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PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description
The ECM001 is a dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC's own InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It is optimized for cellular CDMA (digital) and AMPS (analog) in the 824 MHz to 849 MHz band. It operates from a positive voltage (3 - 4V Vcc) and includes a power-down feature. The input and output are both matched to 50. It is housed in a 6 X 6 mm Land Grid Array package.
Features
Dual Mode CDMA/AMPS Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery Power-down activated when Vref pin <1V 28.0 dBm CDMA Power 31.5 dBm AMPS Power 35% CDMA Efficiency Power-down Capability 80mA Typical Quiescent Current High Reliability InGaP Design
Applications
3.5 V CDMA/AMPS Cellular Handsets
Functional Block Diagram
CAUTION!
SENSITIVE ELECTRONIC DEVICE
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
1
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
ELECTRICAL SPECIFICATIONS
The following tables list the electrical characteristics of the ECM001 Power Amplifier Module. Table 1 lists the electrical performance of the ECM001 for nominal operating conditions for the cellular CDMA (digital) and AMPS (analog) in the 824MHz to 849MHz band. Table 2 lists the absolute maximum ratings for continuous operation.
Table 1 - Electrical Specifications
Test Conditions: Ta = 25 C, VCC = +3.5 V, VREF / PD (reference / power-down voltage) = +3.0 V, F = 824 to 849 MHz
SYMBOL PARAMETER LIMITS MIN. TYP. MAX. UNIT TEST CONDITION
o
F G Pout ACPR Alt CPR PAE PSAT PAE G ICQ Vcc IRL NF TON/OFF NOTE 1: NOTE 2: NOTE 3: NOTE 4:
Frequency Gain (CDMA Modulation) Output Power (CDMA) Adjacent Channel Power Rejection @ 28.0 dBm Alternate Channel Power Rejection @ 28.0 dBm Power Added Efficiency (CDMA) @ 28.0 dBm Output Power (AMPS) Power Added Efficiency (AMPS) Gain (AMPS) Output Stability Quiescent Current (No RF) Supply Voltage Input Return Loss Noise Figure Harmonics, 2f, 3f, 4f Power Down On/Off Time Using Application Schematic. Tuned for CDMA. @ 885 KHz offset from band center. @ 1980 KHz offset from band center. No oscillation all phases ( RF power up to PSAT )
824 26 28
849 28 -50 -60 35 31.5 48 28 6:1 80 3.5 10 5 -35 <100 -45 -56
31 42 24
100
-30.0
MHz dB dBm dBc dBc % dBm % dB VSWR mA V dB dB dBc ns
NOTE 1 NOTE 2 NOTE 3
NOTE 4
Table 2 - Absolute Maximum Ratings
Exceeding any of the absolute maximum ratings may cause permanent damage to the device. No damage assuming only one parameter is set at limit at a time with other parameters set at or below nominal value.
PARAMETER Supply Voltage Reference / Power-down Voltage(Vcc=VREF / PD ) RF Power Input Ambient Operating Temperature Storage Temperature RATING 7 4 +15 -40 to +110 -65 to +140 UNIT Volts Volts dBm C C TEST CONDITION VREF / PD = 3.0V V CC = 3.5V VCC , VREF
/ PD
= 3.0V
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
2
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
PACKAGE DIMENSIONS AND MARKINGS
The ECM001 is a multi-layer laminate base, overmold encapsulated modular package designed for surface-mounted solder attachment to a printed circuit board.
Package Dimensions
X X1 X1
min X .228 .091 .043 .090 .228 .091 .071 .139 X1 X2
Y1
inches nom .232 .095 .047 .094 .232 .095 .075 .143
max .236 .099 .051 .098 .236 .099 .079 .147
min 5.78 2.31 1.09 2.29 5.78 2.31 1.81 3.53
millimeters nom max 5.89 2.41 1.19 2.39 5.89 2.41 1.91 3.63 5.99 2.51 1.29 2.49 5.99 2.51 2.01 3.73
1
6
Y2 Y3 2
X3 Y Y1 Y2 Y3
7 5 Y Y1 3 X2 X3 BOTTOM SIDE PAD .036" X .030" (.91mm X .76mm) BOTTOM SIDE GROUND PAD 4
Metric values are converted from English values. Metric values are rounded off.
