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AH114 Product Features * 60 - 2500 MHz * +24 dBm P1dB * +41 dBm Output IP3 * 19 dB Gain @ 900 MHz * 14.5 dB Gain @ 1900 MHz * Single Positive Supply (+5V) * SOT-89 SMT Package The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier Product Description The AH114 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power. It is housed in an industry standard SOT-89 SMT package. All devices are 100% RF and DC tested. Functional Diagram 4 1 2 3 Pin No. 1 3 2, 4 Applications * * * * Final stage amplifiers for Repeaters Mobile Infrastructure CATV / DBS Defense / Homeland Security The AH114 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH114 to maintain high linearity over temperature and operate directly off a single +5 V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Function Input / Base Output / Collector Ground Specifications Parameters Frequency Range S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR Typical Performance Units MHz dB dB dB dBm dBm dBm dB mA V 135 Min 60 13.5 Typ 1900 14.5 -10 -14 +23 +41 +17 5.0 150 +5 Max 2500 Parameters Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Supply Bias Units MHz dB dB dB dBm dBm dB Typical 900 1900 2140 19 14.5 14 -14 -10 -25 -10 -14 -20 +24 +23 +23 +40 +41 +40 5.0 5.0 6.0 +5 V @ 150 mA Noise Figure Operating Current Range Device Voltage 165 Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I = 150 mA, +25 C Test conditions unless otherwise noted. 1. T = 25C, Vsupply = +5 V, Frequency = 1900 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameters Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Ordering Information Part No. AH114-89 AH114-89PCB900 AH114-89PCB1900 AH114-89PCB2140 Rating -40 to +85 C -65 to +150 C +12 dBm +6 V 220 mA Description 1/4 Watt, High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com December 2003 AH114 30 The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25C, unmatched 50 ohm system) 1.0 6 0. 2. 0 0 3. 0 4. 5.0 Gain (dB) 10.0 10.0 5 0 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3 .4 -0 .4 -0 -0. 6 .0 -2 -0. 6 -0.8 Sw p Min 0.05GH z -0.8 .0 -2 Sw p Min 0.05GH z -1.0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments. S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -3.61 -3.31 -2.62 -2.62 -2.54 -2.39 -2.27 -2.21 -2.16 -2.05 -1.99 -1.84 -1.68 -1.46 -1.33 -1.20 -1.17 -169.14 -173.35 179.12 173.23 168.30 163.31 158.06 152.89 147.55 142.54 137.85 133.47 129.41 125.20 120.48 115.03 109.05 23.08 21.93 19.02 17.74 16.69 15.62 14.57 13.55 12.54 11.65 10.70 9.91 9.13 8.46 7.85 7.22 6.62 149.67 148.90 146.43 136.11 123.77 111.53 101.13 91.40 82.69 74.35 66.99 59.96 53.84 47.68 41.30 34.74 27.78 -30.46 -29.57 -27.97 -27.96 -27.96 -27.96 -26.02 -26.02 -26.02 -26.02 -25.08 -24.44 -24.44 -24.44 -23.27 -23.10 -23.10 17.14 14.05 9.40 10.86 10.86 10.62 9.88 8.87 7.57 5.95 4.22 2.37 0.24 -2.39 -5.53 -9.13 -12.86 -7.74 -7.80 -6.40 -6.33 -6.09 -5.86 -5.68 -5.58 -5.37 -5.20 -5.20 -5.05 -5.01 -4.89 -4.88 -4.73 -4.66 -1.0 -128.38 -143.29 -169.43 -179.95 173.78 168.37 163.12 157.73 152.46 147.09 141.71 136.43 131.29 126.16 121.19 116.28 111.40 Application Circuit PC Board Layout Circuit Board Material: .014" Getek, 4 layers (other layers added for rigidity), .062" total thickness, 1 oz copper Microstrip line details: width = .026", spacing = .026" Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com December 2003 -4. 