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1N5614GP thru 1N5622GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Medium-Switching Junction Rectifiers 0.034 (0.86) 0.028 (0.71) Dia. DO-204AC (DO-15) 1.0 (25.4) min. (R) ted* ten Pa Features Reverse Voltage 200 to 1000V Forward Current 1.0A 0.300 (7.6) 0.230 (5.8) * Epoxy has UL Flammability Classification 94V-0 * High temperature metallurgically bonded construction * 1.0 ampere operation at TA=55C with no thermal runaway * Typical IR less than 0.1A * Cavity-free, glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 0.140 (3.6) 0.104 (2.6) Dia. Mechanical Data Case: JEDEC DO-204AC, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 oz., 0.4 g Ratings at 25C ambient temperature unless otherwise specified. 1.0 (25.4) min. Dimensions in inches and (millimeters) * Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Parameter * Maximum repetitive peak reverse voltage Maximum RMS voltage * Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 55C * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) * Operating junction temperature range * Storage temperature range VRRM VRMS VDC IF(AV) IFSM RJA TJ TSTG 200 140 200 Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP 400 280 400 600 420 600 1.0 50 45 -65 to +175 -65 to +175 800 560 800 1000 700 1000 Unit V V V A A C/W C C Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. * Minimum reverse breakdown voltage at 50A * Maximum instantaneous forward voltage at 1.0A * Maximum DC reverse current at rated DC blocking voltage * Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum junction capacitance at 12V, 1MHz TA = 25C TA = 100C TA = 200C VBR VF IR 220 440 660 1.2 0.5 25 1500 2.0 880 1100 V V A s trr CJ 45 35 25 20 15 pF Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted *JEDEC registered values Document Number 88520 11-Feb-02 www.vishay.com 1 1N5614GP thru 1N5622GP Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Average Forward Rectified Current (A) Fig. 1 - Forward Current Derating Curve 1.0 50 Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC method) 0.75 60 Hz Resistive or Inductive Load 0.375" (9.5mm) Lead length 40 30 0.5 20 0.25 10 0 25 0 50 75 100 125 150 175 1 10 100 Ambient Temperature (C) Number of Cycles at 60 Hz Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Current (A) Instantaneous Forward Current (A) 10 10 Fig. 4 - Typical Reverse Characteristics TJ = 150C 1 TJ = 25C TJ = 125C 1 0.1 Pulse Width = 300s 1% Duty Cycle 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 TJ = 75C TJ = 25C 0.01 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 30 Junction Capacitance (pF) TJ = 25C f = 1.0 MHz Vsig = 50m Vp-p 10 1 1 10 100 Reverse Voltage (V) www.vishay.com 2 Document Number 88520 11-Feb-02 |
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