta=25C) 150 -40 to +150 41.6 Unit V V V A A A W C C C/W 2.5 (PW1ms, Du100%) 0.1 j-a sEquivalent circuit diagram 2 R3 R4 1 15 16 13 14 3 R1 R2 4 8 11 12 9 10 7 6 5 R3: 4k typ R4: 100 typ R1: 4k typ R2: 200 typ Characteristic curves IC-VCE Characteristics (Typical) NPN 2.5 IB=10mA 4m A IC-VBE Temperature Characteristics (Typical) PNP NPN 2.5 IB=-5m -2m -2.5 A 0.6m (VCE=4V) A 2m A 1.2 mA -1.2mA -1.0mA A 2.0 0.4m A -2.0 2.0 -0.8mA 0.3mA IC (A) 1.5 -1.5 -0.6mA -0.5mA 1.5 IC (A) 0.5 -0.5 -0.3mA 0.5 0 1 2 3 4 5 6 0 0 -1 -2 -3 -4 -5 -6 0 0 1 Ta= 125 C 75C 25C -30C 1.0 -1.0 -0.4mA IC (A) 1.0 2 3 VCE (V) VCE (V) VBE (V) hFE-IC Characteristics (Typical) NPN 10000 (VCE=4V) typ PNP 10000 5000 (VCE=-4V) PNP -2.5 (VCE=-4V) 5000 Typ -2.0 1000 -1.5 IC (A) hFE hFE 1000 500 -1.0 500 Ta=125C 75C 25C -30C 100 50 100 0.03 0.05 0.1 0.5 1 2.5 -0.5 30 -0.03 -0.05 -0.1 -0.5 -1 -2.5 0 0 -1 -2 -3 IC (A) IC (A) VBE (V) hFE-IC Temperature Characteristics (Typical) NPN 10000 5000 2 =1 5 C C 5 PNP (VCE=4V) 10000 5000 (VCE=-4V) Ta 7 25 C C 0 -3 1000 1000 500 500 C 25 =1 5C 7 C Ta 25 C 0 -3 hFE hFE 100 100 0.03 0.05 0.1 0.5 1 2.5 50 -0.03 -0.05 -0.1 -0.5 -1 -2.5 IC (A) IC (A) 168 SDH03 Electrical characteristics NPN Symbol min ICBO IEBO VCEO hFE VCE(sat) VBE(sat) 100 2000 12000 1.3 2.2 V V Specification typ max 10 3 Unit Conditions VCB=100V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA -60 2000 12000 -1.4 -2.2 V V Specification min typ max -10 -3 PNP Unit Conditions VCB=-60V VEB=-6V IC=-10mA VCE=-4V, IC=-1A IC=-1A, IB=-2mA (Ta=25C) A mA V A mA V Characteristic curves VCE(sat)-IB Characteristics (Typical) NPN 3 -3 j-a-PW Characteristics PNP 50 NPN VCE (sat) (V) VCE (sat) (V) j-a (C / W) 2 -2 IC=-2A 10 IC=2A IC=1A IC=0.5A IC=-1A 5 1 -1 IC=-0.5A 0 0.1 0.5 1 5 10 50 100 0 -0.1 -0.5 -1 -5 -10 -50 1 1 5 10 50 100 500 1000 IB (mA) IB (mA) PW (mS) VCE(sat)-IC Temperature Characteristics (Typical) NPN 3 (IC / IB=1000) PNP -3 (IC / IB=1000) PNP 50 VCE (sat) (V) j-a (C / W) 2 VCE (sat) (V) -2 10 Ta=-30 C 5 1 25C -30C -1 Ta=125C 75C 75C 25C 125C 0 0.2 0.5 1 2.5 0 -0.2 -0.5 -1 -2.5 1 1 5 10 50 100 500 1000 IC (A) IC (A) PW (mS) Safe Operating Area (SOA) NPN 5 0 10 s PT-Ta Characteristics PNP 3 4 3 -5 2 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 10 0 s 1m 1m 1 10 m s s -1 2 IC (A) 0.5 -0.5 PT (W) 1 0 0 IC (A) s 10 m s 1 0.1 Single Pulse 0.05 Without Heatsink 0.03 Ta=25C 3 5 10 50 100 Single Pulse -0.1 Without Heatsink Ta=25C -0.05 -3 -5 -10 -50 -100 50 100 150 VCE (V) VCE (V) Ta (C) 169 |
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