0 -5. 0 -3 .0 -4. 0 -5. 0 2 -0. 2 -0. -10.0 -10.0 10 10.0 15 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0.2 -3 .0 0.2 20 0. 4 0. 4 25 2. 0 DB(|S[2,1]|) * DB(GMax) * 6 0. Sw p Max 3.075GH z 1.0 Gain / Maximum Stable Gain 0.8 S11 0.8 S22 Sw p Max 3.075GH z 0 3. 0 4. 5.0 10.0 AH114 Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (AH114-89PCB900) Typical RF Performance 900 MHz 19 dB -14 dB -10 dB +40 dBm +24 dBm 5.0 dB +5 V 150 mA All passiv e components are of size 0603 unless otherwise noted. Vcc = +5 V CAP ID=C3 C=1e5 pF size 1206 CAP ID=C2 C=1000 pF size 0805 RES ID=L2 R=2700 Ohm DIODE1 ID= D1 5.6 V CAP ID=C1 C=56 pF Output P1dB Noise Figure Supply Voltage Supply Current P ORT P=1 Z=50 Ohm CAP ID=C4 C=56 pF RES I D=L3 R=0 Ohm IND I D= L1 L=3 3 nH CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm CAP ID=C12 C=5.6 pF SUBCKT ID=U1 NET="AH114" C12 should be placed at the silk screen marker "F" on the W J evaluation board. The capacitor s hould be placed 14 @ 0.9GHz from pin 1 of the AH114. CAP ID=C13 C=1 pF C13 should be placed at the silk screen marker "8" on the W J evaluation board. The capacitor s hould be placed 19 @ 0.9GHz from pin 3 of the AH114. Measured parameters were taken at 25 C. Application Circuit: 900 MHz 20 15 10 ACPR IS-95A vs. Channel Power IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset -40 freq = 0.9 GHz ACPR (dBc) Magnitude (dB) 5 0 -5 -10 -15 -20 0.7 DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) * -50 -60 -70 0.8 0.9 Frequency (GHz) 1 1.1 13 14 15 16 17 18 Output Channel Power (dBm) 1900 MHz Application Circuit (AH114-89PCB1900) Typical RF Performance Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Vcc = +5 V All passive com ponents are of size 0603 unless otherwise noted. 1900 MHz 14.5 dB -10 dB -14 dB +41 dBm +23 dBm 5.0 dB +5 V 150 mA CAP ID=C3 C=1e5 pF size 1206 CAP ID=C2 C=1000 pF size 0805 RES ID=L2 R=2700 Ohm CAP ID=C4 C=56 pF IND ID=L3 L=2.7 nH DIODE1 ID=D1 5.6 V CAP ID=C1 C=56 pF Output P1dB Noise Figure Supply Voltage Supply Current PORT P=1 Z=50 Ohm IND ID=L1 L=18 nH CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm CAP ID=C7 C=2.4 pF C7 should be placed at the silk s creen marker "A" on the W J evaluation board. The capacitor should be placed 5 @ 1.9GHz from pin 1 of the AH114. SUBCKT ID=U1 NET="AH114" CAP ID=C13 C=1.2 pF C13 should be placed at the silk screen m arker "7" on the W J evaluation board. The capacitor should be placed 34 @ 1.9GHz from pin 3 of the AH114. Measured parameters were taken at 25 C. Application Circuit: 1900 MHz 20 15 10 ACPR IS-95A vs. Channel Power IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset -40 freq = 1.9 GHz ACPR (dBc) Magnitude (dB) 5 0 -5 -10 -15 -20 1.6 DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) * -50 -60 -70 1.7 1.8 1.9 Frequency (GHz) 2 2.1 13 14 15 16 17 18 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com December 2003 AH114 Typical RF Performance Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit (AH114-89PCB2140) Vcc = +5 V All passive components are of size 0603 unless otherwise noted. 2140 MHz 14 dB -25 dB -20 dB +23 dBm +40 dBm 6.0 dB +5 V 150 mA CAP ID=C3 C=100000 pF size 1206 CAP ID=C2 C=1000 pF size 0805 RES ID=L2 R=2700 Ohm C6 should be placed 19. 