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| 3mm Silicon PNP Photo Transistor 1.57 [.062] 4.32 [.170] 3.00 [.118] DIA. 5.08 [.200] 3.67 [.149] DIA. CATHODE 6.41 [.253] 3.68 [.145] TYP Dialight 551-7610 Features 6.35 [.250] 7.11 .280 * Silicon PNP type transistor * Narrow acceptance angle * Daylight filtered * Good linearity * High reliability ABSOLUTE MAXIMUM RATINGS (TA=25C) Operating and Storage Temperature Range (C) Soldering Temperature (2mm from case bottom) Dip Soldering Time (TS) t5 s Iron Soldering Time (TS) t3 s Collector Emitter Voltage (VCEO) Collector Current (IC) Collector Peak Current (IPK) t<10s Power Dissipation (PTOT) TA=25C Thermal Resistence (RTHJA) 260C 300C 35V 15 mA 75 mA 165 mW 450kW -55/+100 2.54 [.100] .50 [.020] TYP 10.86 [.428] 13.30 [.525] MAX O 1.10 [.043] TYP. 2.54 [.100] RECOMMENDED PC BOARD HOLE PATTERN Dimensions in mm [inches] 4 OPERATING CHARACTERISTICS (TA=25C) Parameter Maximum Sensitivity Wavelength Spectral Range, Photosensitivity Radiant Sensitive Area Distance, Chip Surface and Lens Full Angle Capacitance (VCE=0 V, f=1 MHz, E=0 lux) Leakage Current (VCE=25 V, E=0 lx) Photocurrent, CollectorEmitter(1) (Ee=0.5 mW/cm2, VCE=5 V, =950 nm) Rise/Fall Time (IC=1 mA, VCC=5 V, RL=1k) Collector Emitter Saturation Voltage (IC=IPCEmin (1) * 0.3, =950 nm Ee=0.5 mW/cm2) Notes: (1) IPCEmin = minimum photocurrent Solder Adherance per MIL-STD-202E, Method 208C Symbol Smax A H 2 1/ 2 Value 900 730 min, 1120 max .045 typ 2.4 typ, 2.8 max 24 5 1 typ, 200 max Unit nm nm mm2 mm Deg. pF nA CCE Ice0 IPCE tR,tF .63 min, 1.5 typ 6.5 typ mA s VCEsat 200 mV Dialight Corporation * 1913 Atlantic Avenue * Manasquan, NJ 08736 * TEL: (732) 223-9400 * FAX: (732) 223-8788 * www.dialight.com 4-11 |
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