1 2 3 4 5 6 7
PINOUT Vcc1 RFin VPD Vcc2 RFout GND GND
Device Marking
.062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- 0.004" (5.89mm +/- 0.1mm)
.232" +/- 0.004" (5.89mm +/- 0.1mm)
PIN 1 INDICATOR
EiC xxxx ECM001 XXXX XXXX
LOT NUMBER
TOP VIEW WITH MARKING DIAGRAM
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
3
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
Figure 1 Pout vs. Gain vs. Temperature Using CDMA Signal (3.5v)
35
Gain(dB)
30
836MHz@-40C 836MHz@+25C 836MHz@+85C
25
20 0 4 8 12 16 20 24 28 32
Pout(dBm) Figure 2
AMPS Gain vs. Frequency vs. Temperature (31.5 dBm 3.5v)
31 30 AMPS,31.5dBm,-40C 29 28 27 26 25 820 825 830 835 840 845 850 855
Gain(dB)
AMPS,31.5dBm,+25C AMPS,31.5dBm,+85C
f(MHz)
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
4
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Figure 3 AMPS PAE vs. Frequency vs. Temperature (31.5 dBm 3.5v)
50 49 48
PAE(%)
47 46 45 44 43 820
AMPS -40C AMPS +25C AMPS +85C
825
830
835
840
845
850
855
f(MHz) Figure 4 PAE vs. Pout vs. Temperature Using CDMA Signal (3.5v)
45
30
PAE(%)
836MHz@-40C 836MHz@+25C 836MHz@+85C 15
0 0 4 8 12 16 20 24 28 32
Pout(dBm) EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com SS-000340-000 Revision G
5
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
Figure 5
ACPR1 vs. Frequency @ 28dBm vs. Temperature vs. Vcc
60
ACPR1(-dBc)
50 3.5V,-40C 3.5V,+25C 3.5V,+85C 40
30 820
825
830
835
840
845
850
855
f(MHz)
Figure 6
ACPR2 vs. Frequency @ 28dBm vs. Temperature
61 60.5
ACPR2(-dBc)
60 59.5 59 58.5 58 57.5 820 825 830 835 840 845 850 855 3.5V,-40C 3.5V,+25C 3.5V,+85C
f(MHz)
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
6
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE Figure 7 ACPR1 vs. Pout vs. Temperature Using CDMA Signal (3.5v)
30 35 40 45 50 55 60 65 70 75
0 4 8 12 16 20 24 28 32
ACPR1(-dBc)
836MHz@-40C 836MHz@+25C 836MHz@+85C
Pout(dBm) Figure 8
ACPR2 vs. Pout vs. Temperature Using CDMA Signal (3.5v)
40 45
ACPR2(-dBc)
50 55 60 65 70 75 80 0 4 8 12 16 20 24 28 32 836MHz@-40C 836MHz@+25C 836MHz@+85C
Pout(dBm)
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
7
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
Figure 9 Gain vs. Frequency vs. Vcc vs. Temperature @ 28dBm
31 30.5 30
Gain(dB)
29.5 29 28.5 28 27.5 820
3.5V,-40C 3.5V,+25C 3.5V,+85C
825
830
835
840
845
850
855
f(MHz)
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
8
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
PCB LAYOUT 1. The front side of the pcb ground area under the PAM requires the use of multiple vias to provide low thermal resistance to the backside of the pcb ground. EVAL BOARD
SCHEMATIC
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
9
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
PIN 1 2 3 4 5 6 7 Notes:
FUNCTION Vcc1 RF In Vref / Vpd Vcc2 RF Out GND GND
DESCRIPTION PIN 1 connects to the driver stage HBT collector. RF input port connects to internally matched 50 ohm circuit. Ref. Voltage for the bias circuit. No significant amplifier current is drawn until Vref reaches approximately 2.5V. Vcc2 connects to the power amplifier stage HBT collector. RF out is internally matched to 50 ohms and expects a 50 ohm load impedance. Ground Ground. This ground also serves as heat sink and must connect well to the PCB RF ground and heat sink. All supply pins may be connected together at the supply.