5 @ 2.14GHz from pin 1 of the AH114. CAP CAP ID=C4 ID=C6 C=56 pF C=1.5 pF DIODE1 ID=D1 5.6 V CAP ID=C1 C=56 pF PORT P=1 Z =50 Ohm IND ID=L1 L=18 nH CAP ID=C5 C=56 pF Output P1dB Noise Figure Supply Voltage Supply Current PORT P=2 Z=50 Ohm Measured parameters were taken at 25 C. Application Circuit: 2140 MHz 15 10 SUBCKT CAP ID=U1 ID=C12 NET="AH114" C=1.5 pF C12 sho uld be placed at the silk sc reen marker "F" on the WJ evaluation board. The capacitor sho uld b e placed 33 @ 2.14GHz from pin 1 of the AH114. CAP ID=C13 C=0.8 pF C13 should be placed at the silk screen marker "6" on the WJ evaluation board. The capacitor should be placed 39 @ 2.14GHz from pin 3 of the AH114. W-CDMA ACLR vs. Channel Power -35 -40 3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset freq = 2140 MHz ACLR (dBc) 5 Magnitude (dB) 0 -5 -10 -15 -20 -25 1.9 2 2.1 Frequency (GHz) 2.2 2.3 DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) * -45 -50 -55 -60 12 13 14 15 16 Output Channel Power (dBm) 70 MHz Reference Design Typical RF Performance Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Vcc = +5 V CAP ID=C3 C=10000000 pF CAP ID=C2 C=1000 pF CAP ID=C1 C=10 pF 70 MHz 23.4 dB -15 dB -14 dB +44.5 dBm +23.8 dBm 6.5 dB +5 V 150 mA PORT P=1 Z=50 Ohm CAP ID=C4 C=1000 pF IND ID=L3 L=56 nH RES ID=R2 R=0 Ohm RES ID=L2 R=2700 Ohm RES ID=R4 R=3.9 Ohm IN D ID=L5 L=33 nH IN D ID=L1 L=470 nH Output P1dB Noise Figure Supply Voltage Supply Current PORT P=2 Z=50 Ohm CAP ID=C5 C=1000 pF CAP ID=C9 C=68 pF SUBCKT ID=U1 NET="AH114" Measured parameters were taken at 25 C. Measured Gain 26 Measured Return Loss 0 DB(|S[1,1]|) -5 DB(|S[2,2]|) DB(|S[2,1]|) 24 Gain (dB) Return Loss (dB) 40 50 60 70 Frequency (MHz) 80 90 100 -10 -15 22 -20 20 -25 40 50 60 70 Frequency (MHz) 80 90 100 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com December 2003 AH114 Typical RF Performance Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier 110 MHz Reference Design Vcc = +5 V CAP ID= C3 C=1e7 pF CAP ID= C2 C=1000 pF CAP ID=C1 C=10 pF 110 MHz 21.9 dB -16 dB -12 dB +44 dBm +23.8 dBm 6.6 dB +5 V 150 mA PORT P=1 Z=50 Ohm CAP ID=C4 C=100 0 pF IND ID=L3 L=33 nH RES ID=R2 R=0 Ohm RES ID= L2 R=2700 Ohm RES ID=R4 R=3.9 Ohm IND ID=L5 L=18 nH IND ID=L1 L=470 nH Output P1dB Noise Figure Supply Voltage Supply Current PORT P=2 Z= 50 Ohm CAP ID= C5 C=1000 pF CAP ID=C9 C=47 pF SUBCKT ID=U1 NET="AH114" Measured parameters were taken at 25 C. Measured Gain 24 0 Measured Return Loss DB(|S[1,1]|) -5 DB(|S[2,2]|) DB(|S[2,1]|) 22 Gain (dB) Return Loss (dB) 80 90 100 110 120 Frequency (MHz) 130 140 -10 -15 20 -20 18 -25 80 90 100 110 120 Frequency (MHz) 130 140 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com December 2003 AH114 The Communications Edge TM Product Information 1/4 Watt, High Linearity InGaP HBT Amplifier Outline Drawing Product Marking The component will be marked with an "AH114" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specification for this part is located on the website in the "Application Notes" section. ESD / MSL Information Land Pattern ESD Rating: Class 1A Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020A Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance1 Junction Temperature2 MTTF vs. GND Tab Temperature 1000.0 -40 to +85 C 149 C / W 197 C Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF (million hrs) Rating 100.0 10.0 1.0 60 70 80 90 100 110 Tab Temperature (C) 120 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com December 2003 |
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