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ECG040B InGaP HBT Gain Block Product Features * DC - 4 GHz * +18.5 dBm P1dB at 1 GHz * +35 dBm OIP3 at 1 GHz * 16 dB Gain at 1 GHz * 5.5 dB Noise Figure * Available in Lead-free / green SOT-89 Package Style * Internally matched to 50 Product Description The ECG040B is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1 GHz, the ECG040B typically provides 15.8 dB of gain, +35 dBm Output IP3, and +18.5 dBm P1dB. The ECG040B consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in a lowcost, surface-mountable lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG040B will work for other various applications within the DC to 4 GHz frequency range such as CATV and mobile wireless. Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUT Applications * * * * * Mobile Infrastructure CATV / FTTX W-LAN / ISM RFID WiMAX / WiBro Function Input Output/Bias Ground Pin No. 1 3 2, 4 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Output P1dB Output IP3 (2) Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Device Voltage Device Current Typical Performance (1) Units MHz MHz dB dBm dBm MHz dB dB dB dBm dBm dB V mA Min DC Typ 1000 15.8 +18.5 +35 2000 15.3 22 16 +18 +35 5.5 4.8 70 Max 4000 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 (2) Noise Figure Units MHz dB dB dB dBm dBm dB 500 16.0 -24 -27 +18.5 +35.5 4.6 Typical 900 15.8 -24 -23 +18.5 +35 5.5 1900 15.3 -23 -16 +18 +34.5 5.8 2140 15.1 -21 -16 +19 +30.5 3.8 12.8 17.5 1. Test conditions unless otherwise noted: 25 C, Supply Voltage = +6 V, Rbias = 16 , 50 System. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Storage Temperature RF Input Power (continuous) Device Current Junction Temperature Thermal Resistance, Rth -65 to +150 C +12 dBm 130 mA +160 C 128 C/W Rating Ordering Information Part No. ECG040B-G ECG040B-PCB Description InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 package) 700 -2400 MHz Fully Assembled Eval. Board Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage. TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www. TriQuint.com Page 1 of 4 February 2009 ECG040B InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, Rbias = 16 , Icc = 70 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 16.2 -23 -32 +18.4 +35.6 4.6 500 16.0 -24 -27 +18.5 +35.5 4.7 900 15.8 -24 -23 +18 +35 4.9 1900 15.3 -23 -16 +18 +33.2 5.1 2140 15.1 -21 -16 +18 +32.9 5.3 2400 14.8 -20 -15 +18 +32.4 5.4 3500 13.9 -17 -11 +17.5 1. Test conditions: T = 25 C, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 16 , Icc = 70 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain 18 16 14 12 10 8 Return Loss Icc vs. Vcc 200 180 160 140 120 100 80 60 40 20 0 0 0 -10 -20 -30 S11 S22 Icc (mA) S 1 1 , S 2 2 (d B ) G a in (d B ) 25C -40 0 1 2 3 4 5 6 0 1 2 3 4 5 6 1 2 Frequency (GHz) OIP3 vs. Frequency 40 35 NF (dB) 30 25 25C 20 500 1000 85C -40C 2500 3000 6 5 4 3 2 500 Frequency (GHz) Noise Figure vs. Frequency 24 22 3 Vcc (V) 4 5 6 P1dB vs. Frequency OIP3 (dBm) P1dB (dBm) 20 18 16 14 25C 85C 2000 -40C 2500 3000 1500 2000 Frequency (MHz) 1000 1500 2000 12 500 1000 1500 Frequency (MHz) Frequency (MHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www. TriQuint.com Page 2 of 4 February 2009 ECG040B InGaP HBT Gain Block Recommended Application Circuit Vcc Icc = 70 mA R4 Bias Resistor C4 Bypass Capacitor C3 0.018 F L1 RF Choke RF IN C2 Blocking Capacitor RF OUT C1 Blocking Capacitor Reference Designator L1 C1, C2, C4 50 820 nH .018 F Recommended Component Values Frequency (MHz) 500 900 1900 2200 220 nH 68 nH 27 nH 22 nH 1000 pF 100 pF 68 pF 68 pF 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R4 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 F chip capacitor Do Not Place 16 1% tolerance Size 0603 0603 0603 0805 Recommended Bias Resistor Values Supply R1 value Size Voltage 6V 17.1 ohms 0805 7V 31.4 ohms 1210 8V 46 ohms 1210 9V 60 ohms 2010 10 V 74 ohms 2010 12 V 103 ohms 2512 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. Typical Device S-Parameters S-Parameters (Vdevice = +4.8 V, ICC = 70 mA, T = 25 C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 -23.31 -23.69 -23.45 -22.70 -22.13 -19.60 -19.24 -16.99 -15.40 -13.81 -11.78 -11.08 -9.31 -179.51 170.90 162.60 156.61 148.64 139.22 121.52 115.00 97.66 84.99 64.76 52.37 35.87 16.19 16.04 15.79 15.50 15.16 14.76 14.31 13.86 13.33 12.88 12.19 11.70 10.98 177.81 158.74 138.37 118.53 99.02 79.46 61.06 41.97 23.55 4.82 -13.55 -30.90 -50.95 -19.40 -19.30 -19.12 -19.03 -18.71 -18.36 -18.13 -17.78 -17.23 -16.82 -16.84 -16.58 -16.15 -0.03 -5.83 -12.26 -19.16 -26.80 -32.98 -41.04 -51.05 -58.84 -68.93 -79.74 -89.82 -102.41 -36.95 -27.31 -21.40 -18.24 -16.09 -14.17 -12.61 -11.16 -10.31 -9.04 -7.54 -7.37 -6.42 -170.80 -130.75 -141.51 -153.77 -175.02 167.68 152.88 130.54 115.55 97.41 76.41 64.41 46.46 Device S-parameters are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www. TriQuint.com Page 3 of 4 February 2009 ECG040B InGaP HBT Gain Block ECG040B-G Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an "E040G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "E040" designator followed by an alphanumeric lot code; it may also have been marked with a "J" designator followed by a 3-digit numeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www. TriQuint.com Page 4 of 4 February 2009 |
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