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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Durchlastrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current Stostrom Grenzwert surge forward current Grenzlastintegral I t - value 2 VRRM I FRMSM TC = 80C tP = 10 ms, Tvj = tP = 10 ms, Tvj = 25C 25C Id I FSM It 2 1600 40 35 315 260 500 340 V A A A A As As 2 2 tP = 10 ms, Tvj = 150C tP = 10 ms, Tvj = 150C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2t - value Tc = 80 C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125C IF I FRM I 2t 35 70 310 A A A2s Tc = 80 C TC = 25 C tP = 1 ms, TC = 25C TC = 80 C VCES I C,nom. IC I CRM Ptot VGES 1200 35 45 70 230 +/- 20V V A A A W V Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Andreas Schulz approved by: Robert Severin Tc = 80 C tP = 1 ms IF I FRM 10 20 A A TC = 80 C TC = 25 C tP = 1 ms, TC = 80C TC = 25C VCES I C,nom. IC I CRM Ptot VGES 1200 17,5 35 35 180 +/- 20V V A A A W V date of publication:29.03.2001 revision: 5 1(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Tvj = 150C, Tvj = 150C Tvj = 150C Tvj = 150C, TC = 25C VR = 1600 V IF = 35 A VF V(TO) rT IR RAA'+CC' min. - typ. 1,15 2 5 max. 1,2 0,8 10,5 V V m mA m Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, Tvj = 25C, min. IC = IC = IC = 35 A 35 A 1 mA VGE(TO) Cies 1200 V 1200 V I GES 600 V 22 Ohm 22 Ohm 600 V 22 Ohm 22 Ohm 600 V 22 Ohm 22 Ohm 600 V 22 Ohm 22 Ohm 600 V 22 Ohm 75 nH 600 V 22 Ohm 75 nH 22 Ohm 720 V 2800 A/s I SC Eoff Eon tf td,off tr td,on I CES VCE sat 4,5 - typ. 2,4 2,9 5,5 1,5 1,5 2,0 - max. 2,85 6,5 500 300 V V V nF A mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, VGE = 0V, Tvj = 25C, VCE = Tvj =125C, VCE = VCE = 0V, VGE =20V, Tvj =25C I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = VGE = 15V, Tvj = 25C, RG = VGE = 15V, Tvj = 125C, RG = I C = INenn, VCC = LS = I C = INenn, VCC = LS = tP 10s, VGE 15V, Tvj125C, RG = VCC = dI/dt = VGE = 15V, Tvj = 125C, RG = VGE = 15V, Tvj = 125C, RG = 50 50 55 55 290 320 50 70 4,5 - ns ns ns ns ns ns ns ns mWs 4,3 - mWs 160 - A 2(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy TC = 25C LCE RCC'+EE' - typ. 7 max. 100 nH m min. VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, I F=INenn, IF = IF = 35 A 35 A 1400A/s 600 V 600 V 1400A/s 600 V 600 V 1400A/s 600 V 600 V ERQ Qr I RM VF - typ. 1,95 1,8 40 45 3,5 7,5 1,3 2,5 max. 2,45 V V A A As As mWs mWs - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = I F=INenn, - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = I F=INenn, - diF/dt = VGE = -10V, Tvj = 25C, VR = VGE = -10V, Tvj = 125C, VR = Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VCE = VGE, Tvj = 25C, min. IC = IC = IC = 17,5 A 17,5 A 0,6mA VGE(TO) Cies 1200 V 1200 V I GES I CES VCE sat 4,5 - typ. 2,3 2,7 5,5 1,0 1,0 1,2 - max. 2,75 6,5 500 300 V V V nF A mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25C, VCE = VGE = 0V, Tvj = 125C, VCE = VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. IF = IF = 17,5 A 17,5 A VF - typ. 2,7 2,6 max. 3,05 V V min. TC = 25C TC = 100C, R100 = 493 TC = 25C R2 = R1 exp [B(1/T2 - 1/T1)] R25 R/R P25 B25/50 -5 typ. 5 max. 5 20 k % mW K 3375 3(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Tvj Top Tstg Paste=1W/m*K grease=1W/m*K typ. 0,08 0,04 0,08 - max. 1 0,55 0,8 0,7 2,3 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W C C C RthJC - RthCK -40 -40 Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Gewicht weight M Al2O3 225 3 10% G 180 g Nm 4(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 70 60 Tj = 25C 50 Tj = 125C 40 IC [A] 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 70 VGE = 17V VGE = 15V VGE = 13V 50 VGE = 11V VGE = 9V 40 IC = f (VCE) Tvj = 125C 60 IC [A] 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] 5(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 IC = f (VGE) VCE = 20 V Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 70 60 50 Tj = 25C Tj = 125C 40 IC [A] 30 20 10 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 70 IF = f (VF) 60 50 Tj = 25C Tj = 125C 40 IF [A] 30 20 10 0 0 0,5 1 1,5 2 2,5 3 VF [V] 6(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Eon = f (IC), Eoff = f (IC), Erec = f (IC) Tj = 125C, VGE = 15 V, VCC = 600 V 22 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 14 RGon = RGoff = 12 Eon Eoff Erec 10 E [mWs] 8 6 4 2 0 0 10 20 30 40 50 60 70 80 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 7 Eon 6 Eoff Erec 5 Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, VGE = +-15 V , Ic = Inenn , VCC = 600 V E [mWs] 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 RG [ ] 7(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 ZthJC = f (t) Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter 1 Zth-IGBT Zth-FWD ZthJC [K/W] 0,1 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) Reverse bias save operating area Inverter (RBSOA) 80 70 60 50 IC,Modul IC,Chip IC = f (VCE) Tvj = 125C, VGE = 15V, RG = 22 Ohm IC [A] 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) 35 30 Tj = 25C 25 Tj = 125C 20 IC [A] 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 35 30 25 Tj = 25C Tj = 125C 20 IF [A] 15 10 5 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VF [V] 9(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 IF = f (VF) Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 70 60 50 Tj = 25C 40 Tj = 150C IF [A] 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[ ] 1000 100 0 20 40 60 80 100 120 140 160 TC [C] 10(11) DB-PIM-10 (2).xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Schaltplan/ Circuit diagram 21 22 20 1 2 3 14 23 24 7 13 19 18 4 12 17 16 5 11 10 15 6 NTC 8 9 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) DB-PIM-10 (2).xls |
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