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| SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB MAXIMUM RATING (Tc=25 ) RATING KHB9D5N20F A F C CHARACTERISTIC SYMBOL KHB9D5N20F UNIT KHB9D5N20P KHB9D5N20F2 E O DIM B MILLIMETERS Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt www..com (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 87 0.7 9.5 38 200 30 9.5* V V A 38* K L M J R 180 8.7 5.5 40 0.32 150 mJ mJ V/ns W W/ D N N H 1 2 3 Q A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 0.2 12.57 + _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) KHB9D5N20F2 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient -55 150 S A F C P RthJA 62.5 62.5 /W K L L R G B RthJC 1.44 3.13 /W E DIM MILLIMETERS * : Drain current limited by maximum junction temperature. PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q J 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2008. 12. 19 Revision No : 2 1/7 KHB9D5N20P/F/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=200V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=4.75A VDS=40V, ID=4.75A (Note4) 200 2.0 0.19 345 6.7 4.0 1 100 400 V V/ V A nA m S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current www..com Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=25V, VGS=0V, f=1.0MHz VDD=100V, RG=25 ID=9.5A (Note4, 5) VDS=160V, ID=9.5A VGS=10V (Note4, 5) - 18.5 2.7 9 11 62 46 80 387 96 34 23 32 135 ns 102 170 503 125 45 pF nC IS ISP VSD trr Qrr VGS 130 0.6 9.5 A 38 1.5 V ns C Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =3mH, IAS=9.5A, VDD=50V, RG=25 , Starting Tj=25 Note 3) IS 9.5A, dI/dt 300A/ , VDD 300 Note 4) Pulse Test : Pulse width , Duty Cycle 2%. . BVDSS, Starting Tj=25 . Note 5) Essentially independent of operating temperature. 2008. 12. 19 Revision No : 2 2/7 KHB9D5N20P/F/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 1 10 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Fig2. ID - VGS VDS = 40V 250s Pulse Test Drain Current ID (A) Drain Current ID (A) 10 1 10 0 10 0 150 C 25 C -55 C 10 -1 -1 0 1 10 10 10 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig4. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 Fig5. RDS(ON) - ID 2.0 On - Resistance RDS(ON) () VGS = 0V IDS = 250A 1.1 1.5 1.0 1.0 VGS = 10V 0.9 0.5 VGS = 20V 0.8 0 50 100 150 0 0 5 10 15 20 25 30 www..com -50 -100 Junction Temperature Tj ( C) Drain Current ID (A) Fig6. IS - VSD 3.0 Fig6. RDS(ON) - Tj VGS = 10V IDS = 5A Reverse Drain Current IS (A) 10 1 Normalized On Resistance 0.8 1.0 1.2 1.4 1.6 1.8 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2008. 12. 19 Revision No : 2 3/7 KHB9D5N20P/F/F2 Fig7. C - VDS 2500 2000 Frequency =1MHz Fig8. Qg- VGS 12 I = 9.5A D Gate - Source Voltage VGS (V) 10 8 6 4 2 0 0 5 Capacitance (pF) Ciss VDS = 50V VDS = 125V VDS = 200V 1500 1000 500 0 Coss Crss 10-1 100 101 10 15 20 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area (KHB9D5N20P) 102 Operation in this area is limited by RDS(ON) Fig10. Safe Operation Area (KHB9D5N20F, KHB9D5N20F2) 102 Operation in this area is limited by RDS(ON) Drain Current ID (A) Drain Current ID (A) 101 100s 101 100 s 1 ms 1ms 100 TC= 25 C Tj = 150 C Single nonrepetitive pulse 0 10ms 100ms DC 100 TC= 25 C Tj = 150 C -1 Single nonrepetitive pulse 10 ms 100 ms DC 10-1 www..com 10 10 1 10 2 10 100 101 10 2 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 12 10 Drain Current ID (A) 8 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2008. 12. 19 Revision No : 2 4/7 KHB9D5N20P/F/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance (KHB9D5N20P) Duty=0.5 100 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.01 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 - Duty Factor, D= t1/t2 - Rthjc=1.44 100 101 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance (KHB9D5N20F, KHB9D5N20F2) 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 www..com 10-2 10-5 10-4 10-3 10-2 10-1 - Duty Factor, D= t1/t2 - Rthjc=3.13 100 101 TIME (sec) 2008. 12. 19 Revision No : 2 5/7 KHB9D5N20P/F/F2 Fig14. Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID VDS VGS Qgs Qgd Qg Q Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS ID(t) VDD www..com VDS(t) 10 V VGS tp Time 2008. 12. 19 Revision No : 2 6/7 KHB9D5N20P/F/F2 Fig16. Resistive Load Switching VDS RL 0.5 VDSS 25 90% VDS VGS 10% td(on) tr tf td(off) toff ton 10V VGS Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) IRM di/dt 0.8 x VDSS driver IS VDS (DUT) Body Diode Reverse Current Body Diode Recovery dv/dt VSD 10V www..com VGS Body Diode Forword Voltage drop VDD 2008. 12. 19 Revision No : 2 7/7 |
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