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| JMnic Product Specification Silicon NPN Power Transistors 2SC3460 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 800V/6A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 6 20 3 100 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE= IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.4A ; VCE=10V 10 8 120 15 MIN 800 1100 7 2SC3460 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V V V 2.0 1.5 10 10 40 |I |I V V A A pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=4A;RL=100| IB1=0.8A; IB2=-1.6A VCC=400V 0.5 3.0 0.3 |I |I |I s s s hFE-1 Classifications K 10-20 L 15-30 M 20-40 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3460 Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC3460 4 |
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