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
10
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
ECM001 Operating Principles and Key Features ECM001 is a 6x6mm size Power Amplifier Module (PAM) for cellular band CDMA (digital) and AMPS (analog) handset market.. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs proprietary InGaP HBT provides excellent reliability and is used in the infrastructure industry. The InGaP HBT is inherently superior to AlGaAs HBT. The surface defect density in InGaP is much lower than that of AlGaAs. The HBT life test of EiC InGaP HBT has gone through 315oC junction temperature and 50kA/cm2 for over 6000 hours (8 1/2 months), translating to multi-million hours lifetime or longer in the operation envelope [1]. This kind of robust performance is far superior to conventional AlGaAs HBT. The InGaP HBT PAM goes through a product burn-in test as well. A large sample group, usually 100 pieces, goes through burn-in test at an ambient temperature of 125 to 145 oC for 1000 hours. The FIT number is than calculated based upon the data collected. The MTTF is simply 1/FIT, this MTTF should agree with the HBT life test results. The agreement between the MTTF of HBT from life test and the FIT is essential: it validates both tests! If there is a large discrepancy [2], the quality claim may be flawed. Although handset applications do not have as stringent operating requirements as the infrastructure market, the high reliability of InGaP HBT offers an assurance to the user of a high quality product designed for high volume production. II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature Variation Current gain of InGaP HBT varies about 10% over -40 to +85oC range, compared with 50% of AlGaAs HBT. This low gain variation over temperature, coupled with the patent-pending circuit design approach, provides for more stable electrical performance. III. ECM001 Offers High Gain and Margin for Transmitter Chain Design The typical gain of the ECM001 is 27dB. This high gain allows the driver amplifier to run very linear which results in reduced current. Taking into account the 3dB loss of the BPF in front of the PAM, the driver needs to deliver only 4dBm linear power. The P1dB of the driver amplifier should be more than 10dBm.
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
11
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
If a lower gain PAM is used, the driver needs to provide more power, at the expense of more operation current and possible degradation in ACPR. Therefore the ECM001 can replace a lower gain PAM, this allows the driver to work at a lower output power and provide better ACPR, this improved performance offers more design margin in the transmitter chain. IV. Easy Shut Down and Low Leakage Current The Vcc pin of the PAM is connected directly to the battery, therefore a shut down FET is not required. A voltage is applied to the Vref pin, which then brings up the quiescent current. Removing the voltage applied to Vref pin, the quiescent current will drop to a small leakage current, typically <10uA. The low leakage current of the PAM allows for a longer standby time for the phone. V. General Application The PAM requires a minimal number of external components. Both the input and output are dc-blocked within the PAM as shown in the function diagram. The input pin is connected to ground through a shunt inductor within the PAM. ECM001 is designed with a low quiescent current of 80mA typical. At full CDMA power of 28dBm, the operation current will be greater than 500mA. Therefore it is a "quasi class B" or "deep class AB" amplifier. The operation current increases with output power. CDMA signal has a time varying amplitude. The peak power is 4dB above the average RF power (it can be more accurately defined by PDF, power density function). As the peak power is clipped by the amplifier saturation power level, the distortion of the signal will cause the ACPR to deteriorate rapidly. Therefore the P1dB (as tested by a SINE wave) of the amplifier should be over 31dBm to provide good ACPR at 28 dBm of output power. A 100pF capacitor is required adjacent to the Vcc2 pin. In addition, a large capacitor (>uF) is required. The CDMA signal has a time-varying amplitude; therefore the PAM draws on operation current corresponding to the instantaneous demand by the RF power. The large capacitor near-by is the electric charge reservoir, providing current on demand. The long electrical path from battery behaves as a large inductor; the instantaneous demand on current will cause a voltage drop, resulting in poor ACPR. On the evaluation board, a large shunt capacitor is added to protect the Vref pin from power supply over-voltage during ON/OFF. This is similar but different from the ESD. Therefore the rise and fall time test of the power down feature needs to be tested with the shunt capacitor on Vref pin removed.
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
12
PRELIMINARY DATA SHEET
ECM001
Dual Mode Cellular CDMA/AMPS 3.5V POWER AMPLIFIER MODULE
Conclusion ECM001 offers high gain, low quiescent current, and a small footprint. The InGaP technology provides excellent reliability and quality, assuring the phone set manufacturer a high quality product designed for high volume production. Reference 1. "InGaP HBTs offer Enhanced Reliability", Barry Lin, Applied Microwave and Wireless. pp 115-116, Dec. 2000 2." Interaction of Degradation Mechanisms in Be-Doped GaAs HBTs", Darrell Hill and John Parsey, Digest GaAs IC Symposium, Oct., 2000. pp 241-244
APPLICATION NOTES
Please visit our website at www.eiccorp.com to view or download the following documents. You may also call our Customer Service to request a hardcopy. Document # AP-000513-000 AP-000516-000 Description Tape and Reel Specifications: PAMS Application Note Index
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com
SS-000340-000 Revision G
13

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